Abstract: The present invention provides a method for manufacturing a semiconductor structure, comprising the following steps of: forming a substrate having a package array, wherein the package array has a plurality of contact pads and a protection layer, and the plurality of contact pads are exposed to the outer side of the protection layer; forming a thermosetting non-conductive layer covering the substrate; partially solidifying the thermosetting non-conductive layer to form a semi-solid non-conductive layer; connecting chips to the package array on the substrate, wherein each of the chips has an active surface, a plurality of chip pads and a plurality of composite bumps, the chip pads are formed on the active surface, and the composite bumps are formed on the chip pads so that the composite bumps electrically connect to each of the contact pads; pressing and heating the chips and the substrate so that the semi-solid non-conductive layer adheres with the chips and the substrate; pre-heating an encapsulant preformed

Abstract: Semiconductor package structures and methods for manufacturing the same are provided. The semiconductor package structure comprises a substrate unit and a first chip stack structure. The substrate unit comprises a circuit structure having test pads. The first chip stack structure comprises chips, and each of the chips has a plurality of through silicon plugs. The through silicon plugs of two adjacent chips are electrically connected and further electrically connected to the test pads of the substrate unit for electrical testing. Another semiconductor package structure provided by the present invention comprises a first semiconductor chip and a second semiconductor chip. Each of the semiconductor chips has test pads for electrical testing and a plurality of through silicon plugs connecting to the test pads. The second semiconductor chip is mounted on the first semiconductor chip, and a portion of the through silicon plugs of two semiconductor chips are electrically connected with each other.

Abstract: A BGA package primarily includes a leadless leadframe with a plurality of leads, a chip disposed on the leads, a die-attaching layer adhering to an active surface of the chip and the top surfaces of the leads, a plurality of bonding wires electrically connecting the chip to the leads, an encapsulant, and a plurality of solder balls. Each lead has a bottom surface including a wire-bonding area and a ball-placement area, moreover, a plurality of lips project from the bottom surfaces of the leads around the ball-placement areas. The encapsulant encapsulates the chip, the bonding wires, the die-attaching layer, and the top surfaces, the bottom surfaces except the ball-placement areas. The solder balls are disposed on the ball-placement areas.

Abstract: A chip package structure is provided. The chip package structure comprises a first substrate, a second substrate and a plurality of chips. Therein, one of the chips is connected to the first substrate and electrically connected to the first substrate through a via hole of the first substrate. Thereby, the second substrate does not need the via hole for electrical connection of chips and thus, the surface thereof is adapted to remain intact to allow for the disposition of conductive balls throughout the surface.

Abstract: A dice rearrangement package structure is provided, which a dice having an active surface and a bottom surface, and a plurality of pads is disposed on the active surface; a package body is provided to cover the dices and the plurality of pads being exposed; one ends of plurality of metal traces is electrically connected to the each pads; a protection layer is provided to cover the active surface and the other ends of the exposed metal traces is electrically connected to the plurality of conductive elements, the characteristic in that the package body is a B-stage material.

Abstract: A multi-chips stacked package method which includes providing a lead frame includes a top surface and a reverse surface formed by a plurality of inner leads and a plurality of outer leads; fixing a first chip on the reverse surface of the lead frame and the active surface of the first chip includes a plurality of first pads closed to the central region; forming a plurality of first metal wires, and the first pads are electrically connected to the first inner leads and the second inner leads by the first metal wires; forming a plurality of metal spacers on the thermal fin of the lead frame; fixing a second chip to electrically connect to the top surface of the first inner leads and the second inner leads; forming a plurality of second metal wires, and the second pads are electrically connected to the top surface of the first inner leads and the second inner leads; and flowing a molding to form an encapsulated material to cover the first chip, the first metal wires, the second chip, the second metal wires, the

Abstract: A packaging conductive structure for a semiconductor substrate and a method for manufacturing the structure are provided. The structure comprises an under bump metal (UBM) that overlays a pad of the semiconductor substrate. At least one auxiliary component is disposed on the UBM. Then, a bump conductive layer is disposed thereon and a bump is subsequently formed on the bump conductive layer. Thus, the bump can electrically connect to the pad of the semiconductor substrate through the UBM and the bump conductive layer and can provide better junction buffer capabilities and conductivity.

Abstract: A die rearrangement package structure is provided, which includes a die that having an active surface and a bottom surface, and a plurality of pads is disposed on the active surface; a package body is provided to cover a die and the active surface being exposed; a polymer material with at least one slit is provided to cover the active surface and the pads is exposed from said slits; one ends of a plurality of metal traces is electrically connected to each pads; a protective layer is provided to cover the active surface of the dies and each metal traces, and the other ends of the metal traces being exposed; a plurality of connecting elements is electrically connected other ends of the metal traces, the characterized in that: the package body is a B-stage material.

Abstract: A leadframe employed by a leadless package comprises a plurality of package units and an adhesive tape. Each of the package units has a die pad with a plurality of openings and a plurality of pins disposed in the plurality of openings. The adhesive tape is adhered to the surfaces of the plurality of package units and fixes the die pad and the plurality of pins.

Abstract: A chip package structure includes a chip-placed frame that having an adhesive layer thereon; a chip includes a plurality of pads on an active surface thereon, and is provided on the adhesive layer; a package structure is covered around the four sides of the chip-placed frame, and the height of the package structure is larger than the height of the chips; a plurality of patterned metal traces is electrically connected to the plurality of pads, another end is extended out to cover the surface of the package structure; a patterned protective layer is covered on the patterned metal traces and another end of the patterned metal traces is exposed; a plurality of patterned UBM layer is formed on the extended surface of the patterned metal traces; and a plurality of conductive elements is formed on the patterned UBM layer and is electrically connected to one end of the exposed portion of the patterned metal traces.

Abstract: A chip package structure is provided, includes a chip that having a plurality of pads and an adhesive layer on the back side; an encapsulated structure is covered around the four sides of the chip to expose the pads, and the through holes is formed within the encapsulated structure; a patterned first protective layer is formed on the portion surface of encapsulated structure, the portion of active surface of the chips, and the pads of the chip and the through holes are to be exposed; a metal layer is formed on the portion surface of the patterned first protective layer and formed to electrically connect the pads and to fill with the through holes; the patterned second protective layer is formed on the patterned first protective layer and the portion of metal layer, and the portion surface of metal layer is to be exposed; a patterned UBM layer is formed on the exposed surface of the metal layer and the portion surface of the patterned second protective layer; and the conductive elements is formed on the patter

Abstract: A chip stacked package structure and applications are provided. The chip-stacked package structure includes a main substrate, a baseboard substrate, and a molding compound. The main substrate has a substrate and a first chip. The substrate has a first surface and a second surface opposite to the first surface. The first chip is disposed on the first surface and electrically connected to the substrate via first bumps. The baseboard substrate has a third surface and a fourth surface faced towards the substrate. The baseboard substrate includes a core layer having a plurality of first through holes and a first accommodation space in which the first chip is received. The second chip is disposed on the third surface of the baseboard substrate. The molding compound is used to encapsulate the main substrate, and the baseboard substrate.

Abstract: A leadless semiconductor package with an electroplated layer embedded in an encapsulant and its manufacturing processes are disclosed. The package primarily includes a half-etched leadframe, a chip, an encapsulant, and an electroplated layer. The half-etched leadframe has a plurality of leads and a plurality of outer pads integrally connected to the leads. The encapsulant encapsulates the chip and the leads and has a plurality of cavities reaching to the outer pads to form an electroplated layer on the outer pads and embedded in the cavities. Accordingly, under the advantages of lower cost and higher thermal dissipation, the conventional substrates and their solder masks for BGA (Ball Grid Array) or LGA (Land Grid Array) packages can be replaced. The leads encapsulated in the encapsulant have a better bonding strength and the electroplated layer embedded in the encapsulant will not be damaged during shipping, handling, or storing the semiconductor packages.

Abstract: A packaging conductive structure for a semiconductor substrate and a method for forming the structure are provided. The dielectric layer of the packaging conductive structure partially overlays the metallic layer of the semiconductor substrate and has a receiving space. The lifting layer and conductive layer are formed in the receiving space, wherein the conductive layer extends for connection to a bump. The lifting layer is partially connected to the dielectric layer. As a result, the conductive layer can be stably deposited on the edge of the dielectric layer for enhancing the reliability of the packaging conductive structure.

Abstract: A depository monitoring system for use in a semiconductor factory comprises a plurality of carriers, each holding at least one semiconductor object; a depository monitoring host for monitoring a depository of each carrier; and a plurality of RFID tags and a plurality of RFID readers. It is characterized in that the RFID tags are disposed on the carriers and/or semiconductor objects, respectively, wherein each RFID tag has a tag information; the RFID readers read/write the tag information from/to the RFID tags; and the depository monitoring host comprises: a legacy database to store information related to the depository monitoring system; an RFID middleware for processing operations between the RFID readers and the RFID tags; a web interface for processing commands and query results through a B2B internet; an input/output interface for processing commands and query results through an intranet; and a depository controller for performing a sequence of processes in depository monitoring.

Abstract: The present invention provides a stacked chip package structure with leadframe having inner leads with transfer pad, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads arranged in rows facing each other and vertically distant from the plurality of inner leads; an offset chip-stacked structure formed with a plurality of chips stacked together, the offset chip-stacked structure being set on the die pad and electrically connected to the plurality of inner leads arranged in rows facing each other; and an encapsulant covering the offset chip-stacked structure and the leadframe, the plurality of outer leads extending out of said encapsulant; the improvement of which being that the inner leads of the leadframe are coated with an insulating layer and a plurality of metal pads are selectively formed on the insulating layer.

Abstract: A thin-film fingerprint sensor package primarily comprises a fingerprint sensor chip, a plurality of bumps, a wiring film, an encapsulant and a metal base to mechanically hold the fingerprint sensor chip. A sensing area is formed on the active surface of the fingerprint sensor chip. The bumps are disposed on the active surface. The wiring film has an opening to expose the sensing area and comprises a plurality of leads bonded to the bumps. The wiring film further has a ground lead electrically connecting the fingerprint sensor chip to the metal base. Therefore, the fingerprint sensor package can provide ESD protection during fingerprint recognition to avoid the damage of the fingerprint sensor chip.

Abstract: The present invention provides a chip-stacked package structure with leadframe having bus bar, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads and is vertically distant from the plurality of inner leads; a chip-stacked structure formed with a plurality of chips that stacked together and set on the die pad, the plurality of chips and the plurality of inner leads being electrically connected with each other; and an encapsulant covering over the chip-stacked package structure and the leadframe, in which the leadframe comprises at least a bus bar, which is provided between the plurality of inner leads arranged in rows facing each other and the die pad.

Abstract: An IC package primarily comprises a substrate, a die-attaching layer, a chip, at least a bonding wire, and a plurality of electrical connecting components. The substrate has a top surface and a bottom surface where the top surface includes a die-attaching area for disposing the die-attaching layer. The chip is attached to the die-attaching area by the die-attaching layer and is electrically connected to the substrate by the electrical connecting components. Both ends of the bonding wire are bonded to two interconnecting fingers on the top surface of the substrate where at least a portion of the bonding wire is encapsulated in the die-attaching layer to replace some wirings or vias inside a conventional substrate. Therefore, the substrate has simple and reduced wiring layers, i.e., to reduce the substrate cost. A chip carrier of the corresponding IC package is also revealed.

Abstract: A chip package structure includes a chip-placed frame that having an adhesive layer thereon; a chip includes a plurality of pads on an active surface thereon, and is provided on the adhesive layer; a package structure is covered around the four sides of the chip-placed frame, and the height of the package structure is larger than the height of the chips; a plurality of patterned metal traces is electrically connected to the plurality of pads, another end is extended out to cover the surface of the package structure; a patterned protective layer is covered on the patterned metal traces and another end of the patterned metal traces is exposed; a plurality of patterned UBM layer is formed on the extended surface of the patterned metal traces; and a plurality of conductive elements is formed on the patterned UBM layer and is electrically connected to one end of the exposed portion of the patterned metal traces.