Abstract: A detector may be provided with a sensing element or an array of sensing elements, each of the sensing elements may have a corresponding gain element. A substrate may be provided having a sensing element and a gain element integrated together. The gain element may include a section in which, along a direction perpendicular to an incidence direction of an electron beam, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity may be provided adjacent to the region of second conductivity. The sensing element may include a section in which, along the incidence direction, a region of fourth conductivity is provided adjacent to an intrinsic region of the substrate, and the region of second conductivity may be provided adjacent to the intrinsic region.

Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.

Abstract: A target apparatus (300) for an extreme ultraviolet (EUV) light source includes a target generator, a sensor module (130), and a target generator controller (325). The target generator includes a reservoir (115) configured to contain target material (114) that produces EUV light in a plasma state and a nozzle structure (117) in fluid communication with the reservoir. The target generator defines an opening (119) in the nozzle structure through which the target material received from the reservoir is released. The sensor module is configured to: detect an aspect relating to target material released from the opening as the target material travels along a trajectory toward a target space (112), and produce a one-dimensional signal from the detected aspect. The target generator controller is in communication with the sensor module and the target generator, and is configured to modify characteristics of the target material based on an analysis of the one-dimensional signal.

Abstract: A target material supply apparatus includes: first and second fluid flow components (1122, 1126) that define an axial flow path when joined together, in which the axial flow path is between a source of target material fluid and a nozzle supply apparatus; and a coupling apparatus configured to seal the joint between the first and second fluid flow components. The coupling apparatus includes a gasket (1105) having an annular shape defining an inner opening that is a part of the axial flow path when seated and sealed. When the gasket is seated between the first and second fluid flow components to thereby seal the joint formed by attaching the first and second fluid flow components, pressure applied to the gasket from target material fluid traversing the gasket inner opening along the axial flow path improves the hermetic function of the seal at the joint. Optionally, a functional insert like e.g. a flow restrictor (1160) can be seated in the gasket.

Abstract: An inspection apparatus includes a radiation source, an optical system, and a detector. The radiation source is configured to generate a beam of radiation. The optical system is configured to receive and direct the beam along an optical axis and toward a target so as to produce scattered radiation from the target. The optical system includes a beam displacer. The beam displacer includes two or more reflective surfaces. The beam displacer is configured to receive the beam along the optical axis, perform reflections of the beam so as to displace the optical axis of the beam, move linearly in at least a first dimension to shift the displaced optical axis, and preserve an optical property of the beam such that the optical property is invariant to the linear movement. The detector is configured to receive the scattered radiation and to generate a measurement signal based on the scattered radiation.

Abstract: A method of reducing aberration comprises separating charged particles of a beam based on energy of the charged particles to form beamlets, each of the beamlets configured to include charged particles at a central energy level; and deflecting the beamlets so that beamlets having different central energy levels are deflected differently. An aberration corrector comprises a dispersive element configured to cause constituent parts of a beam (e.g. a charged particle beam) to spread apart based on energy; an aperture array configured to form beamlets from the spread apart beam; and a deflector array configured to deflect the beamlets differently based on central energy levels of particles that form the beamlets.

Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

Abstract: A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.

Abstract: A sensor may be used to measure a degree of tilt of a sample. The sensor may include an apparatus having a light source, first, second, and third optical elements, a lens, and an aperture. The first optical element may supply light from the light source toward the sample, and may supply light input into the first optical element from the sample toward the second optical element. The second optical element may supply light toward first and second sensing elements. An aperture may be arranged on a focal plane of the lens. A light beam incident on the first sensing element may be a reference beam.

Abstract: Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.

Abstract: An improved method and system for image alignment of an inspection image are disclosed. An improved method comprises acquiring an inspection image, acquiring a reference image corresponding to the inspection image, acquiring a target alignment between the inspection image and the reference image based on characteristics of the inspection image and the reference image, estimating an alignment parameter based on the target alignment, and applying the alignment parameter to a subsequent inspection image.

Abstract: An improved method and system for correcting inspection image error are disclosed. An improved method comprises acquiring a set of first beam positions on a test wafer while a wafer stage supporting the test wafer moves at a first velocity; acquiring a set of second beam positions, corresponding to the set of first beam positions, on the test wafer while the wafer stage moves at a second velocity; calculating a beam position displacement of a beam while the wafer stage moves at a third velocity in a range of velocities from the first velocity to the second velocity; and adjusting a beam position of the beam based on the calculated beam position displacement.

Abstract: Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

Abstract: A system includes a radiation source, an optical system, an optical element, a detection system, and a processor. The radiation source is configured to generate a radiation beam. The optical system is configured to direct the radiation beam toward a target structure and to receive the scattered radiation. The target structure is configured to produce scattered radiation comprising one or more scattered beams. The optical element is configured to control a position of the one or more scattered beams. The detection system is configured to receive a portion of the position-controlled scattered radiation and to generate a detection signal. The processor is configured to determine a property of the target structure based on at least the detection signal.

Abstract: An aperture for detecting a laser beam misalignment, the aperture comprising: a body including a first opening and defining a first axis; a beam dump; an optical element including a second opening wherein the first opening and the second opening are coaxial with the first axis, the optical element being configured to redirect a misaligned laser beam to a detector or to split a misaligned laser beam into at least two sub-beams; a laser beam detection system configured to detect laser light, wherein the optical element is configured to direct a first sub-beam to the beam dump, and to direct a second sub-beam to the laser beam detection system. Also described is an aperture including an enclosure, a method of detecting misalignment of a laser beam, a radiation source comprising such an aperture, a lithographic apparatus comprising such a radiation source or aperture, and the use of the same in a lithographic apparatus or method.

Abstract: The embodiments of the present disclosure provide a sensor substrate for a charged particle optical device and/or a charged particle assessment apparatus, the sensor substrate comprising: at least one distance sensor configured to generate a measurement signal representative of a distance between the distance sensor and a facing surface of a target; and at least one charged particle optical component.

Abstract: Systems and methods of inspecting a sample using a charged-particle beam apparatus with enhanced probe current and high current density of the primary charged-particle beam are disclosed. The apparatus includes a charged-particle source, a first condenser lens configured to condense the primary charged-particle beam and operable in a first mode and a second mode, wherein: in the first mode, the first condenser lens is configured to condense the primary charged-particle beam, and in the second mode, the first condenser lens is configured to condense the primary charged-particle beam sufficiently to form a crossover along the primary optical axis. The apparatus further includes a second condenser lens configured to adjust a first beam current of the primary charged-particle beam in the first mode and adjust a second beam current of the primary charged-particle beam in the second mode, the second beam current being larger than the first beam current.

Abstract: A method of operating a lithographic apparatus that comprises: a projection system configured to provide exposure radiation for patterning a substrate underneath the projection system; a first stage configured to support a first substrate; a second stage configured to support a second substrate; and a third stage accommodating a component that includes at least one of a sensor and a cleaning device; wherein the method comprises starting a pre-exposure scrum sweep operation after starting a substrate exchange operation; wherein during the pre-exposure scrum sweep operation, the third stage moves away from underneath the projection system while the second stage moves to underneath the projection system; wherein during the substrate exchange operation, the first substrate is unloaded from the first stage.

Abstract: A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charg

Abstract: A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.