Patents Assigned to Cabot Microelectronics Corporation
  • Tribo-chronoamperometry as a tool for CMP application
    Patent number: 7497938
    Abstract: The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a current, and determining the at least one electrochemical characteristic by analysis of the current as a function of time.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: March 3, 2009
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jian Zhang, Steven K. Grumbine, Phillip W. Carter
  • Chemical-mechanical polishing composition and method for using the same
    Patent number: 7485241
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
    Type: Grant
    Filed: September 11, 2003
    Date of Patent: February 3, 2009
    Assignee: Cabot Microelectronics Corporation
    Inventors: David J. Schroeder, Kevin J. Moeggenborg
  • METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC
    Publication number: 20090029633
    Abstract: A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.
    Type: Application
    Filed: September 26, 2008
    Publication date: January 29, 2009
    Applicant: Cabot Microelectronics Corporation
    Inventors: Phillip W. Carter, Timothy P. Johns
  • Compositions and methods for CMP of low-k-dielectric materials
    Patent number: 7456107
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: November 25, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jason Keleher, Daniel Woodland, Francesco De Rege Thesauro, Robert Medsker, Jason Aggio
  • Carbon nanotube-based electronic switch
    Patent number: 7456482
    Abstract: An improved microelectromechanical switch assembly comprises a linearly movable switch rod constrained via a switch bearing, the switch rod being actuated by electrostatic deflection. Movement of the switch rod to one end of its travel puts the switch assembly in a closed state while movement of the switch rod to the other end of its travel puts the switch assembly in an open state. In an embodiment of the invention, one or both of the switch rod and the switch bearing are fabricated of a carbon nanotube. The improved microelectromechanical switch assembly provides low insertion loss and long lifetime in an embodiment of the invention.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: November 25, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Heinz H. Busta, Ian W. Wylie, Gary W. Snider
  • STACKED POLISHING PAD FOR HIGH TEMPERATURE APPLICATIONS
    Publication number: 20080274674
    Abstract: The invention provides a polishing pad for chemical-mechanical polishing comprising a polishing layer, a bottom layer, and a hot-melt adhesive, the hot-melt adhesive joining together the polishing layer and the bottom layer. The hot-melt adhesive comprises between about 2 and about 18 wt. % EVA and is substantially resistant to delamination when the polishing layer attains a temperature of about 40° C. The invention also provides a method of polishing a substrate with the aforementioned polishing pad, as well as a method of preparing such a polishing pad.
    Type: Application
    Filed: May 3, 2007
    Publication date: November 6, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Abaneshwar Prasad, Michael Lacy, Roland Sevilla, Kelly Newell
  • Decontamination and sterilization system using large area x-ray source
    Patent number: 7447298
    Abstract: A novel x-ray treatment system utilizes one or more large area flat panel sources of x-ray radiation directed into a target zone. A target substance within the target zone is irradiated with x-ray radiation from the one or more flat panel sources, reducing the biological effects of a contaminant presence therein. The flat panel source comprises an electron source, an electron accelerator, and an electron target medium. The electron source may emit electrons either via field emission or thermionic emission. The x-ray source may operate in transmissive, reflective, or combined transmissive/reflective mode. The use of large area flat panel x-ray sources in the inventive systems allows for decreased installation and operational costs as well as increased efficiency.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: November 4, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Heinz H. Busta, Stanley D. Lesiak
  • Method of polishing a silicon-containing dielectric
    Patent number: 7442645
    Abstract: The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The inventive chemical-mechanical polishing system comprises (a) ceria, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing system has a pH of about 4 to about 6.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: October 28, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip W. Carter, Timothy P. Johns
  • Multi-layer polishing pad material for CMP
    Patent number: 7435161
    Abstract: The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a porous polishing layer and a porous bottom layer, wherein the bottom layer is substantially coextensive with the polishing layer, the polishing layer being joined to the bottom layer without the use of an adhesive; the polishing layer having an average surface roughness, Ra, that is greater than the Ra of the bottom layer.
    Type: Grant
    Filed: April 25, 2005
    Date of Patent: October 14, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Abaneshwar Prasad, Michael S. Lacy
  • Transparent microporous materials for CMP
    Patent number: 7435165
    Abstract: The invention is directed to a chemical-mechanical polishing pad substrate comprising a porous material having an average pore size of about 0.01 microns to about 1 micron. The polishing pad substrate has a light transmittance of about 10% or more at at least one wavelength of about 200 nm to about 35,000 nm. The invention is further directed to a polishing pad comprising the polishing pad substrate, a method of polishing comprising the use of the polishing pad substrate, and a chemical-mechanical apparatus comprising the polishing pad substrate.
    Type: Grant
    Filed: October 28, 2002
    Date of Patent: October 14, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventor: Abaneshwar Prasad
  • Silicon oxide polishing method utilizing colloidal silica
    Publication number: 20080220610
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles.
    Type: Application
    Filed: June 29, 2006
    Publication date: September 11, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Benjamin Bayer, Zhan Chen, Jeffrey P. Chamberlain, Robert Vacassy
  • DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT
    Publication number: 20080203059
    Abstract: The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.
    Type: Application
    Filed: February 27, 2007
    Publication date: August 28, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Francesco De Rege Thesauro, Jason Keleher
  • SILICON CARBIDE POLISHING METHOD UTILIZING WATER-SOLUBLE OXIDIZERS
    Publication number: 20080153293
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
    Type: Application
    Filed: March 5, 2008
    Publication date: June 26, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Mukesh Desai, Kevin Moeggenborg, Phillip Carter
  • SILICON CARBIDE POLISHING METHOD UTILIZING WATER-SOLUBLE OXIDIZERS
    Publication number: 20080153292
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
    Type: Application
    Filed: March 5, 2008
    Publication date: June 26, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Michael White, Lamon Jones, Jeffrey Gilliland, Kevin Moeggenborg
  • Compositions for polishing aluminum/copper and titanium in damascene structures
    Publication number: 20080134585
    Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
    Type: Application
    Filed: December 6, 2006
    Publication date: June 12, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Renjie Zhou, Paul Feeney, Christopher Thompson
  • Chemical mechanical polishing slurry useful for copper substrates
    Patent number: 7381648
    Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.
    Type: Grant
    Filed: July 9, 2003
    Date of Patent: June 3, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
  • Composition and method for damascene CMP
    Publication number: 20080113589
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.
    Type: Application
    Filed: November 13, 2006
    Publication date: May 15, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Paul Feeney, Sriram Anjur, Jeffrey Dysard
  • CMP of copper/ruthenium/tantalum substrates
    Publication number: 20080105652
    Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is about 6 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
    Type: Application
    Filed: November 2, 2006
    Publication date: May 8, 2008
    Applicant: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Renjie Zhou, Christopher C. Thompson, Paul M. Feeney
  • Gold CMP composition and method
    Patent number: 7368066
    Abstract: The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: May 6, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Renjie Zhou, Christopher Thompson
  • System for the preferential removal of silicon oxide
    Patent number: 7365013
    Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: April 29, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian L. Mueller, Jeffery P. Chamberlain, David J. Schroeder