Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems is provided. The imaging system for emulating high-aperture scanner systems includes imaging optics, a detector and an evaluating unit, wherein at least one polarization-active optical element is arranged as desired in the imaging beam path for selection of different polarization components of the imaging beam, an optical element with intensity attenuation function can be introduced in the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract: Apparatus for inspecting objects especially masks in microlithography that are disposed in a vacuum chamber. The apparatus includes a converter for converting illuminating radiation emitted from the object into a radiation of a higher wavelength. A sensor for recording images is disposed outside the vacuum chamber and arranged as an optical interface from the vacuum chamber to the sensor of the converter or at least one part of an image lens is arranged as a window in the vacuum chamber.

Abstract: The invention relates to a method for analyzing the imaging behavior of a first optical imaging element, whereby an object is imaged into an image plane by a second optical imaging element and light in the image plane is detected in a spatially resolved manner, the two optical imaging elements differing in terms of at least one imaging characteristic. Values are determined for the intensity and for at least one second characteristic of the light, said values being then stored in image points, and processed in an emulation step. An emulation image is produced, emulating the imaging of the object by the first optical imaging element, taking into account the influence of the second characteristic.

Abstract: The invention includes an optics array for beam shaping, which uses a micro lens combination, whose polygonal micro lenses are arranged in a level, whereby the geometric arrangement of the individual lenses and their diameters follow a distribution pattern. It is characterized by the fact that the number of corners as well as the length of the lens rims of each of the individual lenses of the micro lens combination is defined by a point distribution (P) of Voronoi points (2), which define a Voronoi Region (VR(p)) which can be described by the following equations for a Voronoi lens (1).

Abstract: A device and method for the interferometric measurement of phase masks, particularly from lithography. Radiation passing through a coherence mask is brought to interference by a diffraction grating. A phase mask is arranged in or near the pupil plane of the first imaging optics which can be positioned exactly in the x-y direction by which interferograms are generated which are phase-shifted in the x-y direction by translational displacement of the coherence mask or of the diffraction grating. The interferograms are imaged onto the spatially resolving detector by second imaging optic and the phase and transmission functions of the phase mask are determined by an evaluation unit. The invention can, of course, generally be applied to planar phase objects, such as biological structures, for example, points of establishment with respect to an interference microscope.

Abstract: A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411?), and an inner pole piece (412) having a lowermost end (412?) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

Abstract: In a pattern definition device for use in a particle-beam exposure apparatus a plurality of blanking openings (910) are arranged within a pattern definition field (bf) composed of a plurality of staggered lines (bl) of blanking openings, each provided with a deflection means controllable by a blanking signal (911); for the lines of blanking openings, according to a partition of the blanking openings of a line into several groups (g4,g5,g6), the deflection means of the blanking openings of each group are fed a common group blanking signal (911), and the group blanking signal of each group of a line is fed to the blanking means and connected to the respective blanking openings independently of the group blanking signals of the other groups of the same line.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.