Abstract: Systems and methods of observing a sample in a multi-beam apparatus are disclosed. A multi-beam apparatus may comprise an array of deflectors configured to steer individual beamlets of multiple beamlets, each deflector of the array of deflectors having a corresponding driver configured to receive a signal for steering a corresponding individual beamlet. The apparatus may further include a controller having circuitry to acquire profile data of a sample and to control each deflector by providing the signal to the corresponding driver based on the acquired profile data, and a steering circuitry comprising the corresponding driver configured to generate a driving signal, a corresponding compensator configured to receive the driving signal and a set of driving signals from other adjacent drivers associated with adjacent deflectors and to generate a compensation signal to compensate a corresponding deflector based on the driving signal and the set of driving signals.

Abstract: The invention relates to a bearing device arranged to support in a vertical direction a first part of an apparatus with respect to a second part of the apparatus, comprising a magnetic gravity compensator.

Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.

Abstract: A fluid handling structure for a lithographic apparatus, the structure having: an aperture for the passage therethrough of a beam; a first part; and a second part, wherein the first and/or second part define a surface for the extraction of immersion fluid, relative movement between the first and second parts is effective to change a position of fluid flow into or out of the surface relative to the aperture, and the first or second part has at least one through-hole for the fluid flow and the other of the first or second part has at least one opening for the fluid flow, the at least one through-hole and at least one opening being in fluid communication when aligned, the relative movement allowing alignment of the at least one opening with different ones of the through-hole to change the position of the fluid flow into or out of the surface.

Abstract: A method including obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition; computing an approximate of a cost function, based on the selected component; and producing an adjustment of the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function.

Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.

Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a first source of the lithographic apparatus; classifying the first source into a class among a plurality of possible classes, based on one or more numerical characteristics of the first source, using a machine learning model, by a computer; determining whether the class is among one or more predetermined classes; only when the class is among the one or more predetermined classes, adjusting one or more source design variables to obtain a second source.

Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.

Abstract: A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.

Abstract: A system comprises a reflective optical element with a reflective surface that is configured to reflect a radiation beam. The reflective optical element also has a body. The system includes a thermal conditioning mechanism operative to thermally induce a deformation of the body under control of a controller. By means of controllably deforming the body, the shape of the reflective surface can be adjusted in a controlled manner.

Abstract: A device for connecting a fiber preform including a plurality of elongate holes extending substantially parallel to a longitudinal axis of the fiber preform to a pressure supply system, the device including a first surface to be connected to an end face of the fiber preform where the plurality of elongate holes end, a second surface including at least two ports configured to be in fluid connection with the pressure supply system, and a channel system within the device connecting the plurality of elongate holes at the first surface to the at least two ports, wherein a density of the at least two ports at the second surface is smaller than a density of the plurality of corresponding elongate holes at the first surface.

Abstract: A positioning device configured to position an object, the positioning device including: an object table configured to hold the object; an electromagnetic motor configured to displace the object table, the electromagnetic motor including: a coil assembly mounted to the object table, a superconductor assembly configured to co-operate with the coil assembly to generate a driving force on the object table, and a cryogenic enclosure configured to enclose the superconductor assembly and maintain the superconductor assembly in a superconductive state; a support for supporting the electromagnetic motor; and an electromagnetic support configured to suspend the cryogenic enclosure relative to the support, thereby maintaining a gap between the cryogenic enclosure and the support.

Abstract: The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.

Abstract: Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Abstract: A method comprising determining aberrations caused by each lithographic apparatus of a set of lithographic apparatuses, calculating adjustments of the lithographic apparatuses which minimize differences between the aberrations caused by each of the lithographic apparatuses, and applying the adjustments to the lithographic apparatuses, providing better matching between the aberrations of patterns projected by the lithographic apparatuses.