Abstract: A system inspects, modifies or analyzes a region of interest of a sample via charged particles. A detector device of the system produces a pixel image having horizontal and vertical pixel resolutions. A charged particle deflection device produces a scanning charged particle beam in a scanning region. The deflection device has horizontal and vertical deflection units controlled by a digital to analog converter having a digital resolution larger than the horizontal pixel resolution and/or the vertical pixel resolution. An operator control interface of the system selects an assignment between respective image pixels of a desired pixel image and digital inputs of the DAC to produce horizontal and/or vertical deflection signals to guide the charged particle beam to the location of the respective image pixel. A reliable image of a sample can be obtained even when there is zooming or panning within an accessible region of the sample.

Abstract: A method includes obtaining at least one 2-D image dataset of semiconductor structures formed on a wafer including one or more defects during a wafer run of a wafer using a predefined fabrication process. The method also includes determining, based on at least one machine-learning algorithm trained on prior knowledge of the fabrication process and based on the at least one 2-D image dataset, one or more process deviations of the wafer run from the predefined fabrication process as a root cause of the one or more defects. A 3-D image dataset may be determined as a hidden variable.

Abstract: A protective apparatus for lines between two components of a projection exposure apparatus for semiconductor lithography is firmly connected to the two components. the protective apparatus includes first and second partial regions which are configured to protect against mechanical damage to the lines. The first partial region is at least temporarily configured to mechanically decouple the first component from the second component.

Abstract: An imaging optical arrangement serves to image an object illuminated by X-rays. An imaging optics serves to image a transfer field in a field plane into a detection field in a detection plane. A layer of scintillator material is arranged at the transfer field. A stop is arranged in a pupil plane of the imaging optics. The imaging optics has an optical axis. A center of a stop opening of the stop is arranged at a decentering distance with respect to the optical axis. Such imaging optical arrangement ensures a high quality imaging of the object irrespective of a tilt of X-rays entering the transfer field. The imaging optical arrangement is part of a detection assembly further comprising a detection array and an object mount. Such detection assembly is part of a detection system further comprising a X-ray source.

Abstract: The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (?EUV) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Abstract: An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Abstract: A positioning system for moving or positioning a moveable object, the system including: a dynamic support system including a reaction mass, a first support, a first spring system to support the reaction mass from the first support, a second support, a second spring system to support the first support from the second support, and a damping system to provide damping to the dynamic support system; and an actuator for generating a driving force between the moveable object and the reaction mass for moving or position the object, wherein a first eigenfrequency and a second eigenfrequency of the dynamic support system are substantially the same.

Abstract: In order to reduce the degree of relaxation after an optical substrate has been compacted, in particular after a longer period, substrates (51) or reflective optical elements (50), in particular for EUV lithography, with substrates (51) of this type, are proposed. These substrates (51), which have a surface region (511) with a reflective coating (54), are characterised in that, at least near to the surface region (511), the titanium-doped quartz glass has a proportion of Si—O—O—Si bonds of at least 1*1016/cm3 and/or a proportion of Si—Si bonds of at least 1*1016/cm3 or, along a notional line (513) perpendicular to the surface region (511), over a length (517) of 500 nm or more, a hydrogen content of more than 5×1018 molecules/cm3.

Abstract: A method for the zonal polishing of a workpiece includes using a polishing tool to guide a structured polishing pad over the surface of workpiece to remove material from the workpiece. A structured polishing pad includes a structuring adapted to the movement of a polishing tool.

Abstract: A method for forming in particular reflection-reducing nanostructures (5) on a preferably polished surface (3) of a crystalline, in particular ionic, substrate (1) for transmission of radiation in the FUV/VUV wavelength range. The method includes: providing a surface (3, 7), which surface is not oriented along a lattice plane having a minimum surface energy, on the substrate (1) or on a layer (6) applied to the substrate (1) by a coating method, in particular vacuum vapor deposition, and introducing an energy input (E) into the surface (7) for rearranging the surface (7) to form the nanostructures (5), wherein the energy input (E) is generated by irradiating the surface (7) with electromagnetic radiation (4). Also, an optical element for transmission of radiation in the FUV/VUV wavelength range.

Abstract: The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.

Abstract: The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.

Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Abstract: The invention relates to an autofocusing method for an imaging device (for semiconductor lithography) comprising an imaging optical unit, an object to be measured and an autofocusing device having a reflective illumination, comprising the following method steps: a) defining at least three basis measurement points M(xj, yj) on a surface of the object, b) determining the deviation Az(M)j of a nominal position of the surface of the object from the focal plane of the autofocusing device at the defined basis measurement points M(xj, yj), c) storing the deviations Az(M)j from at least three basis measurement points M(xj, yj), d) using the stored deviation Az(M)j for determining a deviation Az(P)k at an arbitrary point P(xk, Yk) of the surface, and e) using the deviation Az(P)k for focusing onto the point P(xk, Yk).

Abstract: An electro-optical circuit board can provide probe card functionality. The electro-optical circuit board includes at least one electrical conductor track and at least one optical beam path.

Abstract: An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%.

Abstract: A method for acquiring a 3D image of a sample structure includes acquiring a first raw 2D set of 2D images of a sample structure at a limited number of raw sample planes; calculating a 3D image of the sample structure represented by a 3D volumetric image data set; and extracting a measurement parameter from the 3D volumetric image data set. A further number of interleaving 2D image acquisitions are recorded at a further number of interleaved sample planes which do not coincide with previous acquisition sample planes. The steps “calculating,” “extracting” and “assigning” are repeated for the further interleaving 2D set until convergence or a maximum number of 2D image acquisitions is recorded. A projection system used for such method comprises a projection light source, a rotatable sample structure holder and a spatially resolving detector. Such method can also be used to acquire virtual tomographic images of a sample.

Abstract: A method for the tracking and identification of components of lithography systems, for example of projection exposure apparatuses for semiconductor lithography is provided. The components are each provided with at least one transponder. The transponder has a data memory, on which data relating to the respective component are stored. The transponder is configured to pick up wirelessly arriving signals of a reader and to respond with data from the data memory. The data are stored on the data memory during the production of the component and/or during the production of the lithography system and/or after the start-up of the lithography system.

Abstract: Methods for characterizing the surface shapes of optical elements include the following steps: carrying out, in an interferometric test arrangement, at least a first interferogram measurement on the optical element by superimposing a test wave, which has been generated by diffraction of electromagnetic radiation on a diffractive element and has been reflected at the optical element, carrying out at least one additional interferogram measurement on in each case one calibrating mirror for determining calibration corrections, and determining the deviation from the target shape of the optical element based on the first interferogram measurement carried out on the optical element and the determined calibration corrections. At least two interferogram measurements are carried out for the at least one calibrating mirror, which differ from one another with regard to the polarization state of the electromagnetic radiation.

Abstract: A metrology system includes a first beam analysis system for analyzing at least one first measurement beam that was coupled from the excitation laser beam before a reflection on the target material and a second beam analysis system for analyzing at least one second measurement beam that was coupled from the excitation laser beam after a reflection on the target material. Each of the first beam analysis system and the second beam analysis system has at least one wavefront sensor system.