Abstract: The present disclosure provides a spray device and a cleaning apparatus. The spray device includes an atomization structure, which is configured to atomize a cleaning liquid when the cleaning liquid is sprayed to form liquid droplets, and a jet structure, which is configured to spray a gas along a determined direction to cause the gas sprayed to collide with the liquid droplets to form atomized particles. The spray device provided by the present disclosure may increase cleaning uniformity and cleaning efficiency to improve cleaning process results, and may further reduce an impact force to the to-be-cleaned surface by the liquid droplets to a certain level. Thus, the damage to a surface pattern of a wafer may be reduced.

Abstract: The present disclosure provides a lower electrode mechanism and a reaction chamber, the lower electrode mechanism includes a base for carrying a workpiece to be processed and a lower electrode chamber disposed under the base, the lower electrode chamber includes an electromagnetic shielding space and a non-electromagnetic shielding space isolated from each other, the chamber of the lower electrode chamber includes a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively connected to outside through the first through hole and the second through hole to prevent a plurality of first components disposed in the electromagnetic shielding space from being interfered by a second component disposed in the non-electromagnetic shielding space.

Abstract: Embodiments of the present disclosure provide a mask structure and a filtered cathodic vacuum arc (FCVA) apparatus. The mask structure is configured to prepare protrusions on a carrying surface of an electrostatic chuck and includes a main mask plate and a side mask plate that are made of a conductive metal. The main mask plate is configured to form a patterned film layer corresponding to the protrusions on the carrying surface of the electrostatic chuck. The side mask is configured to cover a side surface of the electrostatic chuck to avoid forming a film layer on the side surface. The mask structure can be electrically conductive. The mask structure may prevent the side surface of the electrostatic chuck from being coated when the protrusions are prepared on the carrying surface of the electrostatic chuck. Thus, the mask structure may be applied to an FCVA process.

Abstract: A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.

Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.

Abstract: The present disclosure provides a method and system for scheduling pieces of materials based on a real-time status of a device. Scheduling rules for scheduling the pieces of materials are obtained according to determined parameters. It is determined whether all designated transmission and process tasks of the pieces of materials are completed. If the designated transmission and processing tasks of the pieces of materials are completed, terminating the scheduling of the pieces of materials. If the designated transmission and processing tasks of the pieces of materials are not completed, each of the scheduling rules for scheduling the pieces of materials according to real-time status information of the device are traversed, and according to a traversing result, operation instructions corresponding to the scheduling rules for scheduling the pieces of materials are executed.

Abstract: The present disclosure provides an electrostatic chuck (ESC) and a method for manufacturing the plurality of protrusions of the ESC. The electrostatic chuck includes a support surface for carrying a workpiece and the plurality of protrusions distributed at intervals on the support surface. The protrusions are formed by a hydrogen-free amorphous carbon with a resistivity ranging from 10?4 ?·cm˜109?·cm. For the ESC provided by the present disclosure, the protrusions are formed by the hydrogen-free amorphous carbon and have a high hardness and a good wear resistance, which may effectively prevent a generation of particles. As such, the negative impact of the particles on the semiconductor process may be avoided, and the hydrogen does not dissociate in a high-temperature environment. Thereby, a problem that the protrusions may easily fall off and may not be suitable in the high-temperature environment (above 250° C.) may be solved.

Abstract: A magnetron drive mechanism is provided. The magnetron drive mechanism includes: a driving assembly, a rotating assembly, a transmission assembly, and a limiting assembly. The driving assembly is configured to drive the rotating assembly and the transmission assembly to rotate clockwise or counterclockwise around a first rotation axis. The rotating assembly is connected to a magnetron, and through the transmission assembly, the driving assembly drives the rotating assembly and the magnetron to rotate clockwise or counterclockwise around a second rotation axis. The second rotation axis and the first rotation axis are parallel with each other. The limiting assembly is configured to block the rotating assembly from rotating clockwise or counterclockwise, respectively, to confine the magnetron to positions at different radii of the first rotation axis. The present disclosure also provides a magnetron assembly and a reaction chamber.

Abstract: Embodiments of the invention provide a bearing device and a plasma processing apparatus. According to at least one embodiment, the bearing device includes a base, a base driving mechanism, a pressing ring and a baffle ring.

Abstract: An electrostatic chuck includes a support assembly including a base, a chuck placed at the base and configured to carry a workpiece, and a fastening assembly configured to removably fix the chuck at the base.

Abstract: A deadlock determination method includes constructing a new WRG and determining a deadlock. At least a process step that includes a plurality of resources is selected from process steps in a WRG that supports transporting a single piece of material. The plurality of resources corresponding to the selected process step are combined. A total capacity of each of the process steps is changed according to a combination result to construct the new WRG that supports transporting a plurality of pieces of material. The plurality of resources include apparatuses for performing the process steps. The total capacity is a sum of a number of workstations of resources corresponding to each process step. Determining a deadlock includes determining whether a piece of material scheduling deadlock occurs based on the new WRG. The plurality of resources include apparatuses for performing the process steps.

Abstract: The present disclosure provides an adjustable capacitor comprising a ferroelectric dielectric layer, a first electrode and a second electrode disposed on opposite sides of the ferroelectric dielectric layer. The adjustable capacitor further comprises a first control electrode and a second control electrode insulated from the first electrode and the second electrode. The first control electrode and the second control electrode are configured to provide an electric field to the ferroelectric dielectric layer, to adjust a dielectric constant of the ferroelectric dielectric layer by controlling an electric field strength, thereby adjusting the capacitance between the first and the second electrodes. The present disclosure also provides an impedance matching device and a semiconductor processing apparatus.

Abstract: A method for radio frequency impedance matching includes performing frequency scanning matching using first n pulse phases of first m pulse periods as a frequency scanning stage, and from an (m+1)-th pulse period to an M-th pulse period, maintaining a frequency scanning parameter of a pulse phase corresponding to each frequency scanning stage of each pulse period. The radio frequency includes M pulse periods, each pulse period includes N pulse phases, M and N are integers greater than 1, m and n are integers greater than 0, m<M, n?N, and i=1, 2, . . . , m. A start value of the frequency scanning parameter of each frequency scanning stage of an (i+1)-th pulse period is consistent with an end value of the frequency scanning parameter of each frequency scanning stage of the i-th pulse period. Accordingly, an end value of the frequency scanning parameter of each frequency scanning stage of an m-th pulse period matches a preset target value of the frequency scanning parameter.

Abstract: The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.

Abstract: A semiconductor manufacturing process is provided. A trench is formed in a semiconductor structure and an oxide layer is deposited on sidewalls of the trench. A solid-state by-product layer is formed on surfaces of the trench by introducing a first etchant gas to react with a naturally occurred oxide layer at the bottom of the trench and the deposited oxide layer. The solid-state by-product layer has a thickness on the bottom less than a thickness on the sidewalls. A second etchant gas is introduced into the trench to react with the solid-state by-product layer, thereby providing a thinned solid-state by-product layer on the sidewalls to protect the deposited oxide layer. By a heating process, the thinned solid-state by-product layer is removed from the sidewalls of the trench, exposing the deposited oxide layer and a surface portion of the semiconductor structure in the trench.

Abstract: Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Abstract: A matching method for multiple reaction chambers includes selecting at least one factor, setting an adjustment coefficient for the factor corresponding to each of the reaction chambers, and obtaining an input value of the factor to enter into each reaction chamber based on the target value of the factor and the adjustment coefficient corresponding to each of the reaction chambers. The processing factor has a target value and a real value corresponding to each of the reaction chamber. The adjustment coefficient is based on the real value and the target value of the factor being within a preset accuracy range when the corresponding chamber operates a process.

Abstract: A radio frequency (RF) pulse matching method includes presetting a matching threshold and initializing a pulse count value to a pulse reference value and loading pulse power to an upper electrode and a lower electrode. The upper electrode includes an upper RF power supply and a corresponding upper matching device. The lower electrode includes a lower RF power supply and a corresponding lower matching device. The method further includes collecting a pulse signal of the pulse power and calculating a matching parameter according to the pulse signal, determining a magnitude of the matching parameter relative to the matching threshold and resetting the pulse count value, causing the upper matching device to perform matching on the upper RF power supply or the lower matching device to perform matching on the lower RF power supply, and repeating processes until the upper RF power supply and the lower RF power supply are matched.

Abstract: A plasma source includes a dielectric cylinder, a coil sounding a circumference of the dielectric cylinder, and coil case encasing the coil. The coil case has a first gas inlet disposed at a bottom area of a sidewall of the coil case for introducing a cooling gas to the coil case. The coil case has a first gas outlet disposed at a top wall of the coil case for venting the cooling gas from the coil case.

Abstract: A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.