Patents Assigned to Cabot Microelectronics Corporation
  • Patent number: 10676647
    Abstract: A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: June 9, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Na Zhang, Kevin P. Dockery, Zhao Liu, Roman A. Ivanov
  • Patent number: 10647887
    Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about ?5 mV to about ?35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: May 12, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Kevin P. Dockery, Pankaj K. Singh, Steven Grumbine, Kim Long
  • Patent number: 10640680
    Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: May 5, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lu Tian, Ke Zhang, Andrew Haerle, Hon Wu Lau
  • Patent number: 10639766
    Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: May 5, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Viet Lam, Ji Cui
  • Patent number: 10640679
    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: May 5, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Sudeep Pallikkara Kuttiatoor, Charles Hamilton, Kevin P. Dockery
  • Patent number: 10619075
    Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: April 14, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Alexander W. Hains, Juyeon Chang, Tina C. Li, Viet Lam, Ji Cui, Sarah Brosnan, Chul Woo Nam
  • Patent number: 10619076
    Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: April 14, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Alexander W. Hains, Juyeon Chang, Tina C. Li, Viet Lam, Ji Cui, Sarah Brosnan, Chul Woo Nam
  • Patent number: 10584266
    Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) ceria abrasive particles, (b) a cationic polymer, (c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof, (d) a saturated monoacid, and (e) an aqueous carrier. The invention also relates to a method of polishing a substrate.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: March 10, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventor: Sarah Brosnan
  • Patent number: 10562149
    Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: February 18, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Rui Ma, Nathan Speer, Chen-Chih Tsai, Kathryn Bergman
  • Patent number: 10522341
    Abstract: Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: December 31, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Helin Huang, Ji Cui
  • Patent number: 10508219
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: December 17, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Shoutian Li, William Ward, Pankaj Singh, Jeffrey Dysard
  • Patent number: 10486124
    Abstract: Described are systems and methods of mixing a liquid in a container, while liquid is being added or removed from the container, and with control of the speed of a mixing device that mixes the liquid to prevent an undesired mixing effect such as splashing, formation of a vortex, foaming, and vibration of a shaft of a mixing device used to mix the liquid.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: November 26, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Justin Stewart, Marc Maxim
  • Patent number: 10479911
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica and fused silica, (b) a compound of formula (I) or a combination of a compound of formula (II) and a hydrophobic organic compound, (c) an amino acid, (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: November 19, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventor: Selvaraj Palanisamy Chinnathambi
  • Patent number: 10418248
    Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. % to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: September 17, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Benjamin Petro, Glenn Whitener, William Ward
  • Patent number: 10414947
    Abstract: The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: September 17, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Viet Lam, Renhe Jia
  • Patent number: 10358579
    Abstract: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: July 23, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Ke Zhang, Michael White, Tsung-Ho Lee, Steven Grumbine, Hon-Wu Lau
  • Patent number: 10344186
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: July 9, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Alexander W. Hains, Tina Li
  • Patent number: 10315285
    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: June 11, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Tong Li, Michael White, Selvaraj Palanisamy Chinnathambi, Ke Zhang
  • Patent number: 10301508
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: May 28, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Viet Lam, Tina Li
  • Patent number: 10294399
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: May 21, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Roman Ivanov, Fernando Hung Low, Cheng-Yuan Ko, Glenn Whitener