Abstract: There is provided a method for determining residual errors, compromising the following steps: in a first step, a test plate comprising a first pattern is used, and in a second step, a test plate comprising a second pattern which is reflected and/or rotated with respect to the first step is used.

Abstract: There is provided an autofocus device for an imaging device which has an imaging lens system with a first focal plane, an object stage for holding an object, and a first movement module for the relative movement of object stage and imaging lens system. The autofocus device comprises an image-recording module with a second focal plane, a second movement module for the relative movement of object stage and image-recording module, and a control module which controls the image-recording module for focusing the imaging device. The control module controls the first movement module such that evaluated change in distance between the object stage and the imaging lens system is carried out, and controls the second movement module such that, during the first exposure time for recording the first two-dimensional image, the object stage is moved relative to the image-recording module in a plane parallel to the second focal plane.

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

Abstract: A method is provided for determining the position of a structure on a carrier, relative to a reference point of the carrier, said method comprising the steps of: a) providing an image including a reference structure; b) recording an image of the structure on the carrier by means of a recording device, with a known recording position relative to the reference points; c) superimposing the two images to form one superimposed image; d) determining the image distance of the two structures in the superimposed image; e) shifting the two structures in the superimposed image relative to one another, depending on the determined image distance; f) checking whether the determined image distance is below a predetermined maximum value; wherein, if the image distance is below the maximum value, the method is continued in step g), and, if the image distance is not below the maximum value, steps d)-f) are repeated, taking into account the determined image distance/distances: g) determining the position of the structure relati

Abstract: The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

Abstract: The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.

Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.

Abstract: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

Abstract: A method is provided for determining the relative overlay shift of stacked layers, said method comprising the steps of: a) providing a reference image including a reference pattern that comprises first and second pattern elements; b) providing a measurement image of a measurement pattern, which comprises a first pattern element formed by a first one of the layers and a second pattern element formed by a second one of the layers; c) weighting the reference or measurement image such that a weighted first image is generated, in which the first pattern element is emphasized relative to the second pattern element; d) determining the relative shift of the first pattern element on the basis of the weighted first image and of the measurement or reference image not weighted in step c); e) weighting the reference or measurement image such that a weighted second image is generated, in which the second pattern element is emphasized relative to the first pattern element; f) determining the relative shift of the second pat

Abstract: A device for measuring lithography masks is provided, comprising a reticle carrier for the lithography mask to be measured, a measurement objective for reproducing on a detector a section of said lithography mask held by said reticle carrier, a measurement module for measuring the position of said reticle carrier relative to said measurement objective, and a correction module by means of which said reticle carrier can be moved in order to bring it into a predetermined position relative to said measurement objective, wherein said measurement objective and said measurement module are fastened directly to an instrument carrier in a locally fixed manner.

Abstract: An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

Abstract: A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures.

Abstract: During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88) that is optically conjugate with respect to the object plane.

Abstract: A method is provided for determining the position of a first structure (8a) relative to a second structure (8b) or a part thereof, said method having the steps of: a) providing a first picture (F1) having a multiplicity of pixels and which contains the first structure, b) providing a second picture (F2) having a multiplicity of pixels and which contains the second structure, c) forming an optimization function with the displacement of the two pictures relative to one another as parameter, the optimization function overlying the two pictures and masking the overlay such that in a determination of an extreme value of the optimization function a contribution is made only by the region of the overlay that corresponds to the second structure or the part thereof, d) ascertaining the extreme value of the optimization function and determining the optimal value of the displacement based on the extreme value of the optimization function, and e) determining the position of the first structure relative to the second stru

Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411?), and an inner pole piece (412) having a lowermost end (412?) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

Abstract: The invention relates to a method for measuring structures on masks (1) for photolithography, wherein firstly the mask (1) is mounted on a spatially movable platform (2). The position of the platform (2) is controlled in this case. The structure on the mask (1) is illuminated with illumination light from an illumination light source which emits coherent light. The light coming from the mask (1) is imaged onto a detection device (6) by an imaging optical unit (4) and detected. The detected signals are evaluated in an evaluation device (7) and the positions and dimensions of the structures are determined. The invention also relates to an apparatus by which these method steps, in particular, can be carried out. In this case, the accuracy of the position and dimension determination is increased by the properties of the illumination light being coordinated with the structure to be measured.

Abstract: A charged particle beam exposure system has a blanking aperture array (31) having groups of apertures (53) controlled by shift registers (75), wherein different inputs (C) to the shift registers influence a different number of apertures. Charged particle beamlets traversing the apertures are scanned across a charged particle sensitive substrate in synchronism with a clock signal of the shift registers.

Abstract: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Abstract: An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.