Abstract: A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.

Abstract: Packaged transistor devices are provided that include a transistor on a base of the packaged transistor device, the transistor comprising a control terminal and an output terminal, a first bond wire electrically coupled between an input lead and the control terminal of the transistor, a second bond wire electrically coupled between an output lead and the output terminal of the transistor, and an isolation material that is and physically between the first bond wire and the second bond wire, wherein the isolation material is configured to reduce a coupling between the first bond wire and the second bond wire.

Abstract: Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a gate finger extending on the semiconductor structure in a first direction, and a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, where the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: A transistor device includes a semiconductor structure, a plurality of gate fingers extending on the semiconductor structure in a first direction, a plurality of gate interconnects that each have a first end and a second end extending on the semiconductor structure in the first direction, wherein each gate interconnect is connected to a respective gate finger by a plurality of first conductive vias, and a plurality of gate runners extending on the semiconductor structure in the first direction. At least one gate interconnect of the gate interconnects is connected to one of the gate runners by a second conductive via at an interior position of the at least one gate interconnect that is remote from the first end and the second end of the at least one gate interconnect.

Abstract: Stabilized luminescent nanoparticles for light emitting diode applications comprise perovskite nanocrystals encapsulated by an oxide coating, where the oxide coating includes ligand remnants comprising one or more elements selected from the group consisting of: nitrogen, carbon, phosphorus, and sulfur. A method of making the stabilized luminescent nanoparticles comprises dispersing perovskite nanocrystals and crosslinking ligands in a non-polar solvent to form a first mixture. Each of the crosslinking ligands comprises a head end and a tail end; the head ends attach to the perovskite nanocrystals and the tail ends remain unattached and available for crosslinking. An oxide precursor comprising crosslinking functional groups is added to the first mixture, and the crosslinking functional groups attach to the tail ends of the crosslinking ligands. Thus, an oxide coating is formed on the perovskite nanocrystals.

Abstract: A semiconductor device includes a metal base, a transistor die mounted on the metal base, a lid over the transistor die, and a multilayer printed circuit board electrically connected to the transistor die. The multilayer printed circuit board comprises a first portion positioned between the lid and the metal base, a second portion positioned outside of the lid, a plurality of embedded conductive layers, an embedded dielectric layer disposed between at least two of the plurality of embedded conductive layers, and at least one embedded reactive component formed from at least one of the embedded conductive layers.

Abstract: Pixelated-LED chips and related methods are disclosed. A pixelated-LED chip includes an active layer with independently electrically accessible active layer portions arranged on or over a light-transmissive substrate. The active layer portions are configured to illuminate different light-transmissive substrate portions to form pixels. Various enhancements may beneficially provide increased contrast (i.e., reduced cross-talk between pixels) and/or promote inter-pixel illumination homogeneity, without unduly restricting light utilization efficiency. In some aspects, a light extraction surface of each substrate portion includes protruding features and light extraction surface recesses. Lateral borders between different pixels are aligned with selected light extraction surface recesses. In some aspects, selected light extraction surface recesses extend through an entire thickness of the substrate. Other technical benefits may additionally or alternatively be achieved.

Abstract: A device for an LED has a substrate and a circuit on the substrate configured to accept the LED. The circuit includes a first set of electrical traces terminating at a first set of solder pads for a first sized LED, a second set of electrical traces terminating at a second set of solder pads for a second sized LED different from the first sized LED, and peripheral electrical traces for electrically interconnecting electrical traces of the first set of electrical traces or between electrical traces of the second set of electrical traces. Connection components electrically interconnect the first set of electrical traces with each other or the electrical traces of the second set of electrical traces with each other, respectively, at corresponding solder pads. The device is configurable to provide a first voltage and a second voltage to the LED.

Abstract: The base of an integrated circuit package comprises a first side, and a second side opposing the first side. The base further comprises, a base mounting section, a die mounting section, and a recessed section. The recessed section comprises a recess between the die mounting section and the base mounting section. The base further comprises an opening extending through the base from the first side to the second side. At least a portion of the recess intersects with the opening.

Abstract: Light emitting diodes, components, and related methods, with improved performance over existing light emitting diodes. In some embodiments, light emitter devices included herein include a submount, a light emitter, a light affecting material, and a wavelength conversion component. Wavelength conversion components provided herein include a transparent substrate having an upper surface and a lower surface, and a phosphor compound disposed on the upper surface or lower surface, wherein the wavelength conversion component is configured to alter a wavelength of a light emitted from a light source when positioned proximate to the light source.

Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.

Abstract: A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.

Abstract: Light emitter devices, components and methods are disclosed. In one aspect, a light emitter component of a light emitter device is disclosed. The light emitter component can include a silver (Ag) portion at least partially disposed over a surface of the component. The component can further include a protective layer at least partially disposed over the Ag portion, the protective layer at least partially including an organic barrier material that increases or improves chemical resistance of the Ag portion. In some aspects, the protective layer includes a polyxylylene (e.g., poly(p-xylylene), a substituted poly(p-xylylene), a fluorocarbon containing poly(p-xylylene), and/or any other polymer prepared from a xylylene and/or comprising —CH2—(C6H4)—CH2— based repeating units. In some aspects, the protective layer includes Parylene.

Abstract: Solid state lighting components are provided with improved color rendering, improved color uniformity, and improved directional lighting, and that are suitable for use in high output lighting applications and can be used in place of CDMH bulb lighting. Exemplary solid state lighting components include a substrate comprising a light emitter surface and or more light emitters disposed on and/or over the light emitter surface. Exemplary components include a light directing optic and/or a diffusing optic for mixing light. The light directing optic may be disposed at least partially around a perimeter of the light emitter surface. The diffusing optic may be disposed between portions of the light directing optic and spaced apart from the light emitter surface.

Abstract: A stabilized fluoride phosphor for light emitting diode (LED) applications includes a particle comprising manganese-activated potassium fluorosilicate and an inorganic coating on each of the particles. The inorganic coating comprises a silicate. A method of making a stabilized fluoride phosphor comprises forming a reaction mixture that includes particles comprising a manganese-activated potassium fluorosilicate; a reactive silicate precursor; a catalyst; a solvent; and water in an amount no greater than about 10 vol. %. The reaction mixture is agitated to suspend the particles therein. As the reactive silicate precursor undergoes hydrolysis and condensation in the reaction mixture, an inorganic coating comprising a silicate is formed on the particles. Thus, a stabilized fluoride phosphor is formed.

Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

Abstract: Light emitting diode (LED) apparatuses and methods having a high lumen output density. An example apparatus can include a substrate with one or more LEDs enclosed by an encapsulant. The encapsulant comprises beveled edges and/or top surface facets. By providing facets in the encapsulant and minimizing the chip-to-area ratio through efficient via placement, a high lumen density is achieved. Facets and bevels can be created by removing material from the encapsulant with a beveled blade.