Abstract: Light emitting diode (LED) devices and systems include a superstrate (e.g., a light-transmissive layer), LEDs attached to the superstrate at a die-attach layer formed thereon, and an encapsulant layer formed over and/or around the LEDs with a non-reflective or clear material. A method for producing LED devices and systems includes providing a superstrate with a die-attach layer formed thereon, attaching LEDs to the superstrate at the die-attach layer, forming conductive surfaces on a side of the LED opposite the die-attach layer, dispensing an encapsulant layer to at least partially encapsulate the LEDs, and forming one or more metal traces to electrically interconnect the conductive surfaces of at least some of the LEDs with each other.

Abstract: Light emitting diode (LED) components and related methods are disclosed. LED components include a submount, at least one LED chip on a first surface of the submount, and a non-reflective, light permeable structure or dam. The light permeable dam can provide a component having a viewing angle that is greater than 115°. A method of providing an LED component includes providing a non-metallic submount, attaching at least one LED chip to a first surface of the submount, and dispensing a non-reflective, light permeable dam over the first surface of the submount about the at least one LED chip thereby providing a component having a viewing angle that is greater than 115°.

Abstract: Light engine modules comprise a support member and a solid state light emitter, in which (1) the emitter is mounted on the support member, (2) a region of the support member has a surface with a curved cross-section, (3) the emitter and a compensation circuit are mounted on the support member, (4) an electrical contact element extends to at least two surfaces of the support member, and/or (5) a substantial entirety of the module is located on one side of a plane and the emitter emits light into another side of the plane. Also, a module comprising means for supporting a light emitter and a light emitter. Also, a lighting device comprising a housing member and a light emitter mounted on a removable support member. Also, a lighting device comprising a module mounted in a lighting device element. Also, a method comprising mounting a module to a lighting device element.

Abstract: A power module includes a number of sub-modules connected via removable jumpers. The removable jumpers allow the connections between one or more power semiconductor die in the sub-modules to be reconfigured, such that when the removable jumpers are provided, the power module has a first function, and when the removable jumpers are removed, the power module has a second function. The removable jumpers may also allow for independent testing of the sub-modules. The power module may also include a multi-layer printed circuit board (PCB), which is used to connect one or more contacts of the power semiconductor die. The multi-layer PCB reduces stray inductance between the contacts and therefore improves the performance of the power module.

Abstract: Aluminum high bay lighting fixtures a primary housing; at least one secondary housing partially surrounding a primary housing; a plurality of light emitting elements in thermal contact with the primary housing; a heat spreader plate in thermal contact with the light emitting elements and the primary and secondary housings. At least one of the primary and secondary housings include openings to help dissipate heat from the light source and/or allow at least some of the light from the light emitting elements to be outputted in a direction opposite the main light emitting direction. The shortest distance from a distal end of the primary housing to the light sources is greater than the shortest distance from a distal end of the secondary housing to the light sources.

Abstract: Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract: Light emitting diode (LED) devices, components and systems are provided. Improved substrates for LEDs and LED devices are provided, with one or more dielectric layers over a reflective layer sufficient to minimize or eliminate damage of the dielectric layer(s). More stable and efficient LED devices can be produced using such improved substrates. LED devices, and methods of making the same, are also provided wherein LED chips are embedded in fill material to attach the LEDs to a substrate and increase light reflectivity.

Abstract: Light emitting diode (LED) devices, components and systems are provided. LED devices include a submount with a plurality of LEDs disposed thereon. The LEDs mounted on a submount can be spaced apart at predetermined dimensions to control the gaps between each of the plurality of LEDs. By controlling the gaps between LEDs the optical output from the LED device can be optimized, including improving emission and/or color uniformity, minimizing or eliminating deadspots in the light emission, and/or minimizing or eliminating an optical cross. A phosphor layer can be disposed on the plurality of LEDs and between the LEDs in the gaps therebetween.

Abstract: A metal heat slug having an upper and lower surface is provided. First and second electrically conductive leads are provided. First and second electrically insulating fastening mechanisms are provided. The first and second fastening mechanisms are adhered to the upper surface of the heat slug in an outer peripheral region of the heat slug such that the first and second leads are vertically separated from and electrically insulated from the heat slug. The central die attach region is exposed from the first and second fastening mechanisms after adhering the first and second fastening mechanisms to the upper surface of the heat slug.

Abstract: The present invention is directed to leadless LED packages and LED displays utilizing white ceramic casings and thin/low profile packages with improved color mixing and structural integrity. In some embodiments, the improved color mixing is provided, in part, by the white ceramic package casing, which can help reflect light emitted from each LED in many directions away from the device. The non-linear arrangement of the LEDs can also contribute to improved color-mixing. The improved structural integrity can be provided by various features in the bond pads that cooperate with the casing for a stronger package structure. Moreover, in some embodiments the thinness/low profile of each package is attributed to its leadless structure, with the bond pads and electrodes electrically connected via through-holes.

Abstract: LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with curved and planar surfaces. The packages can comprise a submount with a one or a plurality of LEDs, and in those with a plurality of LEDs each of the LEDs can emit the same or different wavelengths of light than the others. A blanket conversion material layer can be included on at least some of the LEDs and the submount. The encapsulant can be on the submount, over at least some of the LEDs, with each of the planar surfaces being vertical and aligned with one of the edges of the submount. The packages can also comprise reflective layers to minimize losses due to light absorption, which in turn can increase the overall package emission efficiency.

Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the <1120> direction of a hexagonal crystal structure of a material of the substrate.

Abstract: A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.

Abstract: A luminaire includes a first waveguide having a first primary light emitting surface directed in a first direction and a first secondary light emitting surface directed in a second direction. A second waveguide having a second primary light emitting surface directed in the second direction and a second secondary light emitting surface directed in the first direction. A first plurality of LEDs are optically coupled to the first waveguide and a second plurality of LEDs are optically coupled to the second waveguide. The first and second waveguides are independently operable. The first and second plurality of LEDs may comprise LED groups where each of the LED groups are independently controllable. The light emission pattern and light properties of the emitted light are controllable.

Abstract: Light emitting diode (LED) devices and methods. An example apparatus can include a substrate, one or more LEDs, light-transmissive encapsulation material, and a reflective material covering a portion of the encapsulation material to form a defined opening. The opening allows light emitted from an LED to pass through in a prescribed manner. In some embodiments, the apparatus can be subsequently treated to modify the surface having the opening. In other embodiments, the reflective material can be disposed on a lateral surface of the encapsulation material to reflect light in a desired direction.

Abstract: Lighting devices and methods utilize multiple independently controllable groups of solid state light emitters of different dominant wavelengths, with operation of the emitter groups being automatically adjusted by processor(s) to provide desired illumination. Operation of the emitter groups may be further affected by sensors and/or user input commands (e.g., sound patterns, gesture patterns, or signal transmission). Operation may be adjusted to compensate for presence, absence, intensity, and/or color point of ambient or incident light. Presence of five or more groups of solid state light emitters provide desirable luminous flux, color point, correlated color temperature (CCT), color rendering index (CRI), CRI R9, and luminous efficacy characteristics of aggregate emissions over a wide range of CCT values, and may permit adjustment of vividness (e.g., relative gamut) and/or melatonin suppression characteristics for a selected color point or CCT.

Abstract: An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

Abstract: A stabilized quantum dot composite includes a plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising an ionic metal oxide. A method of making a stabilized quantum dot composite includes forming a mixture comprising a plurality of luminescent semiconducting nanoparticles dispersed in an aqueous solution comprising an ionic metal oxide. The mixture is dried to form a stabilized quantum dot composite comprising the plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising the ionic metal oxide.

Abstract: A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.