Patents Assigned to Cabot Microelectronics Corporation
  • Copper-passivating CMP compositions and methods
    Patent number: 7955520
    Abstract: The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: June 7, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, Jason Keleher, John Parker
  • Composition and method for planarizing surfaces
    Patent number: 7955519
    Abstract: The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % ?-alumina particles, wherein the ?-alumina particles have an average diameter of 200 nm or less, and 80% of the ?-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises ?-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0.1 to about 4.8, and water.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: June 7, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Yuchun Wang, Jason Aggio, Bin Lu, John Parker, Renjie Zhou
  • Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
    Patent number: 7922926
    Abstract: The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic acid, hydrogen peroxide, and water. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: January 8, 2008
    Date of Patent: April 12, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Ping-Ha Yeung, Brian Reiss
  • Compositions and methods for CMP of phase change alloys
    Patent number: 7897061
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
    Type: Grant
    Filed: January 29, 2007
    Date of Patent: March 1, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jeffrey Dysard, Paul Feeney, Sriram Anjur
  • Method and apparatus for measurement of magnetic permeability of a material
    Patent number: 7888929
    Abstract: A system for determining magnetic permeability of a material. Two electrical inductors formed as primary and secondary concentric coils share a common magnetic core space. A first AC voltage applied to the primary coil creates a magnetic flux in the core proportional to the magnetic permeability of the material. The magnetic flux induces an AC voltage in the secondary coil indicative of the apparent magnetic permeability of the sample. The apparent permeability is corrected for conductivity by imposing a second AC voltage and resistor in series across first and second electrodes disposed in the material. When the material is a magnetorheological fluid, the magnetic permeability is proportional to the concentration of magnetic particles in the sample and can be back-calculated from the amplitude of the secondary voltage signal.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: February 15, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: William Kordonski, Arpad Sekeres, Robert James
  • Method of operating and process for fabricating an electron source
    Patent number: 7875469
    Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: January 25, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventor: Heinz H. Busta
  • Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
    Patent number: 7846842
    Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: December 7, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip W. Carter, Timothy Johns
  • Composition and method for damascene CMP
    Patent number: 7837888
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.
    Type: Grant
    Filed: November 13, 2006
    Date of Patent: November 23, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul M. Feeney, Sriram Anjur, Jeffrey M. Dysard
  • Halide anions for metal removal rate control
    Patent number: 7820067
    Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: October 26, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventor: Shoutian Li
  • Compositions and methods for CMP of semiconductor materials
    Patent number: 7803203
    Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: September 28, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Francesco De Rege Thesauro, Steven Grumbine, Phillip Carter, Shoutian Li, Jian Zhang, David Schroeder, Ming-Shih Tsai
  • Low pH barrier slurry based on titanium dioxide
    Patent number: 7803711
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of about 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.24 ?, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.51 ?, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: September 28, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John C. Parker
  • CMP system utilizing halogen adduct
    Patent number: 7776230
    Abstract: The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.01 mM or more in the aqueous carrier. The invention also provides a method of polishing a substrate comprising (i) providing the aforementioned chemical-mechanical polishing system, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: August 17, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Francesco De Rege Thesauro
  • POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS MEMORY DISKS
    Publication number: 20100193470
    Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Application
    Filed: February 3, 2009
    Publication date: August 5, 2010
    Applicant: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Haresh Siriwardane
  • Chemical-mechanical polishing composition and method for using the same
    Patent number: 7754098
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: July 13, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: David J. Schroeder, Kevin J. Moeggenborg
  • Oxidation-stabilized CMP compositions and methods
    Patent number: 7732393
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: June 8, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven K. Grumbine, Renjie Zhou, Zhan Chen, Phillip W. Carter
  • CMP porous pad with component-filled pores
    Patent number: 7699684
    Abstract: This invention provides a method for polishing pad comprising a polymeric material having pores and a component that is disposed within the pores.
    Type: Grant
    Filed: March 26, 2007
    Date of Patent: April 20, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventor: Abaneshwar Prasad
  • Method of preparing a conductive film
    Patent number: 7686994
    Abstract: The invention provides a method for producing a conductive film that generates an electric current via field emission of electrons, which method comprises incorporating an electrically conductive material into a thermoplastic polymer. The invention also provides a conductive film and a method for generating an electric current via field emission of electrons.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: March 30, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Abaneshwar Prasad, Ronald E. Myers
  • Silicon carbide polishing method utilizing water-soluble oxidizers
    Patent number: 7678700
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: March 16, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Mukesh Desai, Kevin Moeggenborg, Phillip Carter
  • Compositions and methods for dielectric CMP
    Patent number: 7677956
    Abstract: The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: March 16, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip Carter, Gregory H Bogush, Farhana Khan, Timothy P Johns, Robert Vacassy
  • Polishing pad carrier
    Patent number: D640057
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: June 21, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventor: Catherine Conroy