Abstract: Preventing skin aging by targeting multiple causes by a single bullet is of primal scientific and consumer interest.

Abstract: A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6?X?1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1?y?0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.

Abstract: Provided are a ceramic-fine-particle producing process making it possible to produce, with ease, ceramic fine particles which have a spherical shape close to a complete round and an excellent mono-dispersibility, and are made only of a solid component of a simple ceramic material without making a fine channel structure complicated, and an apparatus used therein for producing ceramic fine particles. The process includes the step (S100) of feeding a dispersion phase made of an aqueous liquid containing a gelling agent to act upon cooling and a ceramic material into a continuous phase made of an oily liquid containing a surfactant, thereby producing fine droplets; the step (S110) of collecting and cooling the produced fine droplets; the step (S120) of washing the cooled fine droplets; the step (S130) of drying the washed fine droplets; and the step (S140) of firing the dried fine droplets.

Abstract: A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

Abstract: A decompression apparatus has an exhaust mechanism for decompressing a vacuum chamber. The exhaust mechanism has a main exhaust passage one end of which is connected to the vacuum chamber and the other end of which is connected to a vacuum pump, a first valve disposed in the main exhaust passage; a slow exhaust passage one end of which is connected to the vacuum chamber directly or via part of the main exhaust passage and the other end of which is connected to the vacuum pump directly or via part of the main exhaust passage, a cylindrical inorganic porous body disposed in the slow exhaust passage so that a gap is formed between the inorganic porous body and the inner surface of the slow exhaust passage, and a second valve disposed in the slow exhaust passage.

Abstract: The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0<x?1); a second buffer layer which is formed on the first buffer layer and is composed of a plurality of first unit layers each having a thickness of from 250 nm to 350 nm and constituted of an AlyGa1-yN single crystal (0?y<0.1) and a plurality of second unit layers each having a thickness of from 5 nm to 20 nm and constituted of an AlzGa1-zN single crystal (0.9<z?1), said pluralities of first and second unit layers having been alternately superposed; and a semiconductor device formation region which is formed on the second buffer layer and includes at least one nitride-based semiconductor single-crystal layer.

Abstract: To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricity to the heating element CW is arranged in the center on the back side of a silica glass plate-like member 2. Connection wires 4a and 4b connected with the heating element CW in the inner area are connected with the heating element in the inner area in the center of the silica glass plate-like member. Connection wires 3a and 3b connected with the heating element in the outer area are extended from the center of the silica glass plate-like member toward the outer area and connected with the heating element CW in the outer area, without intersecting the heating element CW in the inner area.

Abstract: According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.

Abstract: The present invention relates to a ceramics composite including an inorganic material which includes: a matrix phase including a translucent ceramics; and a phosphor phase including YAG containing Ce, in which a content of the phosphor phase is from 22% by volume to 55% by volume based on the whole phase including the matrix phase and the phosphor phase, a content of Ce in the YAG is 0.005 to 0.05 in terms of an atomic ratio of Ce to Y (Ce/Y), and the ceramics composite has a thickness in a light outgoing direction of 30 ?m to 200 ?m.

Abstract: The present invention relates to a cell culture support for culturing mesenchymal stem cells, which includes en upper surface including a plurality of wells, in which the upper surface has a root mean square roughness Rq of 100 to 280 nm and a linear density of 1.6 to 10 per 1 ?m length.

Abstract: Nanofilms useful for filtration are prepared from oriented amphiphilic molecules and oriented macrocyclic modules. The amphiphilic species may be oriented on an interface or surface. The nanofilm may be prepared by depositing or attaching an oriented layer to a substrate. A nanofilm may also be prepared by coupling the oriented macrocyclic modules to provide a membrane.

Abstract: A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.

Abstract: In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

Abstract: The invention relates to an apparatus (1) for preparing a beverage (2) comprising a brew chamber (10) defining a volume for containing at least one container (11) with a soluble or extractable product for preparing said beverage, wherein said apparatus comprises adjustment means (12, 14) for varying the volume (V) of said brew chamber. Preferably the adjustment means include a cover member (12) with a piston portion (25). The invention also relates to a method for preparing a beverage.

Abstract: A suction gripper device comprising a pipe for connecting a suction source to a suction gripper member, the pipe comprising a first channel formed by a downstream chamber (5) and by an upstream duct (7), a seat (9) being provided between the chamber (5) and the duct (7), a valve member (6) being mounted to move with clearance inside the chamber (5) between a bottom abutment (2a, 22) and the seat (9), and a second channel (10) forming a calibrated bypass in parallel with the first channel and bypassing the seat (9), being of section that is smaller than the section (S) of the clearance that exists in the chamber (5) between its inside surface and the outside surface of the valve member (6) that can move therein, wherein the second channel (10) is formed through the center of the valve member (6).

Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10 which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.

Abstract: The invention relates to an apparatus (1) for preparing a beverage (2) comprising a brew chamber (10) defining a volume for containing at least one container (11) with a soluble or extractable product for preparing said beverage, wherein said apparatus comprises adjustment means (12, 14) for varying the volume (V) of said brew chamber. Preferably the adjustment means include a cover member (12) with a piston portion (25). The invention also relates to a method for preparing a beverage.

Abstract: Certain macrocyclic modules comprising 3-24 synthons are provided herein. Each synthon is independently selected from cyclic substituents, wherein each synthon selected is bonded to the next through a linker to form a closed ring that defines a pore. One or more lipophilic moieties and one or more hydrophilic moieties are bonded to one or more of the synthons, resulting in the formation of the desired macrocyclic modules. Those modules may be subsequently linked to one another to form selectively-permeable membranes. Membranes comprising macrocyclic modules may be useful in filtering certain molecular species from a solution. Selective passage of particular species is determined, in part, by the size of the module's pore and the nature of the lipophilic/hydrophobic species attached thereto. Also provided are methods of making and using macrocyclic modules and membranes.

Abstract: The invention relates to a device for controlling the opening and closing of a compressed gas consuming circuit (U), the device comprising a normally-closed two-position cutoff valve (2), said cutoff valve (2) having a pilot chamber (2a) and a counter-pilot chamber (2b) permanently in communication with a source (P) of compressed gas, directly for the pilot chamber (2a) and via a constriction (6) for the counter-pilot chamber (2b), the counter-pilot chamber including a purge branch connection (8) that is opened or closed by a two-position, two-port valve (9).

Abstract: In appropriate setting of magnetic field applied to a molten silicon 12 stored in a cylindrical quartz crucible 11, the maximum value B0 of magnetic flux density on a vertical symmetric axis 17 as a cylindrical axis of the quartz crucible 11 in horizontal magnetic field generated by a pair of exciting coils 13 and 14 calls B0. On circle at which horizontally symmetric plane 18 traversing and perpendicular to a vertically symmetric axis 17 becoming magnetic flux B0 crosses an inner diameter of the quartz crucible 11, the minimum value of magnetic flux density calls Bmin, and the maximum value of magnetic flux density calls Bmax. Those magnetic flux densities B0, Bmin and Bmax are adjusted to be given ranges, and upward flow and temperature of a molten silicon 12 at the lower part of a solid-liquid interface 15a are appropriately controlled.