Abstract: An optical assembly of a microlithography imaging device comprises a holding device for holding an optical element. The holding device has a holding element having first and second interface sections. The first interface section for a first interface connecting the holding element and the optical element in an installed state. The second interface section forms a second interface connecting the holding element and a support unit in the installed state. The support unit connects the optical element to a support structure to support the optical element on the support structure via a supporting force. The holding device comprises an actuator device engaging on the holding element between the first and second interfaces. The actuator device acts on the holding element via a controller so that a specifiable interface deformation and/or a specifiable interface force distribution acting on the optical element is set on the first interface.

Abstract: A system inspects, modifies or analyzes a region of interest of a sample via charged particles. A detector device of the system produces a pixel image having horizontal and vertical pixel resolutions. A charged particle deflection device produces a scanning charged particle beam in a scanning region. The deflection device has horizontal and vertical deflection units controlled by a digital to analog converter having a digital resolution larger than the horizontal pixel resolution and/or the vertical pixel resolution. An operator control interface of the system selects an assignment between respective image pixels of a desired pixel image and digital inputs of the DAC to produce horizontal and/or vertical deflection signals to guide the charged particle beam to the location of the respective image pixel. A reliable image of a sample can be obtained even when there is zooming or panning within an accessible region of the sample.

Abstract: A method to detect a defect on a lithographic sample includes the following steps: detection light and a detector having at least one sensor pixel are provided. Further, a detection pattern is provided causing a light structure of the detection light being structured at least along one dimension (1D, x). The detection pattern is aligned such that the detector is aligned normal to an extension (xy) of the light structure. Further, a complimentary pattern is provided having a 1D structure which is complimentary to that of the detection pattern. The sample is moved relative to the detection pattern while gathering the detection light on the detector. Further, a reference sample without defects or with negligible defects is provided. The reference sample also is moved relative to the detection pattern while gathering the detection light on the detector. A defect (S1 to S4) localization on the sample is decoded by correlation using the complementary pattern.

Abstract: A diffractive optical element (10) for a test interferometer (100) measures a shape of an optical surface (102). Diffractive shape measuring structures (16) are arranged on a used surface (14) of the element and generate a test wave (122) irradiating the surface when the element is arranged in the interferometer. At least one test field (18) several profile properties of test structures contained in the test field. The profile properties characterize a profile line of the test structures extending transversely with respect to the used surface and include a flank angle of the profile line, a profile depth and a depth of a microtrench in a bottom region of a trench-shaped profile of the test structures. The test field is arranged at one location of the used surface instead of the diffractive shape measuring structures such that the test field is surrounded by several diffractive shape measuring structures.

Abstract: A stop, such as a numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus, includes a light-transmissive aperture and a stop element, in which or at which the aperture is provided. The stop element is opaque and fluid-permeable outside the aperture.

Abstract: A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

Abstract: A method for producing a substrate (10) for an optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12). An associated reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate is typically produced in accordance with the associated method and has a quasi-monocrystalline volume region (8).

Abstract: To measure an effect of a wavelength-dependent measuring light reflectivity RRet of a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity RRet, or an effect of the wavelength-dependent reflectivity RRet is determined on the basis of the capture results.

Abstract: A micro-tooling device, such as, for example, a scanning electron microscope or a focused-ion beam microscope, provides images. A first machine-learning algorithm and a second machine-learning algorithm are sequentially coupled. The first machine-learning algorithm determines a progress along a predefined workflow based on feature recognition in images associated with the workflow. The second machine-learning algorithm predicts settings of operational parameters of the micro-tooling device in accordance with the progress along the predefined workflow.

Abstract: A method includes obtaining an image data set that depicts semiconductor components, and applying a hierarchical bricking to the image data set. In this case, the bricking includes a plurality of bricks on a plurality of hierarchical levels. The bricks on different hierarchical levels have different image element sizes of corresponding image elements.

Abstract: An actuator device aligns an optical element of a projection exposure apparatus. The actuator device includes a shaft. The first end portion of the shaft is deflectably suspended from a base point of a supporting structure by way of a joint. The second end portion of the shaft is fixed on the optical element. At least one actuator unit has a translator fixed on the shaft and a stator mechanically connected to the supporting structure to apply a deflection force to the shaft to radially deflect the shaft from a middle position.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: A method for generating a mathematical model (MM) for positioning individual mirrors (204, 204?) of a facet mirror (200) in an optical system (500), e.g. in a lithography apparatus (100A, 100B). The method includes: a) providing (S701) target positions (SP) of the individual mirrors (204, 204?) with an adjustment unit (502), b) capturing (S702) actual measurement positions (MI) of the individual mirrors (204, 204?) with a measuring device (508), which is embodied as an interferometer, deflectometer and/or camera, and c) generating (S705) a mathematical model (MM) for positioning the individual mirrors (204, 204?) based on the captured actual measurement positions (MI) and the target positions (SP). In step c), a difference (EA) is formed (S703) between a respective actual measurement position (MI) and a respective target position (SP) and the mathematical model (MM) is generated (S705) based on the difference (EA) formed.

Abstract: An optical measuring system is used to reproduce a target wavefront of an imaging optical production system when an object is illuminated with illumination light. The optical measuring system comprises an object holder displaceable by actuator means and at least one optical component displaceable by actuator means. Within the scope of the target wavefront reproduction, a starting actuator position set (X0), in which each actuator is assigned a starting actuator position, is initially specified. An expected design wavefront (WD) which approximates the target wavefront and which the optical measuring system produces as a set wavefront is determined. A coarse measurement of a starting wavefront (W0) which the optical measuring system produces as actual wavefront after actually setting the starting actuator position set (X0) is carried out.

Abstract: A drive device for driving an actuator of an optical system comprises: a switching amplifier for generating an amplified signal depending on a modulation signal; a filter unit connected between the actuator and the switching amplifier and having at least one inductance; a providing unit for providing a supply voltage; and a two-quadrant controller having feedback capability coupled between the providing unit and the switching amplifier.

Abstract: An EUV reflectometer includes a radiation source, a beam shaping unit (130) generating a measurement beam (190) from the radiation; a positioning device (500) for holding and positioning a test object (110) relative to the measurement beam in plural degrees of freedom; and a detector that detects the EUV radiation reflected by the test object. The positioning device has a main carrier (520), which is rotatable about a vertical rotation axis and on which a parallel kinematic multi-axis system (530) having a multiplicity of actuators is arranged. A common platform (540) movable in three linear and three rotational degrees of freedom carries a holding device (550) for holding the test object and a rotary drive for rotating the holding device about a rotation axis. An associated measuring system (700) determines the location and position of the test object in space and/or in relation to the measurement beam.

Abstract: Methods and evaluation devices for evaluating 3D data of a device under inspection are provided. A first machine learning logic detects target objects, and a second machine learning logic provides a voxel segmentation for the target objects. Based on the segmented voxels, a transformation to feature space is performed to obtain measurement results.

Abstract: Method for avoiding a degradation of an optical element, wherein the optical element is arranged in a housing, comprising: a) determining a first degradation value; b) determining a second degradation value, wherein the first degradation value and the second degradation value are determined at different times; c) forming a degradation profile based on the first degradation value and the second degradation value; d) calculating a temporal development of the degradation profile; e) determining at least one predicted degradation value based on the calculated temporal development of the degradation profile; f) comparing the at least one predicted degradation value with a predefinable first limit degradation value; g) monitoring for a predefinable first deviation between the at least one predicted degradation value and the first limit degradation value; h) feeding a first decontamination medium into the interior if attainment of the predefinable first deviation is identified.

Abstract: A device for measuring a substrate for semiconductor lithography with a reference interferometer for ascertaining the change in the ambient conditions, wherein the reference interferometer comprises a means for changing the optical path length of a measurement section of the reference interferometer, and a method for correcting cyclic error components in the reference interferometer using same.

Abstract: A device for examining and/or processing an element for photolithography with a beam of charged particles, the device including (a) means for acquiring measurement data while the element for photolithography is exposed to the beam of charged particles; and (b) means for predetermining a drift of the beam of charged particles relative to the element for photolithography with a trained machine learning model and/or a predictive filter. The trained machine learning model and/or the predictive filter use(s) at least the measurement data as input data.