Abstract: A semiconductor multi-package module has stacked lower and upper packages, each of which includes a die attached to a substrate, in which the second package is inverted, in which the upper and lower substrates are interconnected by wire bonding, and in which the inverted second package comprises a wire bond carrier package. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper wire bond carrier package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: A wire bond interconnection between a die pad and a bond finger includes a support pedestal at a bond site of the lead finger, a ball bond on the die pad, and a stitch bond on the support pedestal, in which a width of the lead finger at the bond site is less than a diameter of the support pedestal. Also, a semiconductor package including a die mounted onto and electrically connected by a plurality of wire bonds to a substrate, in which each of the wire bonds includes a wire ball bonded to a pad on the die and stitch bonded to a support pedestal on a bond site on a lead finger, and in which the width of the lead finger at the bond site is less than the diameter of the support pedestal.

Abstract: A multichip package has a leadframe including peripheral leads arranged about a centrally situated die paddle. A first die is attached to a first side of the leadframe die paddle. The second side of the leadframe is partially cut away so that an outer part of the die paddle is thinner, and an inner part of the leads is thinner. These partially cutaway portions in the second side of the leadframe provide a cavity, in which a second die is attached active side upward. The lower die may have bond pads near the center of the active surface, and electrical interconnection of the lower die may be made by wire bonds running through the gap between the die paddle and the leads; or, the lower die may be attached, and electrically interconnected, by flip chip interconnect to the die attach side of the cavity in the leadframe.

Abstract: An array of grooves (23) is formed in a first side (12) of a wafer (10) during a wafer processing method. A back grinding tape (16) is adhered to the first side. An amount of material is removed from the second side (20) of the wafer. An adhesive layer (30) is applied to the second side. Dicing tape (24) is applied to the adhesive layer to create a first wafer assembly (32). The first wafer assembly is supported on a support surface (34) with the dicing tape facing the support surface and the back grinding tape exposed. The back grinding tape is removed and the adhesive layer is severed through the array of grooves to create individually removable die (28).

Abstract: A capillary tip for a wire bonding tool has a chamfer provided with at least one annular groove. The annular groove is generally oriented in a plane perpendicular to the axis of the capillary. In a sectional view through the capillary axis, the groove profile may be generally part-oval or part circular, such as semicircular or half-oval; or generally rectangular; or generally triangular. In some embodiments the width of the groove profile at the face of the chamfer is at least about one-tenth, more usually at least about one-fifth, the length of the chamfer face; and less than about one-half, more usually less than about one-third, the length of the chamfer face. In some embodiments two or more such grooves are provided. The grooved chamfer can improve the transmission of ultrasonic energy to the wire ball during formation of the bond.

Abstract: A stud bump structure for electrical interconnection between a pair of members includes a base portion, and a stem portion. The base portion is affixed to a pad or trace in one of the pair of members to be interconnected (such as an integrated circuit chip), and the stem end is configured to contact a metal pad on the other member (such as a printed circuit board) to complete the interconnect. According to the invention, the stem end is truncated to form a transverse plane, and the stem is more compliant than the base. Also, a method for forming a stud bump on a contact surface, includes forming a bump base portion on the surface, drawing out a generally conical tail from a top of the base, and truncating the tail to form a stem portion having a planar transverse top surface and having a length from the top of the base portion to the top surface. In some embodiments the tail portion, at least, of the stud bump is formed using a wire bonding tool.

Abstract: A cavity semiconductor package has a pre-molded leadframe construction. The leadframe is formed by molding around a die pad, and plural terminal lands. The leadframe has a hole for an acoustic port, such that the package can be soldered on a back side of a printed circuit board and have air access to a sensor die in the package from a front side of the printed circuit board via the acoustic port. The leadframe may also have a hollow or concave recess that defines an acoustic cavity in conjunction with the sensor die or printed circuit board.

Abstract: A flip chip interconnect pad layout has the die signal pads are arranged on the die surface near the perimeter of the die, and the die power and ground pads arranged on the die surface inboard from the signal pads; and has the signal pads on the corresponding package substrate arranged in a manner complementary to the die pad layout and the signal lines routed from the signal pads beneath the die edge away from the die footprint, and has the power and ground lines routed to vias beneath the die footprint. Also, a flip chip semiconductor package in which the flip chip interconnect pad layouts have the die signal pads situated in the marginal part of the die and the die power and ground pads arranged on the die surface inboard from the signal pads, and the corresponding package substrates have signal pads arranged in a manner complementary to the die pad layout and signal lines routed from the signal pads beneath the die edge away from the die footprint.

Abstract: A solder bump reflow process includes raising the temperature of an aligned die-substrate assembly to a temperature and for a time sufficient to cause a first reflow; allowing the temperature of the assembly to fall to a first cooling temperature and for a time sufficient to re-solidify the solder; raising the temperature of the die-substrate assembly a second time to a temperature and for a time sufficient to cause a second reflow; allowing the temperature of the assembly to fall a second time to a second cooling temperature and eventually to an ambient room temperature; in which at least the first and second melts and the first re-solidification are conducted without exposing the assembly to oxidizing atmosphere. Also, apparatus for carrying out the method includes a multi-zone oven.

Abstract: A flip chip interconnect is made by mating the interconnect bump directly onto a lead, rather than onto a capture pad. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having electrically conductive traces in a die attach surface, in which the bumps are mated directly onto the traces. In some embodiments the interconnection is formed without employing a solder mask. In some methods a curable adhesive is dispensed either onto the bumps on the die or onto the traces on the substrate; the adhesive is partly cured during the mating process, and the partly cured adhesive serves to confine the molten solder during a reflow process.

Abstract: A method is provided for making a semiconductor multi-package module, by providing a lower molded ball grid array package including a lower substrate and a die, affixing an upper molded package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: A semiconductor multi-package module has stacked lower and upper packages, each package including a die attached to a substrate, in which the upper and lower substrates are interconnected by wire bonding, and in which the upper package is inverted. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper molded package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: A semiconductor multi-package module has stacked first and second packages, each of which includes a die attached to a substrate, in which the second package is inverted, in which the first and second substrates are interconnected by wire bonding, and in which the first package includes a flip-chip ball grid array package having a flip-chip in a die-up configuration. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a flip-chip in a die-up configuration, affixing an upper molded package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: Individual pieces of film adhesive (42) are placed on a support surface (46). Diced semiconductor chips (24) are individually placed on the individual pieces of the film adhesive thereby securing the diced semiconductor chips to the support surface to create first chip subassemblies (52). The diced semiconductor chip and support surface of each of a plurality of the first chip subassemblies are electrically connected, such as by wires (54), to create second chip subassemblies ((56). At least a portion of at least some of the second chip subassemblies are encapsulated, such as with molding compound (58), to create semiconductor chip packages (60).

Abstract: A semiconductor multi-package module includes a processor and a plurality of memory packages mounted on a surface of the multipackage module substrate. In some embodiments the memory packages include stacked die packages, and in some embodiments the memory packages include stacked memory packages. In some embodiments the processor is situated at or near the center of the multipackage module substrate and the plurality of memory packages or of stacked memory package assemblies are situated on the multipackage module substrate adjacent the processor.

Abstract: A semiconductor multi-package module has stacked lower and upper packages, each of which includes a die attached to a substrate, in which the second package is inverted, and in which the upper and lower substrates are interconnected by wire bonding; and further in which at least one of the packages includes a stacked die package, or includes an additional stacked package. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper molded package including an upper substrate in inverted orientation onto the upper surface of the lower package, in which one or both of the upper and lower packages is a stacked die package or in which one of the packages includes an additional stacked package, and forming z-interconnects between the upper and lower substrates.

Abstract: A package on package system is provided including providing a first substrate having a first integrated circuit thereon and a second substrate having a second integrated circuit thereon, the second substrate having a recess provided therein. The first and second substrates are mounted having the first integrated circuit at least partially nested in the recess.

Abstract: A semiconductor multi-package module having stacked lower and upper packages, each package including a die attached to a substrate, in which the upper and lower substrates are interconnected by wire bonding. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper molded package including an upper substrate onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: An anti-warpage backgrinding tape (11) is secured to the circuit side (12) of a semiconductor wafer (14). The backside (16) of the wafer is background. The backside of the wafer is secured to dicing tape (18) so that the anti-warpage backgrinding tape is exposed. The wafer is diced to create individual die structure (34). The die structure comprises semiconductor die (22) with anti-warpage tape elements (36) on circuit sides of the semiconductor die. A die structure is removed from the dicing tape. The backside of the die of the die structure is adhered to a substrate (24). The anti-warpage tape element is removed from the die. The anti-warpage backgrinding tape is preferably partially or fully transparent to permit sensing of guide markings on the wafer during wafer dicing. The adhesive is preferably a curable adhesive. The adhesion between the anti-warpage tape element and the chosen die may be reduced by the application of heat (38).

Abstract: A multipackage module has multiple die of various types and having various functions and, in some embodiments, the module includes a digital processor, an analog device, and memory. A first die, having a comparatively large footprint, is mounted onto first die attach region on a surface of a first package substrate. A second die, having a significantly smaller footprint, is mounted upon the surface of the first die, on a second die attach region toward one edge of the first die. The first die is electrically connected by wire bonds to conductive traces in the die-attach side of the substrate. The second die is electrically connected by wire bonds to the first package substrate, and may additionally be electrically connected by wire bonds to the first die. In some embodiments a spacer is mounted upon the first die, on a spacer attach region of the surface of the first die that is not within the die attach region, and which may be generally near a margin of the first die.