Abstract: In a method for characterizing the surface shape, the following steps are carried out iteratively: (A) calculating a first figure based on first measurements; (B) subtracting the first figure from first measured values, to determine a first test set-up error; (C) using the first test set-up error for calculating a corrected first figure,; (D) subtracting the corrected first figure from second measured values, to determine a second test set-up error; (E) using the second test set-up error for calculating a corrected second figure; (F) using the corrected second figure for correcting the first test set-up error by subtracting the corrected second figure from the first measured values, to determine a corrected first test set-up error; (G) using the corrected first test set-up error for calculating a first figure corrected once again; and (H) comparing the result with a convergence criterion and optionally repeating steps (A) to (H).

Abstract: The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.

Abstract: An insert for a source chamber of an EUV radiation source has a pressure stage and, spaced apart from it, a stop.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: A 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer includes obtaining a 3D tomographic image, and selecting a plurality of 2D cross section images. The method also includes identifying contours of HAR structures, and extracting deviation parameters. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.

Abstract: The disclosure relates to a damping arrangement for vibration damping of an element in an optical system, for example in a microlithographic projection exposure apparatus. A damping arrangement according to the disclosure has an element, a fluid located in a cavity, and at least one channel connected to the cavity. A vibration of the element causes vibration energy of the element to be dissipated by partial displacement of the fluid from the cavity into the at least one channel.

Abstract: In order to determine a production aerial image of an object to be measured as a result of an illumination and imaging with illumination and imaging conditions of an optical production system, firstly a measurement aerial image of the object to be measured is captured. This is carried out with illumination and imaging conditions of an optical measurement system, which conditions include a predefined measurement illumination setting. Data of the measurement aerial image are generated during the capturing. An object structure of the object to be measured is reconstructed from the data of the captured measurement aerial image by use of a reconstruction algorithm. Data of the reconstructed object structure are generated during the reconstructing. A production aerial image is simulated from the data of the reconstructed object structure with the illumination and imaging conditions of the optical production system.

Abstract: Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.

Abstract: A method for operating an EUV lithography apparatus (1) with at least one vacuum housing (27) for at least one reflective optical element (12) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface (12a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.

Abstract: A method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, includes the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.

Abstract: A mirror including a substrate (110), a reflection layer system (120), and at least one continuous piezoelectric layer (130, . . . ) arranged between the substrate and the layer system. An electric field producing a locally variable deformation is applied to the piezoelectric layer via a first, layer-system-side electrode arrangement and a second, substrate-side electrode arrangement. At least one of the electrode arrangements is assigned a mediator layer (170) setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The electrode arrangement to which the mediator layer is assigned has a plurality of electrodes (160, . . . ), each of which is configured to receive an electrical voltage relative to the respective other electrode arrangement. In the region that couples two respectively adjacent electrodes, the mediator layer is subdivided into a plurality of regions (171, . . . ) that are electrically insulated from one another.

Abstract: An EUV collector mirror has a reflection surface (16) to reflect usable EUV light which impinges on the reflection surface (16) from a source region (17) to a subsequent EUV optics. The reflection surface (16) carries a pump light grating structure (19) configured to retroreflect pump light (22) which impinges upon the pump light grating structure (19) from the source region (17) back to the source region (17). The pump light (22) has a wavelength deviating from the wavelength of the usable EUV light. Such EUV collector mirror enables a high conversion efficiency between the energy of pump light of a laser discharged produced plasma (LDPP) EUV light source on the one hand and the resulting usable EUV energy on the other.

Abstract: A drive device includes: a drive unit configured to apply a drive voltage to a capacitive actuator to set a position of a capacitive actuator; a source controllable by an excitation signal and coupled to the first node to feed a time-dependent AC current signal into the first node so that an AC voltage arises at the capacitive actuator due to a superposition of the drive voltage and an AC voltage corresponding to a product of the AC current signal and an impedance of the capacitive actuator; a filter unit connected configured to filter an output signal of the capacitive actuator; and a determining unit configured to determine an impedance behaviour of the capacitive actuator depending on the filtered output signal, the determining unit configured to output the excitation signal to drive the source.

Abstract: A method to detect a defect on a lithographic sample includes the following steps: detection light and a detector having at least one sensor pixel are provided. Further, a detection pattern is provided causing a light structure of the detection light being structured at least along one dimension (1D, x). The detection pattern is aligned such that the detector is aligned normal to an extension (xy) of the light structure. Further, a complimentary pattern is provided having a 1D structure which is complimentary to that of the detection pattern. The sample is moved relative to the detection pattern while gathering the detection light on the detector. Further, a reference sample without defects or with negligible defects is provided. The reference sample also is moved relative to the detection pattern while gathering the detection light on the detector. A defect (S1 to S4) localization on the sample is decoded by correlation using the complementary pattern.

Abstract: A system inspects, modifies or analyzes a region of interest of a sample via charged particles. A detector device of the system produces a pixel image having horizontal and vertical pixel resolutions. A charged particle deflection device produces a scanning charged particle beam in a scanning region. The deflection device has horizontal and vertical deflection units controlled by a digital to analog converter having a digital resolution larger than the horizontal pixel resolution and/or the vertical pixel resolution. An operator control interface of the system selects an assignment between respective image pixels of a desired pixel image and digital inputs of the DAC to produce horizontal and/or vertical deflection signals to guide the charged particle beam to the location of the respective image pixel. A reliable image of a sample can be obtained even when there is zooming or panning within an accessible region of the sample.

Abstract: An optical assembly of a microlithography imaging device comprises a holding device for holding an optical element. The holding device has a holding element having first and second interface sections. The first interface section for a first interface connecting the holding element and the optical element in an installed state. The second interface section forms a second interface connecting the holding element and a support unit in the installed state. The support unit connects the optical element to a support structure to support the optical element on the support structure via a supporting force. The holding device comprises an actuator device engaging on the holding element between the first and second interfaces. The actuator device acts on the holding element via a controller so that a specifiable interface deformation and/or a specifiable interface force distribution acting on the optical element is set on the first interface.

Abstract: A diffractive optical element (10) for a test interferometer (100) measures a shape of an optical surface (102). Diffractive shape measuring structures (16) are arranged on a used surface (14) of the element and generate a test wave (122) irradiating the surface when the element is arranged in the interferometer. At least one test field (18) several profile properties of test structures contained in the test field. The profile properties characterize a profile line of the test structures extending transversely with respect to the used surface and include a flank angle of the profile line, a profile depth and a depth of a microtrench in a bottom region of a trench-shaped profile of the test structures. The test field is arranged at one location of the used surface instead of the diffractive shape measuring structures such that the test field is surrounded by several diffractive shape measuring structures.

Abstract: A stop, such as a numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus, includes a light-transmissive aperture and a stop element, in which or at which the aperture is provided. The stop element is opaque and fluid-permeable outside the aperture.

Abstract: A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

Abstract: A method for producing a substrate (10) for an optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12). An associated reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate is typically produced in accordance with the associated method and has a quasi-monocrystalline volume region (8).