Abstract: A fixing member for an implant which comprises a tube or a pillar made of an hydroxyapatite ceramics at least one part of which is a ceramics porous article consisting essentially of a hydroxyapatite formed by agitation foaming, in which a number of approximately spherical pores mutually contact having pore structures communicated three-dimensionally opened at the contact area and having an averaged porosity of from 65% to 85%. A method for fixing an implant comprising a step of inserting an implant whose at least one part of the periphery is integrated with a hydroxyapatite ceramics into an implant insertion site of an alveolar bone or a gnathic bone. A method for fixing an implant, a fixing member for the implant and an implant composite in order to reinforce an implant insertion site by compensating or regenerating an alveolar bone or a gnathic bone on an implant treatment in dentistry or in oral surgery is obtained.

Abstract: The present invention provides ceramics for a plasma-treatment apparatus which are excellent in corrosion resistance against a halogen-type corrosive gas, plasma, etc., attain reduction in resistance, and inhibit impurity metal contamination caused by composition materials of these ceramics even in a halogen plasma process, and which can be used suitably for the component of the plasma-treatment apparatus for manufacturing a semiconductor, a liquid crystal, etc. The ceramics are used which are prepared in such a way that 3% by weight to 30% by weight of a cerium oxide relative to yttria and 3% by weight to 50% by weight of niobium pentoxide relative to yttria are added to yttria, which are fired in a reducing atmosphere to have an open porosity of 1.0% or less.

Abstract: An image pickup device disposed in a predetermined position relative to a surface of a strained silicon wafer photographs the surface of the strained silicon wafer in a plurality of rotation angle positions on photographing conditions under which bright lines appearing on the surface of the strained silicon wafer can be photographed, in an environment where a light source device illuminates the surface of the strained silicon wafer which is rotating. A composite image in a predetermined angle position is generated from surface images of the strained silicon wafer in a plurality of rotation angle positions obtained by the image pickup device.

Abstract: The invention intends to obtain a transparent yttrium oxide sintered body of which in-line transmittance in a visible wavelength region of 400 to 800 nm at a thickness of 1 mm is 60% or more, without using aluminum that readily segregates in grain boundaries of yttrium oxide, without using special raw materials in which a silicon content is particularly reduced and without finely pulverizing raw materials. A transparent yttrium oxide sintered body that contains, with yttrium oxide as a main component, at least either one of tantalum or niobium or both thereof and has the in-line transmittance of 60% or more at a thickness of 1 mm in a visible wavelength region in the range of 400 to 800 nm.

Abstract: Nanoflims useful for filtration are prepared from amphiphilic species and one or more polymeric components. The amphiphilic species or components may be oriented on an interface or surface. A nanofilm may be prepared by coupling one or more of the components. The nanofilm may also be deposited or attached to a substrate.

Abstract: A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagnet 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.

Abstract: Certain amphiphilic modules comprising 3-24 synthons are provided herein. Each synthon is independently selected from aryl, heteroaryl, alicyclic, and heteroalicyclic substituents, wherein each synthon selected is bonded to the next through a linker to form a closed ring that defines a nanopore. One or more lipophilic moieties and one or more hydrophilic moieties are bonded to one or more of the synthons, resulting in the formation of the desired amphiphilic modules. Those modules may be subsequently linked to one another to form two-dimensional close-packed planar arrays, referred to as nanomembranes. Nanomembranes may be useful in filtering certain ionic species from a solution. Selective passage of particular species is determined, in part, by the size of the module's nanopore and the nature of the lipophilic/hydrophobic species attached thereto. Also provided are methods of making and using amphiphilic modules and nanomembranes.

Abstract: In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the mirror surface is pushed onto the cloth under the application of a small load with the contact of the mirror surface with a hydrophilicity treatment liquid, thereby making the mirror surface hydrophilic, the hydrophilicity treatment liquid is an aqueous liquid which comprises an organic compound having at least one hydrophilic group and having a molecular weight of 100 or more, a basic nitrogen-containing organic compound and a surfactant, and which has a pH of 9.5 to 10.5.

Abstract: To provide titania-silica glass which is transparent glass of low thermal expansion, in particular, is of a low thermal expansion coefficient over a wide range of temperatures of 0 to 100° C. (an operating temperature range) when it is used as a photomask or a mirror material in extreme ultraviolet ray lithography, and which is excellent in homogeneity within the field and stability. Titania-silica glass is used which has 8 to 10% by weight of titania and 90 to 92% by weight of silica, where a Ti3+ concentration is 10 to 60 ppm by weight.

Abstract: To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crystal devices, particularly in a plasma process apparatus. A yttria sintered body including tungsten of an average particle size of 3 ?m or less dispersed in the yttria so that a ratio of the tungsten relative to the yttria is ranging from 1 to 50% in terms of weight, and having an open pore rate of 0.2% or less and a thermal shock resistance by water submersion method of 200° C. or larger.

Abstract: A method of manufacturing a semiconductor substrate having a DSB structure that enables simplification of a manufacturing process by optimizing a total thickness of oxides on surfaces of two wafers before being bonded together is provided. The method comprises a process of preparing a first semiconductor wafer and a second semiconductor wafer, a process of bonding the first semiconductor wafer and second semiconductor wafer when a total of thickness of an oxide on the surface of the first semiconductor wafer and that of an oxide on the surface of the second semiconductor wafer is 0.4 nm or more and 1.0 nm or less, and a process of providing heat treatment to a semiconductor substrate after the process of the bonding and before a process of thinning one of the wafers.

Abstract: A three-dimensional (micro-) channel structure with an increased length of internal channel is provided, which can be formed without requiring a boring step for vertical hole formation. The channel structure is formed by providing a polyhedral substrate with a groove over at least two faces thereof, preferably through press molding, and covering the faces provided with the grooves with a covering member or another polyhedral substrate to form a continuous internal channel communicative with an ambience through an opening.

Abstract: Nanofilms useful for filtration are prepared from oriented amphiphilic molecules and oriented macrocyclic modules. The amphiphilic species may be oriented on an interface or surface. The nanofilm may be prepared by depositing or attaching an oriented layer to a substrate. A nanofilm may also be prepared by coupling the oriented macrocyclic modules to provide a membrane.

Abstract: A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed.

Abstract: An adhesive composition and tapes utilizing the adhesive compositions are disclosed. A tape utilizing the adhesive composition of the present invention is particularly suitable for use in closure systems associated with air ducts and air connectors. A composition particularly suitable for use as an antioxidant in adhesive compositions is disclosed.

Abstract: The invention relates to an apparatus (1) for preparing a beverage comprising a holder (14) with an inner space (S) for accommodating at least one container (11) with a soluble or ex-tractable product to obtain said beverage, wherein said inner space has a non-planar surface (20) defining at least a first holding structure (21) and a second holding structure (22), respectively arranged to hold containers (11A; 11B) of at least a first dimension (D1) and a second dimension (D2), as defined by an edge (23) of said containers, substantially along said edge of said containers. Accordingly, an apparatus is provided that allows to hold a plurality of containers 11 of different dimensions while maintaining appropriate extraction characteristics.

Abstract: A surface inspection apparatus, for inspecting a plurality of surfaces formed in a peripheral edge portion of a plate-like object, includes a image pickup mechanism, which photographs the peripheral edge portion of the plate-like object having a plurality of surfaces, and an image processing device, which processes an image obtained by the photographing device. The image pickup mechanism includes an optical system which guides images of the plurality of surfaces of the plate-like object in one direction, and a camera unit having an image pickup surface, on which the images of the plurality of surfaces guided by the optical system in the one direction are formed.

Abstract: A semiconductor substrate whose surface roughness is reduced by optimizing an inclination (off angle) with respect to a {110} surface of the semiconductor substrate surface and a manufacturing method thereof are provided. The surface of the semiconductor substrate has the inclination (off angle) of 0 degree or more and 0.12 degrees or less, or 5 degrees or more and 11 degrees or less, preferably 6 degrees or more and 9 degrees or less with respect to the {110} surface. The manufacturing method of a semiconductor substrate has a process in which a semiconductor single crystal ingot is sliced at an inclination (off angle) of 5 degrees or more and 11 degrees or less, preferably 6 degrees or more and 9 degrees or less with respect to the {110} surface.

Abstract: By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.

Abstract: A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 ?m or more and 3 ?m or less.