Abstract: The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter.

Abstract: The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate (90), storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate (90).

Abstract: The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas

Abstract: The invention relates to a method for electron beam induced etching of a layer contaminated with gallium (120), (220) with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer (120), (220) and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.

Abstract: During mask inspection predominantly defects of interest which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. A further form of mask inspection microscopes serves for measuring the reticles and is also referred to as a registration tool. The illumination is used by the stated conventional and abaxial illumination settings for optimizing the contrast. The accuracy of the registration measurement is thus increased. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope.

Abstract: A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

Abstract: A device and method for the interferometric measurement of phase masks, particularly from lithography. Radiation passing through a coherence mask is brought to interference by a diffraction grating. A phase mask is arranged in or near the pupil plane of the first imaging optics which can be positioned exactly in the x-y direction by which interferograms are generated which are phase-shifted in the x-y direction by translational displacement of the coherence mask or of the diffraction grating. The interferograms are imaged onto the spatially resolving detector by second imaging optic and the phase and transmission functions of the phase mask are determined by an evaluation unit. The invention can, of course, generally be applied to planar phase objects, such as biological structures, for example, points of establishment with respect to an interference microscope.

Abstract: A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

Abstract: The invention is directed to a method for determining the image quality of an optical imaging system and to the use of the method according to the invention for determining the influence of samples on the amplitude distribution and phase front distribution of the illumination light, of which the amplitude distribution is known in particular.

Abstract: The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.

Abstract: A method for verifying repairs on masks for photolithography is provided. A mask fabricated based on a mask layout is inspected for defects, and the positions at which defects are found on the mask are stored in a position file. In a repair step, the defects are repaired and, for each repaired position, in a verification step, an aerial image of the mask is taken at that position and the aerial image is analyzed to determine whether at that position the mask meets tolerance criteria established for one or more selected target parameters, and if the tolerance criteria have been met, the repair is verified. The verification can include a) based on the position file, a desired structure is defined in the mask layout at the repaired position, b) an aerial image is simulated for the desired structure, c) the captured aerial image is compared with the simulated one, and d) based on the comparison, a decision is made as to whether the repair at that position is verified.

Abstract: The position of an edge of a marker structure in an image of the marker structure is determined with subpixel accuracy. A discrete intensity profile of the edge, having profile pixels, is derived from the image pixels, and a continuous profile function of the edge is determined based on the profile pixels. Profile pixels whose intensity values are near an intensity threshold value are selected as evaluation pixels. Based on the evaluation pixels, a curve of continuous intensity is calculated. A position coordinate at which the intensity value of the continuous intensity curve matches the threshold value is selected as a first position coordinate, and the distance is determined between the first position coordinate and the position coordinate of the evaluation pixel that, from among the evaluation pixels previously selected, has the closest intensity value to the threshold value.

Abstract: A method for calibrating a specimen stage of a metrology system is provided, in which a specimen that has multiple marks is positioned successively in different calibration positions, each mark is positioned in the photography range of an optical system by means of the specimen stage in each calibration position of the specimen, and the mark position is measured using the optical system. A model is set up that describes positioning errors of the specimen stage using a system of functions having calibration parameters to be determined. The model takes into consideration at least one systematic measurement error that occurs during the measurement of the mark positions. The values of the calibration parameters are determined based on the model with consideration of the measured mark positions.

Abstract: There is provided a method for determining residual errors, compromising the following steps: in a first step, a test plate comprising a first pattern is used, and in a second step, a test plate comprising a second pattern which is reflected and/or rotated with respect to the first step is used.

Abstract: An endoscope device in which endoscope images and patient information can be recorded in a removable storage medium and in which the endoscope images and patient information recorded in the storage medium can be reproduced. The endoscope device has a selection means for reproducing the endoscope images in a list form and selecting at least one endoscope image from the reproduced list; a display means for inputting additional information other than the patient information, adding the additional information to the endoscope image selected by the selection means, and displaying the result; and a recording/reproduction means for recording the selected endoscope image and the additional information in the storage medium or reproducing the image and the information.

Abstract: A method for analyzing the imaging behavior of a first optical imaging element, in which an object is imaged by a second optical imaging element and light in the image plane is detected in a spatially resolved manner. The two optical imaging elements differ in at least one imaging characteristic. Values are determined for intensity and at least one second characteristic and then stored in image points, and processed in an emulation step. An emulation image is produced, taking into account the influence of the second characteristic. A series of images is produced by dividing a range of values of the second characteristic into subdomains, associating an image with each subdomain, and associating the corresponding intensity value with the image points of each image, in case the value of the second characteristic, associated with the image point, falls in the subdomain associated with the respective image.

Abstract: A charged particle beam exposure system has a blanking aperture array (31) having groups of apertures (53) controlled by shift registers (75), wherein different inputs (C) to the shift registers influence a different number of apertures. Charged particle beamlets traversing the apertures are scanned across a charged particle sensitive substrate in synchronism with a clock signal of the shift registers.

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.