Abstract: Disclosed is a metrology sensor system, such as a position sensor. The system comprises an optical collection system configured to collect diffracted or scattered radiation from a metrology mark on a substrate, said collected radiation comprising at least one parameter-sensitive signal and noise signal which is not parameter-sensitive, a processing system operable to process the collected radiation; and a module housing. An optical guide is provided for guiding the at least one parameter-sensitive signal, separated from the noise signal, from the processing system to a detection system outside of the housing. A detector detects the separated at least one parameter-sensitive signal. An obscuration for blocking zeroth order radiation and/or a demagnifying optical system may be provided between the optical guide and the detector.

Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

Abstract: A substrate holder, a method of manufacturing of the substrate holder and a lithographic apparatus having the substrate holder. In one arrangement, a substrate holder is for use in a lithographic apparatus. The substrate holder is configured to support a lower surface of a substrate. The substrate holder has a main body, a plurality of burls and a coating. The main body has a substrate-facing face. The plurality of burls protrudes from the substrate-facing face. Each burl has a distal end configured to engage with the substrate. The distal ends are configured for supporting the substrate. The coating is on the substrate-facing face between the burls. Between the burls the substrate-facing face has an arrangement of areas. Adjacent areas are separated by a step-change in distance below the support plane. Each step-change is greater than a thickness of the coating.

Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

Abstract: A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on a surface plane of the alignment mark. The scattering is mainly by excitation of a resonant mode in the periodic structure parallel to the surface plane. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that equals an integer multiple of a wavelength present in the spectrum of the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is equal to half of the wavelength present in the spectrum of the radiation.

Abstract: A cleaning device for an apparatus for processing production substrates, the cleaning device including: a body having dimensions similar to the production substrates so that the cleaning device is compatible with the apparatus, the body having a first major surface and a second major surface facing in the opposite direction to the first major surface; a chamber within the body configured to accommodate contaminants; an inlet from the first major surface to the chamber and configured to allow contaminants to be drawn into the chamber by a flow of fluid; and an outlet from the chamber to the second major surface, the cleaning device being configured to allow the fluid to exit the chamber but to prevent a contaminant leaving the chamber.

Abstract: A system including: a substrate support configured to hold a substrate; a conductive or semi-conductive element contacting the substrate support and covering at least part of the substrate support; and a charging device configured to apply a positive potential to the conductive or semi-conductive element with respect to the part of the substrate support that is covered by the conductive or semi-conductive element.

Abstract: A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: Disclosed is a metrology apparatus for use in a lithographic manufacturing process. The metrology apparatus comprises a radiation source comprising a drive laser having an output split into a plurality of optical paths, each comprising a respective broadband light generator. The metrology apparatus further comprises illumination optics for illuminating a structure, at least one detection system for detecting scattered radiation, having been scattered by the structure and a processor for determining a parameter of interest of the structure from the scattered radiation.

Abstract: A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises determining an offset parameter, determining the second position; and determining a first position from the second position and the offset parameter, the position of the mark being the first position. The offset parameter is a measure of a difference in: a first position that is indicative of the position of the feature; and a second position that is indicative of the position of the feature. The offset parameter may be determined using a first measurement apparatus and the second position may be determined using a second, different measurement apparatus.

Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.

Abstract: A sensor apparatus comprising an acoustic assembly arranged to transmit an acoustic signal to a substrate and receive at least part of the acoustic signal after the acoustic signal has interacted with the substrate, a transducer arranged to convert the at least part of the acoustic signal to an electronic signal, and, a processor configured to receive the electronic signal and determine both a topography of at least part of the substrate and a position of a target of the substrate based on the electronic signal. The sensor apparatus may for part of a lithographic apparatus or a metrology apparatus.

Abstract: A method for assigning features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein the method including assigning the features into the first features and the second features based on a patterning characteristic of the features.

Abstract: A lithographic apparatus or frame assembly, comprising: a first and second pneumatic support, being arranged to control position of a frame, each of said pneumatic supports accommodating a pressure chamber; a frame position control system, comprising; a first position sensor device, configured to generate measurement data relating to the position of the frame; a first pressure controller, configured to control the pressure in the pressure chamber of the first pneumatic support on the basis of the measurement data generated by the first position sensor device; a pressure differential sensor device, configured to generate data relating to the difference between the pressure in the pressure chambers of the first and the second pneumatic support; a second pressure controller, configured to control the pressure in the pressure chamber of the second pneumatic support on the basis of the measurement data from the pressure differential sensor device.

Abstract: A temperature sensing probe including a temperature sensor in an elongate housing wherein the elongate housing of the probe is elongate in a first direction and the elongate housing is comprised of a material which has a thermal conductivity of at least 500 W/mK at 20° C. in at least one direction.

Abstract: A lithographic apparatus including a fluid handling structure configured to contain immersion fluid in a space adjacent to an upper surface of the substrate table and/or a substrate located in a recess of the substrate table, a cover having a planar main body that, in use, extends around a substrate from the upper surface to a peripheral section of an upper major face of the substrate in order to cover a gap between an edge of the recess and an edge of the substrate, and an immersion fluid film disruptor, configured to disrupt the formation of a film of immersion fluid between an edge of the cover and immersion fluid contained by the fluid handling structure during movement of the substrate table relative to the fluid handling structure.