Abstract: A method and system for initiating the oscillation of a crystal that controls a crystal oscillator by applying an initiating pulse to said crystal. The initiating pulse having a pulse width less than one half the periodicity of said crystal.

Abstract: A multi-node time division multiplexing (TDM) system is disclosed. The improved method and apparatus utilizes an asynchronous synchronization packet (ASP) to synchronize the timing in all the nodes of the system. In some embodiments, the ASP also maps the time slots in a data frame to particular nodes. The ASP is sent at the start of each data frame to all the nodes in the system and each node synchronizes itself to the time of receipt of the ASP, thus establishing frame-based timing for all the nodes. Additionally, the ASP can contain a table that maps the data frame time slots to the nodes in the system.

Abstract: A circuit and method for providing a periodic clock signal, such as a high frequency clock signal. In one example, the circuit may include a phase locked loop circuit having a voltage controlled oscillator, the voltage controlled oscillator having a voltage input, a calibration input, and a clock signal output; and a logic circuit for dynamically calibrating an operating frequency of the phase locked loop during operation of the phase locked loop. In one embodiment, the logic circuit may compare an input voltage into the voltage controlled oscillator against a reference voltage, and if the input voltage is lower than the reference voltage, the logic circuit decreases the operating frequency of the phase locked loop circuit. The logic circuit may compare an input voltage into the voltage controlled oscillator against a reference voltage, and if the input voltage is higher than the reference voltage, the logic circuit increases the operating frequency of the phase locked loop circuit.

Abstract: A phase shift apparatus, system and method are described herein for synchronizing output signals upon one or more components of a synchronous system. In one embodiment, the phase shift apparatus may be implemented as a clock generation circuit, which is configured to provide synchronous clocking signals to one or more components of the synchronous system. In another embodiment, the phase shift apparatus may be implemented as a data interface circuit, which is configured to provide error-free data transmission within a synchronous system. In either embodiment, the phase shift apparatus is configured to shift the plurality of signals by programmable first phase shift amounts prior to shifting the plurality of signals by programmable second phase shift amounts. As such, the phase shift apparatus is adapted to substantially eliminate clock skew, data skew and/or jitter, which may otherwise adversely affect the synchronous system.

Abstract: In an embodiment, a signature area and virtual keypad, among other display elements, are displayed in more than one location on a touch screen display. As a result, wear and tear may be strategically distributed evenly across the touch screen, instead of isolated to fixed locations, thus increasing the touch screen's useful lifetime. Display degradation is detected in a novel embodiment from physical parameters that are conventionally used for the touch screen's touch sensitivity. By detecting the display degradation according to display location, display elements can be strategically located to enhance the life of the touch screen.

Abstract: A system and method are provided for built-in-self test of any bits that have slipped from their appropriate positions within a frame character clock cycle. If a bit has slipped, then the built-in-self test mechanism can also implement either a clock generation stretch operation or a barrel shift operation to readjust the frame boundary output from a receiver with a 1-to-N deserializer. A pseudo-random bit sequence can be generated having the same logic value in both the receiver and transmitter, where the output of the deserializer which receives the transmitted bits is compared bit-by-bit with the receiver-generated bits as part of the built-in-self test mechanism. If a bit is determined to have been slipped, then error correction occurs with aliasing and phase jitter in mind.

Abstract: Disclosed herein is a current sense amplifier (ISA) circuit with increased speed, less insensitivities to process variation, better stability and improved output signal swing. According to one embodiment, the ISA circuit described herein may include a pair of output nodes and a first pair of load transistors, each coupled between a different one of the output nodes and ground for pulling the output nodes down to a first voltage value at the beginning of a sense cycle. In addition, a pulse generation circuit is included for activating the first pair of load transistors at the beginning of the sense cycle and deactivating the first pair of load transistors once the first voltage is reached. When activated, the first pair of load transistors provide a relatively low resistance current path between the output nodes and ground. This decreases the output node discharge time and increases the overall speed of the sense amp without compromising circuit stability and output swing.

Abstract: An improved clock recovery system, phase-locked loop, and phase detector are provided as well as a method for generating charge pump signals. The clock recovery system includes a phase-locked loop. The phase-locked loop includes a phase detector and a voltage-controlled oscillator. The phase detector generates pump signals that change linearly with respect to differences between phases of an incoming signal and a clocking signal. The oscillator is coupled to receive the pump signals and produce a clocking signal at a frequency not exceeding the frequency of the incoming signal. For example, the oscillator can produce clocking signals at one-half the frequency of the incoming signal, where the incoming signal is preferably a maximum bit rate of a data signal from which the clock signal is recovered. The phase detector can include a first flip-flop and second flip-flop.

Abstract: An architecture for an improved non-volatile memory device supporting multiple memory interface options is disclosed herein. In one embodiment, the improved memory device includes a magnetic random access memory (MRAM) array and at least one memory interface block, which is configured for accessing a different type of memory array other than the MRAM array. A smart MRAM interface block is also included and coupled between the plurality of memory interface blocks and the MRAM array. The smart MRAM array is configured for accessing the MRAM array using commands intended for the MRAM array, as well as commands intended for the different type of memory array. A method for operating the improved non-volatile memory device is also disclosed herein.

Abstract: A low voltage, high-gain current/voltage sense amplifier (ISA/VSA) circuit with improved read access time is provided herein. According to one embodiment, the ISA/VSA described herein includes a pair of current reference branches for generating a pair of reference currents in response to a pair of differential input signals supplied thereto. The differential input signals are differential voltages which are converted to differential currents by the current reference branches. In some cases, the current reference branches may be used for amplifying and mirroring the reference currents onto output nodes of the ISA/VSA. In doing so, the current reference branches may increase the amplification and improve the performance of the sense amp circuit, even under extreme mismatch conditions. In addition, positive feedback may be used within the ISA/VSA design to further increase the amplification and speed of the sense operation.

Abstract: A frequency synthesizer is provided having a fractional-N control circuit and method. The control circuit can operate as having a modulator that selectively applies any fractional ratio to a frequency divider within, for example, a feedback loop of a PLL. The modulator can be a delta-sigma modulator or any sequential state machine that can be implemented as the control circuit, and can select amongst a plurality of vector values. The vector values can be spaced relatively close to each other, and the incoming present vector values can each be added to a value chosen from the immediately preceding set of potential values. The selector circuit chooses from among the present set of vector values depending on whether the sum is nearest a target value. The sum nearest the target value is, therefore, selected as the present vector value, and the process is repeated in time for each vector value having a corresponding P value to form a pattern of P values sent to the divider of the PLL.

Abstract: An apparatus, method, and system for coupling a host computer to a peripheral device over an extended distance. In one example, a first hub is provided for coupling with the host computer, the first hub configured as a compound device including a hub function and an embedded function, the first hub configured such that the embedded function is a virtual hub thereby providing an additional amount of time for signal transmissions by the first hub. A communications link is provided for coupling the first hub with the peripheral device, the characteristics of the communications link being based in part on the additional amount of time made available by the configuration of the first hub.

Abstract: Output driver circuits and related methods. In one example, the output driver circuit includes a translator for converting the single ended data input signal into a pair of signals; a set of output transistors selectively controlled by the pair of signals; a cascode current source for providing a substantially constant current to the set of output transistors when the output transistors are active; and a dump path in parallel with the set of output transistors. A circuit portion for pre-charging the pair of signals to a pre-charged voltage between VCC and ground may also be provided.

Abstract: A circuit for generating a reference current, comprising a positive feedback loop, a negative feedback loop, and a floating current mirror coupled to the positive feedback loop. The negative feedback loop may operate to divert current directly from the floating mirror, and may also operate to divert current from the floating mirror by using a voltage follower. The circuit may operate with a minimum supply voltage of approximately the sum of the threshold voltage of a transistor plus three drain saturation voltages, in one example.

Abstract: A method is provided which includes forming a hardmask feature adjacent to a patterned sacrificial structure of a semiconductor topography, selectively removing the patterned sacrificial structure to expose a lower layer and etching exposed portions of the lower layer in alignment with the hardmask feature. In some embodiments, forming the hardmask feature may include conformably depositing a hardmask material above the patterned sacrificial structure and lower layer as well as blanket etching the hardmask material such that upper surfaces of the patterned sacrificial structure and portions of the lower layer are exposed and portions of the hardmask material remain along sidewalls of the patterned sacrificial structure. The method may be applied to produce an exemplary semiconductor topography including a plurality of gate structures each having a width less than approximately 70 nm, wherein a variation of the widths among the plurality of gate structures is less than approximately 10%.

Abstract: An improved memory interface circuit is provided for accessing a storage array in one of two available modes, including a synchronous mode and an asynchronous mode. The improved memory interface circuit also includes logic, which enables the storage array to reside within substantially any clock domain.

Abstract: A lock-aid circuit and method is applied to a phase lock loop (PLL) having a voltage controlled oscillator (VCO), wherein the lock aid is coupled with the input of the VCO. In one example, the lock aid includes a Schmitt trigger having an output, a switch having an output and an input coupled to the output of the Schmitt trigger, and a voltage controlled current source coupled with the output of the switch.

Abstract: A method and apparatus for creating USB peripheral device report descriptors: A short, compressed, report descriptor is stored in a peripheral device. This short report descriptor is transmitted to a USB wireless bridge and combined with templates stored in the bridge to create a USP report descriptor. Power is saved because less time is required to transmit the short report descriptor than would be required to transmit a full USB report descriptor. Hardware is also saved in the peripheral device since less memory is required to store the short report descriptors as compared to storing a full USB report descriptor.

Abstract: A multiplexer circuit provided herein includes a plurality of pass devices coupled in parallel between a power supply and a ground supply. According to one embodiment, each pass device may include a first pair of transistors, which is coupled in series between the power supply and the ground supply, and a second pair of transistors, which is coupled to the first pair of transistors for controlling a current passed there through. In general, the second pair of transistors may be configured for increasing the amount of current passed through the first pair of transistors. For example, the second pair of transistors may utilize a bootstrapping effect to increase a pair of control voltages supplied to the gate terminals of the first pair of transistors. The increased control voltages function to over-drive the gate terminals of the first pair of transistors, thereby increasing the amount of current passed there through.

Abstract: Memory circuits having different configurations of local word line driving circuits (LWLDC) and methods for designing such circuits are provided. The memory circuits include an array of memory cells and a plurality of local word lines each coupled to a different subset of the array of memory cells. The memory circuit further includes a plurality of LWLDC respectively coupled to the plurality of local word lines, a global word line bus coupled to the plurality of LWLDC, and a global word line driving circuit (GWLDC) coupled to the global word line bus. At least one of the plurality of LWLDC may be configured to have a smaller amount of load capacitance than another LWLDC arranged comparatively farther from the GWLDC. In some embodiments, the variance of load capacitance may be induced by a variance of size among the plurality of LWLDC, specifically with reference to different transistor width dimensions.