Abstract: A method for preparing a substrate for an exposure process of a lithographic manufacturing method, the method including imposing different local temperatures across the substrate so as to induce different thermal expansion across the substrate before the exposure process. This method is for compensating for deformation of the substrate induced when the substrate is positioned on a substrate table of a lithographic apparatus. There is also provided a local temperature applicator to implement this technique and to a lithographic apparatus including such a local temperature applicator.

Abstract: Methods and apparatus for determining a parameter of a structure fabricated in or on a substrate and compensated for a drift error. The methods comprising: illuminating, at a plurality of times, at least part of the structure with electromagnetic radiation, the at least part of the structure being at a first orientation; sensing, at the plurality of times, a plurality of average reflectances of the at least part of the structure; and determining, based on the plurality of average reflectances, an estimation of the parameter at one or more further times.

Abstract: An improved leveling sensor and method for adjusting a sample height in a charged-particle beam inspection system are disclosed. An improved leveling sensor comprises a light source configured to project a first pattern onto a sample and a detector configured to capture an image of a projected pattern after the first pattern is projected on the sample. The first pattern can comprise an irregularity to enable a determination of a vertical displacement of the sample.

Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.

Abstract: Charged particle assessment tools and inspection methods are disclosed. In one arrangement, a condenser lens array divides a beam of charged particles into a plurality of sub-beams. Each sub-beam is focused to a respective intermediate focus. Objective lenses downstream from the intermediate foci project sub-beams from the condenser lens array onto a sample. A path of each sub-beam is substantially a straight line from each condenser lens to a corresponding objective lens.

Abstract: An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved alignment mechanism is disclosed. An improved charged particle beam inspection apparatus may include a second electron detection device to generate one or more images of one or more beam spots of the plurality of secondary electron beams during the alignment mode. The beam spot image may be used to determine the alignment characteristics of one or more of the plurality of secondary electron beams and adjust a configuration of a secondary electron projection system.

Abstract: Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.

Abstract: Apparatuses, systems, and methods for beam array geometry optimization of a multi-beam inspection tool are disclosed. In some embodiments, a microelectromechanical system (MEMS) may include a first row of apertures; a second row of apertures positioned below the first row of apertures; a third row of apertures positioned below the second row of apertures; and a fourth row of apertures positioned below the third row of apertures; wherein the first, second, third, and fourth rows are parallel to each other in a first direction; the first and third rows are offset from the second and fourth rows in a second direction that is perpendicular to the first direction; the first and third rows have a first length; the second and fourth rows have a second length; and the first length is longer than the second length in the second direction.

Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m?1 K?1.

Abstract: An assembly including a non-linear element configured for generating broadband radiation from input radiation coupled into the non-linear element. The assembly further includes an optical element positioned downstream of the non-linear element configured to reflect a fraction of the broadband radiation back into the non-linear element. The non-linear element can be a nonlinear fiber, such as a hollow-core photonic crystal fiber (HC-PCF).

Abstract: A difficulty of contamination interfering with a grid plate positional measurement system is addressed. In one embodiment contamination is prevented from coming into contact with the grating or the sensor. In an embodiment, surface acoustic waves are used to detach contamination from a surface of the grating or sensor.

Abstract: A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.

Abstract: Embodiments herein describe methods, devices, and systems for rupture detection and end-of-life monitoring of dynamic gas lock (DGL) membranes and pupil facet mirrors in lithographic apparatuses. A method for detecting rupture of a dynamic gas lock membrane in a lithographic apparatus includes illuminating the dynamic gas lock membrane with a measurement beam using a radiation source, in which the dynamic gas lock membrane is arranged between a wafer and projection optics of the lithography apparatus, and determining whether any radiation from the measurement beam is reflected from the dynamic gas lock membrane by using reflection collection optics, in which the reflection collection optics are arranged above the dynamic gas lock membrane. A rupture in the dynamic gas lock membrane is detected if no radiation is reflected from the dynamic gas lock membrane. If radiation is reflected from the dynamic gas lock membrane, the dynamic gas lock membrane is not ruptured.

Abstract: A method at tuning a lithographic process for a particular patterning device. The method includes: obtaining wavefront data relating to an objective lens of a lithographic apparatus, the wavefront data measured subsequent to an exposure of a pattern on a substrate using the particular patterning device; determining a pattern specific wavefront contribution from the wavefront data and a wavefront reference, the pattern specific wavefront contribution relating to the patterning device; and tuning the lithographic process for the particular patterning device using the pattern specific wavefront contribution.

Abstract: A method and associated apparatuses for controlling a process of manufacturing semiconductor devices on a substrate. The method includes obtaining process data relating to the process and determining a correction for the process based on the process data and a first control objective associated with the devices on the substrate. A first probability of the first control objective being achievable is determined and the correction adjusted based on the probability and at least a second control objective having a second probability of being achievable compared to the first control objective.

Abstract: Described herein is a method for training a machine learning model to determine a source of error contribution to multiple features of a pattern printed on a substrate. The method includes obtaining training data having multiple datasets, wherein each dataset has error contribution values representative of an error contribution from one of multiple sources to the features, and wherein each dataset is associated with an actual classification that identifies a source of the error contribution of the corresponding dataset; and training, based on the training data, a machine learning model to predict a classification of a reference dataset of the datasets such that a cost function that determines a difference between the predicted classification and the actual classification of the reference dataset is reduced.

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Abstract: A multi-beam manipulator device operates on sub-beams of a multi-beam to deflect the sub-beam paths. The device include: an electrode as pairs of parallel surfaces. Each pair of parallel surfaces includes a first surface that is arranged along a side of a corresponding line of sub-beam paths and a second surface that is arranged parallel to the first surface and along an opposite side of the corresponding line of sub-beam paths. A first pair of parallel surfaces is configured to electrostatically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying a deflection amount to the paths of sub-beams in a first direction. A second pair of parallel surfaces is configured to electro-statically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying another deflection amount to the paths of sub-beams in a second direction.

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.