Patents Assigned to Cabot Microelectronics Corporation
  • Patent number: 9505952
    Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
    Type: Grant
    Filed: March 5, 2015
    Date of Patent: November 29, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Dana Sauter Van Ness, Viet Lam, Alexander Hains, Steven Kraft, Renhe Jia
  • Patent number: 9499721
    Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: November 22, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Ernest Shen, Mary Cavanaugh
  • Patent number: 9481811
    Abstract: The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: November 1, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Tong Li, Hon-Wu Lau, Michael White
  • Patent number: 9469787
    Abstract: A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: October 18, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Ke Zhang, Selvaraj Palanisamy Chinnathambi
  • Patent number: 9463551
    Abstract: Disclosed is a polishing pad for chemical-mechanical polishing. The polishing pad has a porous interface and a substantially non-porous bulk core. Also disclosed are related apparatus and methods for using and preparing the polishing pad.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: October 11, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Robert Vacassy, George Fotou
  • Patent number: 9434859
    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: September 6, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Sudeep Pallikkara Kuttiatoor, Renhe Jia, Jeffrey Dysard
  • Patent number: 9422455
    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: August 23, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Sudeep Pallikkara Kuttiatoor, Kevin Dockery, Prativa Pandey, Renhe Jia
  • Patent number: 9425037
    Abstract: The invention relates to a chemical-mechanical polishing composition comprising silica, one or more tetraalkylammonium salts, one or more bicarbonate salts, one or more alkali metal hydroxides, one or more aminophosphonic acids, one or more rate accelerator compounds, one or more polysaccharides, and water. The polishing composition reduces surface roughness and PSD of polished substrates. The invention further relates to a method of chemically-mechanically polishing a substrate, especially a silicon substrate, using the polishing composition described herein.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: August 23, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, John Clark, Lamon Jones, Michael White
  • Patent number: 9422456
    Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: August 23, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Ernest Shen, Mary Cavanaugh
  • Patent number: 9422457
    Abstract: A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: August 23, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Ernest Shen, Mary Cavanaugh
  • Patent number: 9409276
    Abstract: The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: August 9, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Ching-Ming Tsai, Shi-Wei Cheng, Jia-Cheng Hsu, Kun-Shu Yang, Hui-Feng Chen, Gregory Gaudet, Sheng-Huan Liu
  • Patent number: 9401104
    Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: July 26, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hon Wu Lau, Michael White
  • Patent number: 9358659
    Abstract: The invention provides a chemical-mechanical polishing composition containing (a) abrasive particles, (b) a polymer, and (c) water, wherein (i) the polymer possesses an overall charge, (ii) the abrasive particles have a zeta potential Za measured in the absence of the polymer and the abrasive particles have a zeta potential Zb measured in the presence of the polymer, wherein the zeta potential Za is a numerical value that is the same sign as the overall charge of the polymer, and (iii) |zeta potential Zb|>|zeta potential Za|. The invention also provides a method of polishing a substrate with the polishing composition.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: June 7, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hon Wu Lau, Haresh Siriwardane
  • Patent number: 9343330
    Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: May 17, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Renjie Zhou, Paul Feeney, Christopher Thompson
  • Patent number: 9340706
    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: May 17, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Jakub Nalaskowski, Viet Lam, Renhe Jia, Jeffrey Dysard
  • Patent number: 9330703
    Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: May 3, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Haresh Siriwardane
  • Patent number: 9309442
    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: April 12, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Jeffrey Dysard, Steven Grumbine
  • Patent number: 9303190
    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: April 5, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: William Ward, Glenn Whitener, Steven Grumbine, Jeffrey Dysard
  • Patent number: 9303188
    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 5, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Lin Fu, William Ward, Glenn Whitener
  • Patent number: 9303187
    Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: April 5, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Dimitry Dinega, Kevin Moeggenborg, William Ward, Daniel Mateja