Abstract: A semiconductor processing device is provided. The device includes a reaction chamber, a first gas inlet mechanism, and a second gas inlet mechanism that includes a gas inlet, a uniform-flow chamber, at least one gas outlet, and at least one switch element. The gas inlet communicates with the uniform-flow chamber and arranged to deliver a process gas into the uniform-flow chamber. The at least one gas outlet is between the reaction chamber and the uniflow-flow chamber. The at least one switch element is disposed in each gas outlet and arranged to enable the uniform-flow chamber to communicate with the reaction chamber when the process gas is being delivered into the uniform-flow chamber through the gas inlet, and to isolate the uniform-flow chamber from the reaction chamber when no process gas is being delivered into the uniform-flow chamber.

Abstract: The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.

Abstract: An electrostatic chuck mechanism and a semiconductor processing device having the same are provided. The electrostatic chuck mechanism includes a base, an edge assembly, a main electrostatic heating layer, and an edge electrostatic heating layer. The base includes a loading surface for loading a wafer and a step surface surrounding the loading surface and located at an edge portion of the wafer. The edge assembly includes a focus ring disposed above the step surface and surrounding the loading surface, and an insulation ring disposed at a bottom of the base and supporting the base. The main electrostatic heating layer, disposed above the loading surface, is configured to secure the wafer and adjust temperature of the wafer. The edge electrostatic heating layer, disposed above the step surface, is configured to secure the focus ring and adjust temperature of the focus ring.

Abstract: A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.

Abstract: The present disclosure provides a microwave transmission apparatus. The microwave transmission apparatus includes a waveguide, configured to transmit microwaves emitted from a microwave source to a load; and an impedance matching structure, disposed in the waveguide the waveguide. The waveguide includes a microstrip interdigital capacitor. The impedance before the input end of the impedance matching structure is matched with the impedance after the input end of the impedance matching structure by adjusting an equivalent capacitance formed by the microstrip interdigital capacitor and/or a position of the microstrip interdigital capacitor along the extending direction of the waveguide.

Abstract: A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

Abstract: A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.

Abstract: The present disclosure provides an impedance matching method, an impedance matching device and a plasma generating device. The impedance matching method is implemented for matching an impedance of a load connected to an RF source to an impedance of the RF source, including: selectively performing an automatic matching step or a frequency scan matching step according to an operation mode of the RF source, wherein: in the automatic matching step, instructing a motor to drive an impedance matching network to provide a certain impedance; and in the frequency scan matching step, instructing the motor to stop driving and the RF source to perform a frequency scanning operation. According to the embodiments of the present disclosure, a phenomenon of unstable and non-repetitive matching caused by fast impedance changing during the impedance matching process can be effectively avoided, and a large processing window and process stability can be implemented.

Abstract: A filter circuit is connected between a heating source and a load for filtering the load, and includes an inductor branch and a capacitor branch connected in parallel. The inductor branch includes a one-piece structured integrated component, and the integrated component is configured with a transformer function member and an inductor function member. The inductor function member is connected in series between the heating source and the transformer function member for filtering the load. The transformer function member is connected in parallel with the load for transmitting a heating electric signal output by the heating source to the load.

Abstract: Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus are provided. The magnetron has a rotation center, and includes a first outer magnetic pole and a first inner magnetic pole of opposite polarities. The first outer magnetic pole has an annular structure around the rotation center. The first inner magnetic pole is located on the inner side of the first outer magnetic pole, and a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole. A straight line starting from the rotation center and along one of the radial directions passes through the first magnetic field track at least twice in succession, and the magnetic-field directions at the two positions of the first magnetic field track that the straight line passes through twice in succession are opposite to each other.

Abstract: A reaction chamber is provided. The reaction chamber includes a chamber body, a dielectric window, and a power supplier. The dielectric window is provided on top of the chamber body along a first direction and hermetically connected with the chamber body. Each coil of a plurality of sets of coils is wound around an outer surface of the dielectric window at an interval along the first direction. The plurality of sets of coils are connected in parallel, with first ends electrically coupled to the power supplier for supplying power to each set of the plurality of sets of coils, and with second ends grounded. The second ends of the plurality of sets of coils are arranged in proximity between the first ends.

Abstract: An impedance matching system is provided. The impedance matching system includes: an impedance matching device arranged between a radio frequency (RF) power supply and a reaction chamber, adapted to connect the RF power supply to the reaction chamber through a switch, and configured to automatically perform an impedance matching on an output impedance of the RF power supply and an input impedance of the impedance matching device; the switch and a load circuit, the switch being configured to enable the RF power supply to be selectively connected to the reaction chamber or to the load circuit; and a control unit configured to control the switch to connect the RF power supply to the reaction chamber or connect the RF power supply to the load circuit according to a preset timing sequence. The impedance matching device is configured to convert a continuous wave output of the RF power supply into a pulse output according to the preset timing sequence, and provide the pulse output to the reaction chamber.

Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

Abstract: An impedance matching method and device for a pulsed RF power supply are provided. The impedance matching method includes: a coarse adjustment step: performing adjustment based on a current load impedance to make a current reflection coefficient |?| no greater than an ignition reflection coefficient |?t|, and setting a current position as an ignition position; a fine adjusting step: keeping the ignition position unchanged, performing real-time adjustment based on the current load impedance to realize impedance matching, and setting a current position as a matching position; and a switching step: after impedance matching is realized for the first time, switching between the ignition position and the matching position in different pulse time durations of each subsequent pulse period to realize impedance matching in different pulse periods. The impedance matching method and device may improve matching efficiency, process stability and utilization of the pulsed RF power supply.

Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.

Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21?) disposed at the top of the cavity (20), a base (22) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24) and the dielectric window (21, 21?) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24).

Abstract: The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.

Abstract: Embodiments of the invention provide a tray device, a reaction chamber, and a MOCVD apparatus including the reaction chamber. According to an embodiment, the tray device includes a large tray, a rotating shaft, a small tray, and a supporting disk. The rotating shaft is connected with the center of the large tray and drives the large tray to rotate about the rotating shaft. The large tray is provided with a tray groove for placing the small tray. The supporting disk is located under the large tray. A sliding mechanism is provided between the supporting disk and the small tray, so that when revolving along with the large tray, the small tray spins under the function of the sliding mechanism.

Abstract: Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a?n+b(cos ?)m+c(tan ?)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.

Abstract: Embodiments of the invention provide a mechanical chuck and a plasma processing apparatus.