Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

Abstract: Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

Abstract: An improved apparatus and method for facilitating inspection of a wafer are disclosed. An improved method for facilitating inspection of a wafer comprises identifying a plurality of repeating patterns from reference image data associated with a layout design of the wafer. The method also comprises determining a pattern feature of one of the identified plurality of repeating patterns based on a change of a first characteristic of the reference image data. The method further comprises causing a first area of the wafer corresponding to the determined pattern feature to be evaluated.

Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

Abstract: A charged-particle tool including: a condenser lens array configured to separate a beam of charged particles into a first plurality of sub-beams along a respective beam path and to focus each of the sub-beams to a respective intermediate focus; an array of objective lenses, each objective lens configured to project one of the plurality of sub-beams onto a sample; a corrector including an array of elongate electrodes, the elongate electrodes extending substantially perpendicular to the beam paths of the first plurality of sub-beams and arranged such that a second plurality of the sub-beams propagate between a pair of the elongate electrodes, the second plurality of sub-beams being a subset of the first plurality of sub-beams; and an electric power supply configured to apply a potential difference between the pair of elongate electrodes so as to deflect the second plurality of sub-beams by a desired amount.

Abstract: Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

Abstract: Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

Abstract: A positioning device, including: a first positioning module arranged to support and position a first substrate, a second positioning module arranged to support and position a second substrate, a first positioning field in which the first and second positioning modules can be alternatingly positioned to carry out a first processing sequence, a second positioning field in which the first and second positioning modules can be alternatingly positioned to carry out a second processing sequence, wherein when one of the first and second positioning modules is carrying out or finishing the first processing sequence, the other of the first and second positioning modules has finished the second processing sequence and is positioned closer to the one of the first and second positioning modules.

Abstract: A suction clamp for clamping an object. The suction clamp includes a base structure including a base and a connection area, and a first pad for receiving the object. The suction clamp further includes a resilient member connecting the first pad to the connection area of the base structure such that the first pad is moveable relative to the base between a receiving position for receiving the object and a clamping position for clamping the object, wherein the resilient member is adapted to bias the first pad to the receiving position. The suction clamp further includes a suction opening arranged in the base and adapted to be connected to a suction device for providing a suction force for clamping the object on the first pad.

Abstract: An improved apparatus and method for extracting pattern contour information from an inspection image in a multiple charged-particle beam inspection system are disclosed. An improved method for extracting pattern contour information from an inspection image comprises identifying, from an inspection image obtained from a charged-particle beam inspection system, a first pattern and a second pattern that partially overlap in the inspection image. The method also comprises generating a first separation image by removing an image area corresponding to the second pattern from the inspection image. The first separation image includes the first pattern of which a first part is removed when removing the image area corresponding to the second pattern. The method also comprises updating the first separation image to include image data representing the removed first part of the first pattern based on a first reference image corresponding to the first pattern.

Abstract: An improved electron beam manipulator for manipulating an electron beam in an electron projection system and a method for manufacturing thereof are disclosed. The electron beam manipulator comprises a body having a first surface and a second surface opposing to the first surface and an interconnecting surface extending between the first surface and the second surface and forming an aperture through the body. The body comprises an electrode forming at least part of the interconnecting surface between the first surface and the second surface.

Abstract: A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Abstract: A method for calibrating a process model of a patterning process. The method includes identifying a portion of the substrate that has values within a tolerance band of one or more parameters (e.g., CD, EPE, etc.) of the patterning process, obtaining, via a metrology tool, metrology data corresponding to the portion of the substrate, processing the metrology data, and calibrating a process model based on the processed metrology data.

Abstract: A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.