Abstract: The high-power radiator includes a discharge space (12) bounded by a metal electrode (8), cooled on one side, and a dielectric (9) and filled with a noble gas or gas mixture, both the dielectric (9) and also the other electrode situated on the surface of the dielectric facing away from the discharge space (12) being transparent for the radiation generated by quiet electric discharges. In this manner, a large-area UV radiator with high efficiency is created which can be operated at high electrical power densities of up to 50 kW/m.sup.2 of active electrode surface.

Abstract: A gate-turn-off power semiconductor device of the GTO or FCTh type, having a control zone of alternately arranged finely subdivided cathode fingers and gate trenches, wherein the gate trenches are constructed as narrow deep slots, preferably by a crystal-direction-selective wet chemical etching process, while the original substrate surface is retained in the remaining area of the semiconductor substrate. Compared with the conventional "recessed-gate" construction, this quasi-planar construction offers a number of advantages in the electrical behavior, in the integration of auxiliary functions and in the production.

Abstract: A process for separating off poisonous volatile chemical compounds from a mixture (7) of solid particles having a particle size of up to 200 .mu.m, the mixture being brought continuously or intermittently at an average rate of 5.degree. to 200.degree. C./min in zones of progressively increasing temperature up to 1350.degree. C. and the poisonous chemical compounds being evaporated and forced to leave the reaction space (6). The poisonous compounds are subsequently condensed and discharged. The non-evaporated residue is gradually melted, and the melt (8) is continuously or intermittently discharged from the reaction space (6) and solidified. The particles carried over into the gas phase are preferably retained by a hot gas filter, liquefied and passed into the melt.

Abstract: In a semiconductor component, a pn junction which emerges at a main surface (2) of a semiconductor substrate (1) at the edge of a highly doped zone (3) is formed by a laterally bounded, highly doped zone (3) extending inwards from a main surface (2) of the semiconductor substrate (1) and by a lightly doped zone surrounding the highly doped zone. The edge of the highly doped zone (3) is formed by a guard zone (6b) whose doping density gradually decreases in a direction parallel to the main surface (2) from the highly doped zone (3) towards the pn junction. Any surface breakdown of the pn junction is prevented by the fact that the guard zone (6b) has a maximum penetration depth near the highly doped zone (3) and that the maximum penetration depth of the guard zone (6b) is greater than the penetration depth of the adjacent highly doped zone (3). The guard zone (6b) has a maximum doping density which does not appreciably exceed 10.sup.15 cm.sup.

Abstract: In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (.alpha.) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high edge concentration and a p-type base edge layer (5) of greater depth and lower edge concentration.The production of the two p-type base layers (4, 5) is preferably carried out by simultaneous diffusion of two acceptors with different diffusion constants.

Abstract: In this multi-cylinder steam turbine, compensation is provided for the axial thermal expansion, from the bearing housing (5) of the medium pressure partial turbine (1), of the low pressure part of the shafting (4) by the low pressure steam feed pipe (15, 16) rigidly connected to the medium pressure partial turbine (1) being rigidly connected to the inner casing (11, 12) of the two-casing low pressure partial turbines (2, 3). Because of the equal temperatures, the part of the shafting (4) mentioned and the low pressure steam feed pipes (15, 16) expand equally so that the axial clearances between the nozzle guide vane and rotor blade rings of the low pressure partial turbines (2, 3) are also substantially retained. The otherwise conventional connecting elements between the medium pressure partial turbines and the low pressure partial turbines with their associated sealing problems on the outer casings disappear.

Abstract: A method for producing a gate turn-off thyristor (GTO) having a semi-conductor substrate (1) with at least one p-conducting anode layer (4), one n-type base layer (6), one p-type base layer (7) which is in electrical contact with a gate, and one n-conducting cathode layer (8) has a cathode layer (8) with a highly doped zone (10) acting as an n.sup.+ emitter and a lightly doped zone (9) in which highly doped zone (10) adjoins the surface of the semi-conductor substrate (1) and has a doping density which is at least an order of magnitude higher than that of the p-type base layer (7), the lightly doped zone (9) is situated between a pn junction J.sub.1, produced by the p-type base layer (7) and the cathode layer (8), and the highly doped zone (10) of the cathode layer (8) including producing the doping profile of the cathode layer in first and second diffusion steps, the depth and the breakdown properties of the pn junction J.sub.

Abstract: A semiconductor component including a semiconductor substrate having a main electrode and a control electrode. The main electrode includes a groove in which is inserted a U-shaped insulation body. The control electrode is disposed in the groove and is insulated from the main electrode by the insulation body. A spring is provided in the groove between the control electrode and the insulation body and presses the control electrode against the semiconductor substrate. In this way, the control electrode is displaceable with respect to the insulation body in a direction perpendicular to the main surface of the semiconductor substrate.

Abstract: A software process for automatically generating a functional diagram graphic, which can be used for automatically generating functional diagrams from a control program for a stored-program control system on a graphical display device, particularly a programming device for such a control system. The functional diagrams generated have a high information density. They can contain signal branchings and signal crossings and function blocks with several outputs further connected to other function blocks.

Abstract: In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (.alpha.) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high edge concentration and a p-type base edge layer (5) of greater depth and lower edge concentration.The production of the two p-type base layers (4, 5) is preferably carried out by simultaneous diffusion of two acceptors with different diffusion constants.

Abstract: In a displacement machine for compressible media, having a delivery space (6) which is delimited by spiral-shaped peripheral walls (8, 9) extending perpendicularly from a side wall and leads from an inlet (2) outside the spiral to an outlet (3) inside the spiral, and having a spiral-shaped displacement body (5) which projects into the delivery space (6) and is mounted with respect to the delivery space so as to execute a rotary, twist-free movement, the center (10) of said displacement body is offset eccentrically relative to the center (11) of the peripheral walls (8, 9) in such a way that the displacement body (5) at all times almost touches both the outer and the inner peripheral wall (9 and 8 respectively) of the delivery space (6) at in each case at least one advancing sealing line. The sealing line at the inlet-side end of the outer peripheral wall (9) is advanced relative to the 0.degree./360.degree. position by an angle (.alpha.) between 5.degree. and 50.degree.

Abstract: Conductor in strip, sheet or wire form with an electrical conductivity of at least 0.85.times.10.sup.6 .OMEGA..sup.-1 cm.sup.-1 at 77.degree. K. composed of a composite material of a metal matrix (1) and particles (2) composed of a high-temperature superconductor of the type RE Ba.sub.2 Cu.sub.3 O.sub.6.5-7.5 embedded therein and arranged rectilinearly in the longitudinal direction, RE generally denoting a rare earth metal. Preferably RE=yttrium and specifically the substance YBa.sub.2 Cu.sub.3 O.sub.7 and the particle diameter=0.1-100 .mu.m, more narrowly 0.2-20 .mu.m. Optionally an additional metal sheath which envelops the body forming the matrix (1).

Abstract: The compressed-gas breaker has a movable contact member (1) and a fixed contact member (2) having in each case at least one arcing contact (6, 7) as well as, fixed on the movable contact member (1), a pressure space (10) of a volume independent of the switching travel and storing arc-compressed quenching gas in breaking, and has an insulating nozzle (8) arranged coaxially to the two contact members (1, 2). With this breaker, the parting speed of the arcing contacts (6, 7) is increased significantly with respect to the drive speed without an appreciable increase in its drive energy and without changing its quenching geometry. The arcing contact (7) of the fixed contact member (2) being guided displaceably in axial direction in a sliding contact (14) and being part of a converter element is operated by the movable contact member (7) and arranged downstream of the nozzle constriction (9) of the insulating nozzle (8).

Abstract: A semiconductor component including a doped semiconductor substrate into which an oppositely doped upper doping region is introduced from an upper surface to form a P-N junction which emerges at the upper surface in an edge region of the substrate. To impove the reverse breakdown voltage capacity below the surface inner section of the P-N juction, an oppositely doped lower doping region is buried in the semiconductor substrate beneath where the P-N juction emerges at the upper surface. The oppositely doped, lower doping region reduces the charge carrier concentration in the critical area. The structure retains the planar surface and is easily producible.

Abstract: In a gate turn-off power semiconductor component in the form of a field-controlled thyristor (FCTh) with (14) separated from each other by trenches (10), means of control which make possible a constricton of the current-carrying channel over the entire depth of the cathode finger (14) and at the same time do not increase or do not substantially increase the ON resistance of the component are additionally provided in the region of the trench walls (9).In an exemplary embodiment, a p-doped wall layers (4), which have a reduced doping concentration compared with the gate regions (8) on the trench floors are introduced into the trench walls (9) as means.

Abstract: In a metal-ceramic housing for a high-power GTO, a space-saving auxiliary cathode connection (5a) capable of carrying current is achieved in that it is constructed by embedding in the insulating ring (4) of the housing and is connected directly to the cathode contact plate (9) via its own connecting elements (11, 13, 15).

Abstract: In a displacement machine for compressible media, having four delivery spaces arranged in a fixed housing, each housing half (7) has two delivery spaces (11, 11') which are offset by about 180.degree. with respect to one another and extend in a spiral shape from an inlet (12,12') to an outlet (13). Each delivery space is allocated a displacement body which fits into the latter and is held, as a spiral-shaped strip (3,3') perpendicularly on a disk-shaped rotor (1) which can be driven eccentrically with respect to the housing. For the guidance of said rotor a second eccentric guiding arrangement (10) arranged at an interval from a first eccentric drive arrangement (9) is provided in the housing. For the flexible accommodation of any length differences between delivery space and displacement body, the guide eye (5) of the eccentric guiding arrangement is connected to the disk-shaped rotor (1) via a stem (29) which is formed as a tangential extension on the inlet-side end of one of the spiral-shaped strips (3).

Abstract: The high-power radiator includes a discharge space (4) bounded by dielectrics (1, 2) and filled with a noble gas or gas mixture and electrodes (5, 6). The electrodes (5, 6) are transparent to the radiation produced by silent electrical discharges and are, situated on the surfaces of the di-electrics facing away from the discharge space. In this manner, a large-area UV radiator with high efficiency is produced which can be operated with high electrical power densities of up to 50 kW/m.sup.2 of active electrode surface.

Abstract: Process for stripping, by electroless chemical method, a surface-protection layer (3) with a high chromium content from the main body (2) of a component composed of a nickel-based or cobalt-based superalloy by immersion in a chloride solution (1) which does not release oxygen, which contains iron (III) and copper (II) and which contains still further additives, but no components of any kind which form chromium oxide. Temperature of the bath 50.degree. to 70.degree. C. Duration of residence of the component in the bath 10 to 150 h.Typical bath composition:200-400 gl: FeCl.sub.3 . 6H.sub.2 O0.5-5 gl: CuCl.sub.2 . 2H.sub.2 O10-20 m/l: Glycerol120-200 m/l: Concentrated HClRemainder: H.sub.

Abstract: This therapy simulator contains a radiation source (1) in a radiator head. An image acquisition unit (7) is connected to the radiator head and can be swivelled jointly with the latter about a patient's couch (9). At least two diaphragm systems, arranged offset in the direction of the principal axis (2) of the radiation source (1), are arranged in the radiator head. At least one of these diaphragm systems is designed as a depth diaphragm system (4) and at least one other is designed as a measuring diaphragm system (5).A therapy simulator is to be created on which, together with the setting of the measuring diaphragm, the corresponding depth diaphragm is adjusted automatically. This is achieved by the actuating elements of the at least two diaphragm systems being designed such that the diaphragm systems projected into the image plane of the image acquisition unit (7) move at the same speed.