Abstract: An image sensor having a portion including interconnection levels formed on a semiconductor substrate covered with a first layer of a dielectric material, including conductive tracks separated from one another by insulating layers interconnected by vias crossing the insulating layers, and an infrared bandpass filter comprising filter levels adjacent to the interconnection levels formed by an alternation of second layers of the dielectric material and of silicon layers, the refraction index of the dielectric material being smaller than 2.5 at the maximum transmission wavelength of the filter, one of the second dielectric layers of each filter level being identical to the insulating layer of the adjacent interconnection level.

Abstract: A photodetector including a photoelectric conversion structure made of a semiconductor material and, on a light-receiving surface of the conversion structure, a stack of first and second diffractive elements, the second element being above the first element, wherein: the first element includes at least one pad made of a material having an optical index n1, laterally surrounded with a region made of a material having an optical index n2 different from n1; the second element includes at least one pad made of a material having an optical index n3, laterally surrounded with a region made of a material having an optical index n4 different from n3; the pads of the first and second elements are substantially vertically aligned; and optical index differences n1?n2 and n3?n4 have opposite signs.

Abstract: A memory array including: a first volatile memory cell including first and second cross-coupled inverters between first and second storage nodes; a first non-volatile memory cell including at least one resistive element that can be programmed to take one of at least two resistive states; and a control circuit adapted to couple the first non-volatile memory cell to the first and second storage nodes in order to generate a current for programming the resistive state of the at least one resistive element.

Abstract: A method for detecting electric arcs in a closed chamber having no openings larger than 5 mm and defining a gas volume to be monitored. The method includes a step of measuring a sound level captured by a microphone, placed inside the chamber, at frequencies greater than about 60 kHz while filtering out the lower frequencies, and a step of comparing the level with a threshold.

Abstract: A clock receiver including: a ring oscillator adapted to generate a clock signal, the ring oscillator having a sequence of N inverters, an input of a first inverter being coupled to a feedback node, an input of a second inverter being connected to an output of the first inverter and to an input line for receiving a reference clock signal, and an output of the second inverter or of a third inverter providing a first phase signal; a further sequence of inverters, an input of a first further inverter being coupled to the feedback node, and an output of another further inverter providing a second phase signal; and a control circuit for adjusting an oscillation frequency of the ring oscillator based on the relative phases of the first and second phase signals.

Abstract: A process for manufacturing a piezoelectric and/or pyroelectric device comprising a polyvinylidene fluoride film, the process comprising a step of forming at least one portion of a layer of a solution comprising a solvent and a compound comprising polyvinylidene fluoride and a step of irradiating the portion with pulses of at least one ultraviolet radiation. The irradiating step enables the formation of at least two ? crystalline phases having different orientations.

Abstract: A circuit for controlling a first field-effect transistor of a power converter, intended for a converter including at least one first and one second transistor connected in series between two terminals for applying a first voltage, the circuit including a circuit for detecting the opening of the second transistor.

Abstract: A piezoelectric device including a substrate, at least two electrodes extending on the substrate, at least one piezoelectric strip extending on the substrate and on the electrodes, and at least one electrically-conductive strip extending at least on one of the electrodes and on the piezoelectric strip and in contact with the substrate on either side of the piezoelectric strip.

Abstract: A terahertz image matrix sensor including a matrix of pixels and comprising, for each pixel, an antenna for receiving a terahertz radiation modulated by a signal at a modulation frequency and a synchronous filter with N pathways, where N is an integer greater than or equal to 4, each pathway including a capacitive element and at least one first breaker controlled by a first signal at said modulation frequency.

Abstract: A method for calibrating an algorithm for estimating a state variable of a battery comprising the following steps: measuring at least one physical quantity of the battery making it possible to detect a first characteristic value of the state variable at a first time; defining a period between the first time and a second time; measuring at least one physical quantity of the battery making it possible to detect a second real characteristic value of the state variable at a second time; comparing, at the end of said period, an estimated value of said variable provided by the algorithm with said second characteristic value; and adapting at least one parameter of the algorithm on the basis of the comparison. The invention also concerns a circuit for determining a state variable of a battery, suitable for implementing said method.

Abstract: The invention relates to a device for processing information delivered by a photon detector, comprising: an analogue circuit for generating a signal comprising a series of pulses, each pulse having an amplitude proportional to the energy freed by an interaction of a photon in the detector; an analogue circuit for determining the instant at which the amplitude of a pulse of the signal is maximal; and an element for capturing the value of the signal at said instant.

Abstract: An electricity generator including a first converter suitable for converting a variation of an energy to be harvested into a corresponding excess of electrical charges. The generator includes a circuit for collecting the excess of electrical charges, the circuit has a first controllable mechanical switch, and a control device for the first switch designed to control the switching of the switch to its closed position when the excess of electrical charges exceeds a first predetermined threshold. The switch is a magnetic switch and the control device comprises a variable magnetic field source which controls the switching of the first switch to its closed position only at the time when the excess of electrical charges exceeds the first predetermined threshold.

Abstract: A method for forming a silicon ingot includes the following steps: providing a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining the interstitial oxygen concentration in different areas of the silicon ingot, calculating the concentration of thermal donors to be created in the different areas to reach a target value of the electrical resistivity, and subjecting the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined from the thermal donor and interstitial oxygen concentrations of the area and from a predefined annealing time.

Abstract: Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure. The invention, that can be used for molecular characterisation, makes use of a support (44) to connect a nano-object (50) onto its top face and continue the electrical contact on its bottom face. At least two interconnects (52, 54) pass through the support. The two faces of the support comprise contact continuity zones (56, 58, 60, 62) for the interconnects. According to the invention, at least the zones (56, 58) in the top face are doped zones each having a pattern adapted to the fan out of the interconnect associated with it, on this face.

Abstract: The invention relates to a method for managing an access point of a communication network, said access point being suitable for supplying data packets to at least one communication terminal connected to said access point, said method comprising the following steps when the access point is inactive or on standby: a plurality of data packets are placed in a queue, a data packet having a waiting time d at the expiration of which the packet is considered lost; for each waiting time value d, the transmission time of the data packets having a waiting time d is determined; and if, for a waiting time d, a corresponding transmission time Td is higher than said corresponding waiting time d, the duration d?Td thus being negative, the method comprises a step of activating said access point in order to transmit packets from the queue, the transmitted packets preferably being those having a low waiting time.

Abstract: A user interface system having rows of photon sensors for detecting an actuating body and lenses, each lens at least partially covering, with the exception of the central portion of the lens, a row of photon sensors.

Abstract: The present invention relates to a pair of transistors wherein each transistor of said transistor pair is made of several sub-transistors, and each sub-transistor of a transistor has a sub-transistor channel length and has a sub-transistor channel width, said sub-transistor channel length being substantially equal to the transistor channel length, and said sub-transistor channel width being smaller than the transistor channel width, so that the sum of the sub-transistor channel widths of the sub-transistors of a transistor is substantially equal to the channel width of said transistor, wherein each sub-transistor (43) of a transistor of said transistor pair is spaced apart from at least one adjoining sub-transistor (44) of the other transistor of said transistor pair by a distance D less than half the transistor channel width, said distance d between two sub-transistors (43, 44) being measured between the respective center of the channels of said sub-transistors.

Abstract: The invention relates to a photovoltaic cell having a heterojunction, including a doped substrate (1), in which: a first main face (1A) of said substrate is covered with a passivation layer (2A), a doped layer (3A) of the type opposite to the substrate and forming the transmitter of said cell; the second main face (1B) of said substrate is covered with a passivation layer (2B), a doped layer (3B) of the same type as the substrate defining a repulsing field for the minor carriers of the substrate; characterized in that: the material of the passivation layer (2A) on the transmitter (E) side is selected so as to have a lower potential barrier for the photo-generated minor carriers than for the major carrier of the substrate; and in that the material of the passivation layer (2B) on the side of the repulsing field (BSF) is selected so as to have a lower potential barrier for all the photo-generated major carriers than for the minor carriers of the substrate.

Abstract: A method of optical and electrical simulation of an optoelectronic device, the surface of which is intended to be illuminated has a texture formed of regular cones, under the effect of the illumination of the surface by an incident light beam having an intensity spectrum determined on the basis of the wavelength, the method being implemented by computer and comprising: modelling the device in the form of a structure for which the illuminated surface is modelled by a planar surface, modelling the incident light beam by: a first light beam inclined relative to the normal to the surface with a first non-zero angle, simulating an angle of incidence of the incident beam on the texture of the surface of the device, and for which the intensity is equal to that of the incident beam.

Abstract: The present invention relates to a method of obtaining peptides from procaryotic and/or eucaryotic cells.