Abstract: A system for determining the position of a movable object in space includes a marker which is to be applied to the object. The marker has a surface which is subdivided into a plurality of individual fields. The fields each have a statistical noise pattern. The system also includes an image capture unit which is remote from the object and is arranged to capture an image of the marker. The system further includes an image evaluation unit which stores a reference image of the noise patterns and is designed to locate at least one of the fields in the currently captured image of the marker by comparison with the reference image in order to determine a current position of the marker in space. There are corresponding methods for determining a position the object.

Abstract: When replacing a mirror in a projection exposure apparatus, a mirror for replacement is initially removed (41). Position- and orientation data of the removed mirror for replacement are measured (43) by a position -and orientation data measuring device. Furthermore, position- and orientation data of a replacement mirror, to be inserted in place of the mirror for replacement, are measured (46) using the position- and orientation data measuring device. Bearing points of the replacement mirror are reworked (48) on the basis of ascertained differences between, firstly, the position- and orientation data of the mirror for replacement and, secondly, the position- and orientation data of the replacement mirror. The reworked replacement mirror is installed (54). This yields a mirror replacement method, in which an adjustment outlay of the replacement mirror in the projection exposure apparatus is reduced.

Abstract: The invention relates to a device and a method for processing a microstructured component, in particular for microlithography. A device for processing a microstructured component comprises an ion beam source for applying an ion beam to at least regions of the component, wherein an ion energy of this ion beam is no more than 5 keV, and a detector for detecting particles backscattered at the component.

Abstract: The invention relates to a method for operating a machine for microlithography which has a multiplicity of machine components. According to one aspect, malfunctions of these machine components that occur during the operation of the machine are each describable by a symptom, wherein the method includes the following steps: creating a database in which a cause is in each case assigned to different combinations of these symptoms, automatically recording the symptoms occurring within a predetermined time interval when a problem occurs during the operation of the machine and automatically assigning a cause to the problem on the basis of the recorded symptoms and the database.

Abstract: An optical arrangement, in particular to a lithography system, includes: a first component, in particular a carrying frame; a second component which is movable relative to the first component, in particular a mirror or a housing; and at least one stop having at least one stop face for limiting the movement of the second component in relation to the first component. The stop includes a metal foam for absorbing the kinetic energy of the second component when it strikes against the stop face. A method for repairing an optical arrangement of this kind after a shock load includes replacing at least one stop, in which the metal foam was compressed under the shock load, with a stop in which the metal foam is not compressed.

Abstract: For the qualification of a mask for microlithography, the effect of an aerial image of the mask on the wafer is ascertained by means of a simulation for predicting the wafer structures producible by means of the mask.

Abstract: A method adjusts a first element of a lithography apparatus toward a second element of the lithography apparatus via a tunable spacer which is arranged between the first element and the second element. The method includes: determining an actual location of the first element; determining a nominal location of the first element; unloading the tunable spacer; adjusting a height of the tunable spacer to bring the first element from the actual location to the nominal location; and loading the tunable spacer.

Abstract: A beam-forming and illuminating system for a lithography system, such an EUV lithography system, includes an optical element and an adjusting device. The adjusting device is configured so that, during a heat-up phase of the beam-forming and illuminating system, the adjusting device measures a field position and/or a pupil position of the beam-forming and illuminating system and adjusts the orientation and/or position of the optical element based on the measured field position and/or pupil position to keep the optical element in a desired position.

Abstract: A measurement apparatus (10) for measuring a wavefront aberration of an imaging optical system (12) includes (i) a measurement wave generating module (24) which generates a measurement wave (26) radiated onto the optical system and which includes an illumination system (30) illuminating a mask plane (14) with an illumination radiation (32), as well as coherence structures (36) arranged in the mask plane, and (ii) a wavefront measurement module (28) which measures the measurement wave after passing through the optical system and determines from the measurement result, with an evaluation device (46), a deviation of the wavefront of the measurement wave from a desired wavefront. The evaluation device (46) determines an influence of an intensity distribution (70) of the illumination radiation in the region of the mask plane on the measurement result and, when determining the deviation of the wavefront, utilizes the influence of the intensity distribution.

Abstract: Methods for determining metrology sites for products includes detecting corresponding objects in measurement data of one or more product samples, and aligning the detected objects are aligned. The methods also include analyzing the aligned objects, and determining metrology sites based on the analysis. Devices use such methods to determine metrology sites for products.

Abstract: The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.

Abstract: A method for analyzing the wavefront effect of an optical system includes: illuminating a measurement mask (110, 310) with illumination light, producing an interferogram in a specified plane using a diffraction grating (150) from a wavefront from the illuminated measurement mask and traveling through the optical system; and capturing the interferogram with a detector (170). Different angular distributions of the illumination light incident on the measurement mask are produced via a mirror arrangement of independently settable mirror elements. A plurality of interferograms are captured in a plurality of measurement steps, wherein these measurement steps differ respectively in angular distribution of the illumination light that is incident on the measurement mask.

Abstract: An imaging optical unit for EUV microlithography is configured so that, when used in an optical system for EUV microlithography, relatively high EUV throughput and high imaging quality can achieved.

Abstract: An arrangement of a microlithographic imaging device, such as one that operates in the EUV range, includes a holding device for holding an optical element. The optical element includes an optical surface and defines a plane of main extension, in which the optical element defines a radial direction and a circumferential direction. The holding device includes a base unit and more than three separate holding units. The base unit includes a plurality of support interface units, which are spaced apart from one another in the circumferential direction, for connecting the holding device to a support structure. The holding units are connected to the base unit and distributed along the circumferential direction and spaced apart from one another. The holding units hold the optical element with respect to the base unit.

Abstract: An arrangement of a microlithographic optical imaging device includes first and second supporting structures. The first supporting structure supports at least one optical element of the imaging device via an active relative situation control device of a control device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another. Each supporting spring device defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device of the control device. The measuring device is connected to the relative situation control device. The measuring device outputs to the relative situation control device measurement information representative for the position and/or the orientation of the at least one optical element in relation to a reference in at least one degree of freedom in space.

Abstract: A method for producing a reflecting optical element for a projection exposure apparatus (1). The element has a substrate (30) with a substrate surface (31), a protection layer (38) and a layer partial system (39) suitable for the EUV wavelength range. The method includes: (a) measuring the substrate surface (31), (b) irradiating the substrate (30) with electrons (36), and (c) tempering the substrate (30). Furthermore, an associated reflective optical element for the EUV wavelength range, a projection lens with a mirror (18, 19, 20) as reflective optical element, and a projection exposure apparatus (1) including such a projection lens.

Abstract: A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Abstract: An optical arrangement for a lithography apparatus has a microsystem with a mirror array. A respective mirror of the mirror array is set up to reflect working light of the lithography apparatus on its front side and also a measuring beam on its rear side. One or more radiation sources, which are provided outside the microsystem, are set up to provide the respective measuring beam. One or more sensor units are set up to sense a tilting angle of a respective mirror in dependence on the respectively reflected measuring beam.

Abstract: The disclosed method involves: recording, under illumination of a diffractive measurement structure via an illumination device, a plurality of diffraction images which differ from one another in terms of the region of the measurement structure that contributes to the respective diffraction image, and ascertaining transmission properties and/or reflection properties of the diffractive measurement structure based on the plurality of diffraction images, wherein the steps of recording a plurality of diffraction images and of ascertaining transmission properties and/or reflection properties of the diffractive measurement structure in a plurality of recording sequences are carried out repeatedly in a plurality of recording sequences, wherein these recording sequences differ from one another with respect to the illumination angles that are respectively set during the illumination of the diffractive measurement structure and at which the diffractive measurement structure is illuminated.

Abstract: The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.