Patents Assigned to Cabot Microelectronics Corporation
  • POLISHING PAD WITH LIGHT-STABLE LIGHT-TRANSMITTING REGION
    Publication number: 20130273813
    Abstract: The invention provides a polishing pad that contains at least one light-transmitting region and optionally a polishing pad body. The light-transmitting region is composed of a material comprising (a) a polymeric resin and (b) at least one light-absorbing compound, and the light-transmitting region has a total light transmittance of about 25% or more at one or more wavelengths in a range of 250 nm to 395 nm.
    Type: Application
    Filed: April 11, 2012
    Publication date: October 17, 2013
    Applicant: CABOT MICROELECTRONICS CORPORATION
    Inventor: Abaneshwar Prasad
  • Polishing composition for nickel phosphorous memory disks
    Patent number: 8557137
    Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: October 15, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Haresh Siriwardane
  • Iodate-containing chemical-mechanical polishing compositions and methods
    Patent number: 8551202
    Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing C4-20 heterocycle and a C1-20 alkylamine, and a liquid carrier comprising water.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: October 8, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shoutian Li, Phillip W. Carter, Jian Zhang
  • CMP compositions containing a soluble peroxometalate complex and methods of use thereof
    Patent number: 8541310
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.
    Type: Grant
    Filed: May 4, 2007
    Date of Patent: September 24, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John Parker
  • CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
    Publication number: 20130244433
    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
    Type: Application
    Filed: March 13, 2013
    Publication date: September 19, 2013
    Applicant: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Glenn Whitener
  • POLISHING PAD COMPRISING TRANSMISSIVE REGION
    Publication number: 20130237136
    Abstract: The invention provides a polishing pad comprising an optically transmissive region, wherein the polishing pad comprises a polishing pad body comprising an opaque first region and an optically transmissive second region, wherein the second region has at least one recess formed therein of at least one part of the polishrag pad body, and at least one translucent window insert is integrated into the at least one recessed area. The polishing pad body and the at least one translucent window insert comprise different porous. materials.
    Type: Application
    Filed: November 18, 2011
    Publication date: September 12, 2013
    Applicant: Cabot Microelectronics Corporation
    Inventors: Kelly Newell, Abaneshwar Prasad
  • Compositions for CMP of semiconductor materials
    Patent number: 8529680
    Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: September 10, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Francesco De Rege Thesauro, Steven Grumbine, Phillip Carter, Shoutian Li, Jian Zhang, David Schroeder, Ming-Shih Tsai
  • METHOD FOR POLISHING ALUMINUM/COPPER AND TITANIUM IN DAMASCENE STRUCTURES
    Publication number: 20130224955
    Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an ?-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.
    Type: Application
    Filed: March 18, 2013
    Publication date: August 29, 2013
    Applicant: Cabot Microelectronics Corporation
    Inventor: Cabot Microelectronics Corporation
  • Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks
    Patent number: 8518135
    Abstract: The invention provides a polishing composition that contains (a) an abrasive comprising (i) first alpha alumina particles that have an average aspect ratio of 0.8:1 to 1.2:1, (ii) second alpha alumina that have an average aspect ratio of greater than 1.2:1, (iii) fumed alumina particles, and (iv) wet-process silica particles, and (b) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: August 27, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Rujee Lorpitthaya, Selvaraj Palanisamy Chinnathambi, Haresh Siriwardane
  • Oxidation-stabilized CMP compositions and methods
    Patent number: 8497209
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: July 30, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven K. Grumbine, Renjie Zhou, Zhan Chen, Phillip W. Carter
  • Method of polishing a silicon-containing dielectric
    Patent number: 8486169
    Abstract: A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: July 16, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip W. Carter, Timothy P. Johns
  • CMP sensor and control system
    Patent number: 8460507
    Abstract: Chemical-mechanical polishing (CMP) systems comprising apparatus and methods which allow the physical and chemical characteristics of a CMP slurry to be monitored during the polishing process, both on the pad and in the fresh slurry, are provided. The methods and apparatus of the invention also furnish the CMP operator with real-time information about the polishing process, which can provide insight into various chemical and physical mechanisms involved in chemical-mechanical polishing. The data provided by the sensors also make available valuable information about the stability and reproducibility of the particular CMP process being observed.
    Type: Grant
    Filed: September 3, 2008
    Date of Patent: June 11, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Clifford Spiro, Edward Remsen, Thomas Werts
  • Metal-passivating CMP compositions and methods
    Patent number: 8435421
    Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.
    Type: Grant
    Filed: January 11, 2011
    Date of Patent: May 7, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jason Keleher, Pankaj Singh, Vlasta Brusic
  • Wire saw slurry recycling process
    Patent number: 8425639
    Abstract: The present invention provides a method of recycling a water-based wire saw cutting slurry waste fluid comprising abrasive particles and waste solids in a water-based carrier.
    Type: Grant
    Filed: June 1, 2009
    Date of Patent: April 23, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Gregory Gaudet, Steven Grumbine, Nevin Naguib, Francois Batllo
  • Compositions for polishing aluminum/copper and titanium in damascene structures
    Patent number: 8425797
    Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an ?-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: April 23, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Christopher Thompson, Jeffrey Dysard
  • Silicon polishing compositions with high rate and low defectivity
    Patent number: 8273142
    Abstract: The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: September 25, 2012
    Assignee: Cabot Microelectronics Corporation
    Inventors: Michael White, Richard Romine, Brian Reiss, Jeffrey Gilliland, Lamon Jones
  • Polishing slurry for aluminum and aluminum alloys
    Patent number: 8251777
    Abstract: The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: August 28, 2012
    Assignee: Cabot Microelectronics Corporation
    Inventors: Kevin Moeggenborg, John Clark, Jeffrey Gilliland, Stanley Lesiak, Susan Wilson, Vlasta Brusic
  • Barrier slurry for low-dielectrics
    Patent number: 8252687
    Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: August 28, 2012
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shoutian Li, Steven Grumbine, Jeffrey Dysard, Pankaj Singh
  • Polishing silicon carbide
    Patent number: 8247328
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising at least one layer of single crystal silicon carbide. The method utilizes a chemical-mechanical polishing composition comprising a liquid carrier, an abrasive, a catalyst comprising a transition metal composition, and an oxidizing agent.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: August 21, 2012
    Assignee: Cabot Microelectronics Corporation
    Inventors: Michael White, Lamon Jones, Jeffrey Gilliland
  • Method of polishing nickel-phosphorous
    Patent number: 8247326
    Abstract: The invention is directed to a method of chemically-mechanically polishing a surface of a substrate, comprising contacting a surface of a substrate comprising nickel-phosphorous with a chemical-mechanical polishing composition comprising wet-process silica, an agent that oxidizes nickel-phosphorous, and an aminopolycarboxylic acid, wherein the polishing composition has a pH of about 1 to about 5, and abrading at least a portion of the nickel-phosphorous to polish the substrate.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: August 21, 2012
    Assignee: Cabot Microelectronics Corporation
    Inventors: Venkataramanan Balasubramaniam, Ping-Ha Yeung