Abstract: Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Abstract: Some embodiments of the present disclosure provide a sputtering apparatus including a magnetron structure configured to erode a target according to a predetermined erosion rate profile symmetric to a central axis of the magnetron structure. The predetermined erosion rate profile includes a first peak rate in proximity to the central axis; and a second peak rate located at about from 0.7 to 0.75 of a radius of the target from the central axis.

Abstract: A cleaning device for atomizing and spraying liquid in two-phase flow comprising a nozzle provided with multiple liquid bypass pipelines each having liquid guiding outlets inclined at a predetermined angle and an exhaust mesh plate having vertical gas guiding outlets, which makes the high speed liquid flow and high speed gas flow sprayed out therefrom collide against each other sufficiently to form ultra-micro atomized particles with uniform and adjustable size. The ultra-micro atomized particles are sprayed out downwardly to the wafer surface under the acceleration and vertical orientation effects of an atomized particle guiding outlet to perform a reciprocating cleaning for the wafer. Other components such as an ultrasonic or megasonic generation unit, a gas shielding unit, a self-cleaning unit or a rotating unit can also be provided to perform the multifunction of the nozzle.

Abstract: Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a tubby structure and having an upper end which is an open end, and the isolation window being arranged at the open end of the chamber body and used for sealing the chamber. The chamber further includes an isolation window fixing structure used for fixing the isolation window at the open end of the chamber body and a first fixing part and a second fixing part connected with each other, the first fixing part being fixedly connected with an edge area of an upper surface of the isolation window, and the second fixing part being fixedly connected with the chamber body.

Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

Abstract: A heating chamber and a semiconductor processing apparatus are provided. The heating chamber includes: a heating barrel (17) disposed in the heating chamber and located above a substrate transferring window; an annular heating device (15) disposed around an inner side of the heating barrel and configured to radiate heat from a periphery to an interior of the heating barrel; a substrate cassette (14) configured to bear multiple layers of substrates and allow the multiple layers of substrates to be arranged at intervals in an axial direction of the heating barrel; and a substrate cassette lifting device (13) configured to drive the substrate cassette to move up into an internal spare defined by the annular heating device, or move down to a position corresponding to the substrate transferring window.

Abstract: Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wall. The bottom side includes gas passages for plasma particles to pass through the liner.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.

Abstract: A thermocouple fixing device and a temperature measuring apparatus including a fixing joint, a sealing sleeve, a clamping piece and a locking nut sequentially sleeved outside the outer cover of the thermocouple is disclosed. The inside end of the fixing joint is fixed on the side wall of the vacuum generation chamber, the outside end of the fixing joint abuts on one end of the sealing sleeve; the two sides of the clamping piece abut on the other end of the sealing sleeve and the inside end of the locking nut, respectively; the internal threads of the locking nut are meshed with the external threads of the fixing joint; the clamping piece has a clamping element and a through hole for clamping the outer over of the thermocouple.

Abstract: A robot fork calibration method and system is provided. At least three non-linear arranged lower sensors are provided on a bottom surface of the fork to detect distances to a fixed detection point. The fixed detection point and a horizontal plane of the detection point define a reference coordinate system. Spatial coordinates of the lower sensors in the reference coordinate system are calculated and a plane equation as well as a tilted angle of the fork are obtained according to the spatial coordinates. Therefore, the height of the fork can be calibrated according to the Z axis coordinates of the lower sensors and the levelness of the fork can be calibrated according to the tilted angle.

Abstract: A robot teaching position correcting method and system is provided. The robot is driven to move along wafer pick-and-place operation paths defined by a sequence of waypoints. Distances between the waypoint and a wafer supporter of the wafer carrier above the waypoint are detected by upper sensors provided on a top surface of the robot when the robot is positioned at the waypoint. Then, the position parameter of the waypoint is corrected accordingly, so as to ensure safe wafer handling.

Abstract: A wafer pick-and-place method and system is provided. During the wafer pick-and-place operation, the distance between the fork of the robot and the target wafer is detected to determine whether the robot will collide with the target wafer. Furthermore, the tilted angle of the target wafer relative to the fork is calculated to determine whether the wafer will slip off. If collision or wafer slippery may occur, the pick-and-place operation is stopped. Therefore, wafer damages due to unexpected contact between the fork and the wafer can be avoided, and wafer handling safety can be improved.

Abstract: Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wait. The bottom side includes gas passages for plasma particles to pass through the liner.