Abstract: A control circuit for outputting a pulsed signal includes a switch circuit having a first terminal, a second terminal, a third terminal, a fourth terminal, a first control terminal, and a second control terminal, where the first terminal and the second terminal input the DC signal, the third terminal and the fourth terminal output the pulsed signal, the third terminal and the fourth terminal output the pulsed signal in response to the first control terminal and the second control terminal receiving the first signal, and stop outputting the pulsed signal in response to the first control terminal and the second control terminal receiving the second signal; and an energy storage circuit having two terminals connected to the first terminal and the second terminal of the switch circuit to store residual electric energy of the switch circuit when the switch circuit does not output the pulsed signal.

Abstract: The present disclosure provides a sputtering reaction chamber and a process assembly of the sputtering reaction chamber. The process assembly includes a liner, and the liner includes an integrally formed body member and a cover member. The cover member may extend from a bottom of the body member to an inner side of the body member and may be configured to press an edge of a to-be-processed workpiece when a process is performed. A cooling channel may be arranged in the cover member and the body member and may be configured to cool the cover member and the body member by transferring coolant. The process assembly of the sputtering reaction chamber and the sputtering reaction chamber provided by the present disclosure can reduce heat radiation of the process assembly to the to-be-processed workpiece and released gases and impurities to effectively reduce a whisker defect and improve a product yield.

Abstract: An etching method for selectively etching a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate.

Abstract: The present disclosure provides an electrostatic chuck and a reaction chamber. The electrostatic chuck includes an insulation layer and a heating body arranged at a bottom of the insulation layer. The electrostatic chuck further includes a cooling pipeline. The cooling pipeline is arranged under the heating body, spaced apart from the heating body, and configured to transfer cooling liquid to absorb heat radiated by the heating body. The electrostatic chuck further includes a thin-wall structure respectively connected to the heating body and the cooling pipeline. The thin-wall structure is configured to reduce heat dissipation efficiency between the heating body and the cooling pipeline. The electrostatic chuck provided by the present disclosure may realize stable temperature control for the heating body during a processing process to effectively reduce whisker defects and to improve the product yield.

Abstract: A spray device includes a spray assembly. The spray assembly is configured to spray cleaning liquid towards a to-be-cleaned surface of a to-be-processed workpiece. The spray assembly includes a spray head and multiple liquid inlet pipelines. The spray assembly is configured to spray cleaning liquids with different concentrations, temperatures, and/or flow rates corresponding to different positions in a radial direction of the to-be-cleaned surface to cause a cleaning rate of the cleaning liquids at the different positions in the radial direction of the to-be-cleaned surface to be consistent.

Abstract: The present disclosure provides a host computer, and a control system and method of a machine. The host computer includes a control unit, a service configuration unit, and a functional flow unit. The control unit is configured to control a lower level computer to execute items of a functional flow of the machine. The service configuration unit is configured with action instruction information used to execute the functional flow of the machine and configured to interact with the control unit. The functional flow unit stores items of the functional flow of the machine edited by a user and is configured to interact with the control unit. A technical solution of the host computer and the control system and method of the machine may realize an editable function of the functional flow of the machine to improve flexibility, convenience, and a degree of automation of addition/modification of the functional flow.

Abstract: The present disclosure discloses a reaction chamber, including a chamber body, the chamber body being connected to an upper cover by an insulation member, the chamber body and the upper cover forming an inner chamber, and the upper cover being provided with a through-hole that is communicated with the inner chamber; a gas inlet mechanism including an insulation body at least partially arranged in the through-hole, a gas inlet channel being arranged in the insulation body, a flange part being arranged on one side of the insulation body facing away from the inner chamber, the flange part being grounded and configured to communicate a gas inlet end of the gas inlet channel with a gas output end of a gas inlet pipe configure to transfer a reaction gas, a gas outlet end of the gas inlet channel being communicated with the inner chamber.

Abstract: A pulse modulation system of a radio frequency (RF) power supply includes a modulation output circuit and a frequency adjustment circuit. The modulation output circuit is configured to modulate an output signal of the RF power supply and output a pulse modulation RF signal. Each pulse cycle of the pulse modulation RF signal includes a pulse-on phase and a pulse-off phase. An overshoot sub-phase is set in an initial preset time of the pulse-on phase. The frequency adjustment circuit is electrically connected to the modulation output circuit. The frequency adjustment circuit is configured to adjust an RF frequency of the pulse modulation RF signal of the overshoot sub-phase to cause a reflected power of the overshoot sub-phase to satisfy a preset reflected power or a reflected coefficient to satisfy a preset reflected coefficient.

Abstract: Embodiments of the present disclosure disclose a physical vapor deposition (PVD) chamber and a PVD apparatus. The PVD chamber includes a chamber body. An upper electrode assembly is arranged in the chamber body. The upper electrode assembly includes a base plate assembly for carrying a magnetron, a backplate arranged at an interval with the base plate assembly, and a connection assembly that connects the base plate assembly to the backplate. The connection assembly is connected to the base plate assembly. The connection assembly is threadedly connected to the backplate, so that the interval between the base plate assembly and the backplate can be adjusted by moving the connection assembly relative to the backplate. The PVD chamber and the PVD apparatus of embodiments of the present disclosure can conveniently adjust a size of a target magnetic gap between the base plate assembly and the target according to requirements or actual conditions.

Abstract: A reaction chamber includes a chamber body, an inner lining, and a lifting drive device. The inner lining is arranged in the chamber body. A wafer transfer opening is arranged at a sidewall of the chamber body. The inner lining includes a first inner lining and a second inner lining. The first inner lining is fixedly connected to the chamber body. The second inner lining is coaxially sleeved outside or inner sleeved at the first inner lining. The first inner lining and the second inner lining include a gap in a horizontal direction. The lifting drive device is configured to be connected to the second inner lining, when performing process processing on a wafer, drive the second inner lining to a predetermined first position to cause the second inner lining to cover the wafer transfer opening and the first inner lining and the second inner lining to partially overlap.

Abstract: A reaction chamber includes an upper electrode device and a lower electrode device. The lower electrode device is disposed in the reaction chamber for carrying a workpiece to-be-processed. The upper electrode device includes a dielectric cylinder, a coil, an upper power source, an upper electrode plate, a first switch, and a second switch. The dielectric cylinder has a hollow cylindrical structure and is disposed at an upper portion of a chamber wall of the reaction chamber. The coil is arranged around the dielectric cylinder. The upper electrode plate is located above the lower electrode device. The first switch can selectively electively connect the upper power source to a first terminal of the coil or to the upper electrode plate. The second switch can selectively electrically connect a second terminal of the coil to the ground or to the upper electrode plate.

Abstract: Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

Abstract: A plasma system and a filter device are provided. In the system, an area surrounded by a dielectric window is configured as a first chamber for accommodating plasma. A first adapter is arranged under the dielectric window. An area surrounded by the first adapter is configured as a second chamber. A lower electrode platform is placed in the second chamber to carry a workpiece. A filter member of the filter device is placed at an intersection of the first chamber and the second chamber. The filter member includes through-holes configured to filter ions from the plasma. A first extension member extends from the filter member in a first direction and is placed over the first adapter. A second extension member extends from a position of the filter member adjacent to the first extension member to an inner side of the first adapter.

Abstract: A material processing path selection method includes calculating a plurality of candidate material processing paths, determining a bottleneck process tank, and for each of the plurality of candidate material processing paths, calculating a bottleneck process tank utilization rate to select a candidate material processing path with a highest bottleneck process tank utilization rate in the plurality of candidate material processing paths as a target material processing path. The bottleneck process tank is a process tank having a highest use frequency among all process tanks, A use frequency of the process tank is equal to a total process time length of all materials that need to be transferred to the process tank divided by a number of all the materials that need to be transferred to the process tank.

Abstract: A deposition method includes depositing an adhesive layer on a workpiece to be processed and depositing a magnetic/isolated unit, where the magnetic/isolation unit includes at least one pair of a magnetic film layer and an isolation layer that are alternately disposed. The deposition method of the magnetic thin film laminated structure, the magnetic thin film laminated structure and the micro-inductive device provided by the disclosure can increase a total thickness of the magnetic thin film laminated structure, thereby broadening the application frequency range of the inductive device fabricated thereby.

Abstract: The present disclosure discloses a lift thimble system, a reaction chamber, and semiconductor processing equipment, including a wafer thimble device configured to lift a wafer from a base by rising or drop the wafer onto the base by descending, and a focus ring thimble device configured to lift a focus ring from an initial position of the focus ring by rising to cause an inner ring area of an upper surface of the focus ring to lift an edge area of the wafer, or cause the focus ring to return to the initial position by descending. The technical solutions of the system, the reaction chamber, and the equipment of the present disclosure improve maintenance efficiency of an abnormal situation, and double the service lifetime of the focus ring. Moreover, the technical solutions may further realize replacement of the focus ring without damaging reaction chamber vacuum to improve efficiency.

Abstract: The present disclosure provides an induction coil assembly and a reaction chamber. The induction coil assembly includes an induction coil arranged over a dielectric window of the reaction chamber. Two ends of the induction coil include a power input end and a ground end, respectively. A vertical spacing between the two ends of the induction coil and the dielectric window is greater than a vertical spacing between a portion between the two ends of the induction coil and the dielectric window. The induction coil and the reaction chamber provided by the present disclosure may reduce the capacitive coupling of the two ends of the induction coil by ensuring that the coupling strength of an RF magnetic field satisfies the requirement to reduce sputtering on the dielectric window and improve process results.

Abstract: The present disclosure provides a radio frequency (RF) source control method. An RF source includes at least one pair of a main power supply and a secondary power supply with a same frequency. The RF source control method includes dividing each process step of process steps of a plasma process into a plurality of time periods, and when performing each process step, maintaining a common exciter (CEX) phase locking delay angle of the at least one pair of the main power supply and the secondary power supply corresponding to each of the time periods at a predetermined value to provide an increased angular distribution uniformity of plasma. The RF source control method provided by the present disclosure may be used to adjust plasma distribution above a to-be-processed workpiece to average the plasma angular direction distribution of the entire process step as a whole to increase process uniformity of the to-be-processed workpiece.

Abstract: The present disclosure provides a spray device and a cleaning apparatus. The spray device includes an atomization structure, which is configured to atomize a cleaning liquid when the cleaning liquid is sprayed to form liquid droplets, and a jet structure, which is configured to spray a gas along a determined direction to cause the gas sprayed to collide with the liquid droplets to form atomized particles. The spray device provided by the present disclosure may increase cleaning uniformity and cleaning efficiency to improve cleaning process results, and may further reduce an impact force to the to-be-cleaned surface by the liquid droplets to a certain level. Thus, the damage to a surface pattern of a wafer may be reduced.