Patents Assigned to Cabot Microelectronics Corporation
  • Patent number: 9803106
    Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: October 31, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Ernest Shen, Mary Cavanaugh, Daniel Clingerman
  • Patent number: 9796882
    Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: October 24, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Alexander W. Hains, Tina Li
  • Patent number: 9771496
    Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: September 26, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Kevin Dockery, Helin Huang, Lin Fu, Tina Li
  • Patent number: 9758697
    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.
    Type: Grant
    Filed: March 5, 2015
    Date of Patent: September 12, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Dana Sauter Van Ness, Viet Lam, Renhe Jia
  • Patent number: 9752057
    Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: September 5, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hui-Fang Hou, William Ward, Ming-Chih Yeh, Chih-Pin Tsai
  • Patent number: 9701871
    Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: July 11, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, John Clark, Lamon Jones, Jeffrey Gilliland, Michael White
  • Patent number: 9688885
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-?-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-?-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: June 27, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Kraft, Andrew Wolff, Phillip W. Carter, Kristin Hayes, Benjamin Petro
  • Patent number: 9687956
    Abstract: The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises a plurality of grooves composed of at least a first plurality of concentric grooves having a first center of concentricity, and a second plurality of concentric grooves having a second center of concentricity. The first center of concentricity is not coincident with the second center of concentricity, the axis of rotation of the polishing pad is not coincident with at least one of the first center of concentricity and the second center of concentricity, the plurality of grooves does not consist of a continuous spiral groove, and the polishing surface does not comprise a mosaic groove pattern.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: June 27, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Ching-Ming Tsai, Shi-Wei Cheng, Kun-Shu Yang, Jia-Cheng Hsu, Sheng-Huan Liu, Feng-Chih Hsu, Craig Kokjohn
  • Publication number: 20170158993
    Abstract: The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2-hydroxy ethyl)methylammonium hydroxide (THEMAH) and/or carbohydrazide (CHZ).
    Type: Application
    Filed: July 17, 2015
    Publication date: June 8, 2017
    Applicant: Cabot Microelectronics Corporation
    Inventors: Roman IVANOV, Cheng-Yuan KO, Fred SUN
  • Patent number: 9631122
    Abstract: Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: April 25, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Kevin Dockery, Helin Huang, Lin Fu
  • Patent number: 9633863
    Abstract: The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, preferably comprises about 0.01 to about 2 percent by weight of at least one particulate ceria abrasive, about 10 to about 1000 ppm of at least one non-polymeric unsaturated nitrogen heterocycle compound, 0 to about 1000 ppm of at least one cationic polymer, optionally, 0 to about 2000 ppm of at least one polyoxyalkylene polymer, and an aqueous carrier therefor. The cationic polymer preferably is selected from a poly(vinylpyridine) polymer, a quaternary ammonium-substituted acrylate polymer, a quaternary ammonium-substituted methacrylate polymer, or a combination thereof. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 25, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventor: William Ward
  • Patent number: 9617450
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: April 11, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Shoutian Li, William Ward, Pankaj Singh, Jeffrey Dysard
  • Patent number: 9597768
    Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: March 21, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Prativa Pandey, Juyeon Chang, Brian Reiss
  • Patent number: 9567491
    Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: February 14, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Steven Grumbine, Jeffrey Dysard, Tina Li
  • Patent number: 9566686
    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: February 14, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Lin Fu, William Ward, Glenn Whitener
  • Patent number: 9556363
    Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: January 31, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Steven Grumbine, Jeffrey Dysard, Wei Weng, Lei Liu, Alexei Leonov
  • Patent number: 9548211
    Abstract: The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method comprises abrading a surface of substrate with a polishing composition that comprises a particulate abrasive, at least one acidic buffering agent, and an aqueous carrier.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: January 17, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: William Ward, Timothy Johns
  • Patent number: 9534147
    Abstract: The invention provides a polishing composition that contains (a) ?-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: January 3, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hon Wu Lau, Selvaraj Palanisamy Chinnathambi, Ke Zhang
  • Patent number: 9528030
    Abstract: The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: December 27, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Kraft, Phillip W. Carter, Jason Seabold
  • Patent number: 9528031
    Abstract: Slurry composition and a method of substrate polishing used in chemical mechanical polishing (CMP). The present invention concerns a slurry composition containing a polishing agent and a water soluble polymer. The slurry composition contains a water soluble polymer that has a solubility parameter in the range of 9.0 to 14.0 and that may contain hetero atoms at a level sufficient to lower the polishing rate near the edges of the polished substrate defined as the region within 1 mm of the outer edge of the polished substrate to a level below the mean polishing rate of the polished substrate. The water soluble polymer may have a mean molecular weight in the range of 200 to about 3,000,000, and the mean molecular weight may be in the range of 200 to 110,000 if hetero atoms are present in the main-chain structure and the SP value is under 9.5.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: December 27, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hiroshi Kitamura, Tsuyoshi Masuda, Yoshiyuki Matsumura