Abstract: A process for manufacturing a piezoelectric and/or pyroelectric device comprising a polyvinylidene fluoride film, the process comprising a step of forming at least one portion of a layer of a solution comprising a solvent and a compound comprising polyvinylidene fluoride and a step of irradiating the portion with pulses of at least one ultraviolet radiation. The irradiating step enables the formation of at least two ? crystalline phases having different orientations.

Abstract: A circuit for controlling a first field-effect transistor of a power converter, intended for a converter including at least one first and one second transistor connected in series between two terminals for applying a first voltage, the circuit including a circuit for detecting the opening of the second transistor.

Abstract: A piezoelectric device including a substrate, at least two electrodes extending on the substrate, at least one piezoelectric strip extending on the substrate and on the electrodes, and at least one electrically-conductive strip extending at least on one of the electrodes and on the piezoelectric strip and in contact with the substrate on either side of the piezoelectric strip.

Abstract: A terahertz image matrix sensor including a matrix of pixels and comprising, for each pixel, an antenna for receiving a terahertz radiation modulated by a signal at a modulation frequency and a synchronous filter with N pathways, where N is an integer greater than or equal to 4, each pathway including a capacitive element and at least one first breaker controlled by a first signal at said modulation frequency.

Abstract: A method for calibrating an algorithm for estimating a state variable of a battery comprising the following steps: measuring at least one physical quantity of the battery making it possible to detect a first characteristic value of the state variable at a first time; defining a period between the first time and a second time; measuring at least one physical quantity of the battery making it possible to detect a second real characteristic value of the state variable at a second time; comparing, at the end of said period, an estimated value of said variable provided by the algorithm with said second characteristic value; and adapting at least one parameter of the algorithm on the basis of the comparison. The invention also concerns a circuit for determining a state variable of a battery, suitable for implementing said method.

Abstract: The invention relates to a device for processing information delivered by a photon detector, comprising: an analogue circuit for generating a signal comprising a series of pulses, each pulse having an amplitude proportional to the energy freed by an interaction of a photon in the detector; an analogue circuit for determining the instant at which the amplitude of a pulse of the signal is maximal; and an element for capturing the value of the signal at said instant.

Abstract: An electricity generator including a first converter suitable for converting a variation of an energy to be harvested into a corresponding excess of electrical charges. The generator includes a circuit for collecting the excess of electrical charges, the circuit has a first controllable mechanical switch, and a control device for the first switch designed to control the switching of the switch to its closed position when the excess of electrical charges exceeds a first predetermined threshold. The switch is a magnetic switch and the control device comprises a variable magnetic field source which controls the switching of the first switch to its closed position only at the time when the excess of electrical charges exceeds the first predetermined threshold.

Abstract: A method for forming a silicon ingot includes the following steps: providing a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining the interstitial oxygen concentration in different areas of the silicon ingot, calculating the concentration of thermal donors to be created in the different areas to reach a target value of the electrical resistivity, and subjecting the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined from the thermal donor and interstitial oxygen concentrations of the area and from a predefined annealing time.

Abstract: Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure. The invention, that can be used for molecular characterisation, makes use of a support (44) to connect a nano-object (50) onto its top face and continue the electrical contact on its bottom face. At least two interconnects (52, 54) pass through the support. The two faces of the support comprise contact continuity zones (56, 58, 60, 62) for the interconnects. According to the invention, at least the zones (56, 58) in the top face are doped zones each having a pattern adapted to the fan out of the interconnect associated with it, on this face.

Abstract: The invention relates to a method for managing an access point of a communication network, said access point being suitable for supplying data packets to at least one communication terminal connected to said access point, said method comprising the following steps when the access point is inactive or on standby: a plurality of data packets are placed in a queue, a data packet having a waiting time d at the expiration of which the packet is considered lost; for each waiting time value d, the transmission time of the data packets having a waiting time d is determined; and if, for a waiting time d, a corresponding transmission time Td is higher than said corresponding waiting time d, the duration d?Td thus being negative, the method comprises a step of activating said access point in order to transmit packets from the queue, the transmitted packets preferably being those having a low waiting time.

Abstract: A user interface system having rows of photon sensors for detecting an actuating body and lenses, each lens at least partially covering, with the exception of the central portion of the lens, a row of photon sensors.

Abstract: The present invention relates to a pair of transistors wherein each transistor of said transistor pair is made of several sub-transistors, and each sub-transistor of a transistor has a sub-transistor channel length and has a sub-transistor channel width, said sub-transistor channel length being substantially equal to the transistor channel length, and said sub-transistor channel width being smaller than the transistor channel width, so that the sum of the sub-transistor channel widths of the sub-transistors of a transistor is substantially equal to the channel width of said transistor, wherein each sub-transistor (43) of a transistor of said transistor pair is spaced apart from at least one adjoining sub-transistor (44) of the other transistor of said transistor pair by a distance D less than half the transistor channel width, said distance d between two sub-transistors (43, 44) being measured between the respective center of the channels of said sub-transistors.

Abstract: The invention relates to a photovoltaic cell having a heterojunction, including a doped substrate (1), in which: a first main face (1A) of said substrate is covered with a passivation layer (2A), a doped layer (3A) of the type opposite to the substrate and forming the transmitter of said cell; the second main face (1B) of said substrate is covered with a passivation layer (2B), a doped layer (3B) of the same type as the substrate defining a repulsing field for the minor carriers of the substrate; characterized in that: the material of the passivation layer (2A) on the transmitter (E) side is selected so as to have a lower potential barrier for the photo-generated minor carriers than for the major carrier of the substrate; and in that the material of the passivation layer (2B) on the side of the repulsing field (BSF) is selected so as to have a lower potential barrier for all the photo-generated major carriers than for the minor carriers of the substrate.

Abstract: A method of optical and electrical simulation of an optoelectronic device, the surface of which is intended to be illuminated has a texture formed of regular cones, under the effect of the illumination of the surface by an incident light beam having an intensity spectrum determined on the basis of the wavelength, the method being implemented by computer and comprising: modelling the device in the form of a structure for which the illuminated surface is modelled by a planar surface, modelling the incident light beam by: a first light beam inclined relative to the normal to the surface with a first non-zero angle, simulating an angle of incidence of the incident beam on the texture of the surface of the device, and for which the intensity is equal to that of the incident beam.

Abstract: The present invention relates to a method of obtaining peptides from procaryotic and/or eucaryotic cells.

Abstract: A method for producing a photovoltaic cell with interdigitated contacts in the rear face, comprising: providing a doped silicon substrate; forming, on the rear face of said substrate, a doped semiconductor layer with a first dopant species; forming, on said layer, a dopant layer comprising a second dopant species, of an electric type opposite to that of the first species; forming, in the doped layer, at least one doped region of a type opposite to that of the first species, by irradiation of at least one region of the dopant layer with a luminous flux of fluence greater than a threshold above which the dopants of the irradiated region of the dopant layer diffuse into the region underlying the doped layer in such a way as to exceed the concentration of the first dopant species; and forming, in the doped layer, at least one electrically insulating region, by selective irradiation of at least one region of the dopant layer with a luminous flux of which the fluence is in a range lower than said threshold, at whic

Abstract: The present invention relates to an optical device for reflective diffraction with high diffraction efficiency and high laser flux resistance. The device includes a protective structure having at least one mixture layer produced by a uniform mixture of a first material and of a second material, where both of these are dielectric, and wherein said first material has an optical index lower than that of the said second material.

Abstract: A method for manufacturing a fin MOS transistor from an SOI-type structure including a semiconductor layer on a silicon oxide layer coating a semiconductor support, this method including the steps of: a) forming, from the surface of the semiconductor layer, at least one trench delimiting at least one fin in the semiconductor layer and extending all the way to the surface of the semiconductor support; b) etching the sides of a portion of the silicon oxide layer located under the fin to form at least one recess under the fin; and c) filling the recess with a material selectively etchable over silicon oxide.

Abstract: The fibre comprises a core (2) having an index N and diameter of 10 ?m or more, surrounded by a ring (4) having an index N+?n and thickness ?R, and cladding (6) surrounding the ring and comprising for example air gaps (8). According to the invention: ?n?10?3 and ?R=?/(?n)? [1] where: 5×10?4 ?m???5×10?2 ?m and 0.5???1.5. The numbers ? and ? are dependent on the wavelength ? of the light guided by the fibre, the number of missing gaps therein, the diameter d of the gaps, the spacing ? thereof and N. To design the fibre, ?, the number of missing gaps, d/?, the core doping content, ?0 and ?n are chosen; and ?R is determined using equation [1] so as to obtain a flattened fundamental mode.

Abstract: Two detectors mounted on footprints (12) and (13) of a plate (5) can be permuted and placed in turn in front of a measuring location set in a plate (1) connected to the plate (5). Concentric sealing joints (24, 25) bound with the plates (1, 5) a closed cavity wherein a vacuum should be created to perform measurements. The joints enable the plate to be mutually moved without sealing loss. The invention is however applicable to any device implying a relative displacement of two parts in front of each other, a stronger pressure existing outside of the parts than between them, which tends to collapse them against each other.