Abstract: A MOS transistor including, above a gate insulator, a conductive gate stack having a height, a length, and a width, this stack having a lower portion close to the gate insulator and an upper portion, wherein the stack has a first length in its lower portion, and a second length shorter than the first length in its upper portion.

Abstract: A method for making patterns on the surface of a substrate by graphoepitaxy, includes depositing a layer of resin on the surface of the substrate; making patterns in the resin on the surface of a substrate; curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; depositing a layer of statistical copolymer after curing the patterns in the resin; grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after curing the patterns and the grafting of the layer of statistical copolymer.

Abstract: A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.

Abstract: A method for fabricating a fuel cell includes fixedly attaching a reinforcement to a proton-exchange membrane and to an electrode placed against a first face of the proton-exchange membrane. The reinforcement has a median aperture through which an interior portion of the electrode is exposed. Fixedly attaching the reinforcement includes superimposing an inner edge of the reinforcement over a periphery of the electrode, and causing a projecting portion of the reinforcement to project the proton-exchange membrane so as to limit gas permeation into the proton-exchange membrane, and forming filigrees by a wet process in a gas diffusion layer, thereby forming a recess therein, and placing the gas diffusion layer so that the inner edge of the reinforcement extends into the recess in the gas diffusion layer.

Abstract: An electronic device for reading at least two acquisition channels, the device including a preamplifier with an inverter for each acquisition channel, and a polarization device shared by at least two of the preamplifiers.

Abstract: Magnetic tweezers have two jaws formed by thin magnetic films connected together via a hinge. The magnetic tweezers include a nanoparticle formed by a stack of thin magnetic films. A process for fabricating the magnetic tweezers by techniques used in the fabrication of microelectronic components is presented.

Abstract: A method for integrating a synthetic hologram in an image of a scene, including: forming, from a first image of the scene, a first matrix including pixels of two shades according to the gray level of the corresponding pixel of the first image, and a second matrix, image of the gray level difference between the corresponding pixels of the first image and of the first matrix; forming a third matrix based on a second image; forming a fourth matrix having each pixel including a central area with a surface area determined by the corresponding element of the second matrix and off-centered in the pixel according to the corresponding pixel of the third matrix; and performing a lithography of an opaque layer at the surface of a plate according to the pattern defined by the fourth pixel matrix.

Abstract: A method for creating a module for controlling a magnetic resonance imaging apparatus antenna, the method including: determining magnetic field distribution mapping B1+; constructing a matrix {tilde over (B)} from the selection of a plurality of x*m points B+1(i,j) such that {tilde over (B)}(i,j)?B+1(i,j) determining the singular vectors of the matrix {tilde over (B)} by singular value decomposition; and arranging a coupling means and/or phase-shifting means, forming said control module, such that a signal Soj outputted from the control module is a function of the equation So j = ? k = 1 n ? ? V k , j · Si k , with Sik being the input signal.

Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.

Abstract: A method for characterising an atomic force microscopy tip using a characterisation structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterisation structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.

Abstract: An organic field-effect transistor includes: source and drain electrodes; a semiconductor layer made of an organic semiconductor material placed at least between said source and drain electrodes; a gate electrode suitable for creating an electric field that increases the density of mobile charge carriers in the semiconductor layer in order to create a conduction channel in this semiconductor layer between the source and drain electrodes when a voltage VG is applied to the gate electrode; and an electrical insulator layer interposed between the gate electrode and the semiconductor layer, characterized in that it further includes a piezoelectric layer placed close to the conduction channel, in the semiconductor layer between the source and drain electrodes or on the opposite side of the gate electrode with respect to the electrical insulator and semiconductor layers, alongside the source and drain electrodes, said piezoelectric layer being electrically isolated from said source and drain electrodes and from the