Abstract: An arrangement for monitoring a two-wire bus line for serial transmission of digital data includes a bus subscriber receiving circuit coupled to the two-wire line and including three comparators each having two inputs and an output for producing a logical output signal in dependence of signals at the two inputs. A signal line voltage on each wire of the two-wire bus line is applied, respectively, to the two inputs of a first one of the comparators and one of the two signal line voltages, an auxiliary voltage is applied, respectively, to the two inputs of a second one of the comparators and the other of the two signal line voltages and an auxiliary voltage being applied, respectively, to the two inputs of a third one of the comparators.

Abstract: A method and a system meters a supply of methanol and/or water out of a storage reservoir to a fuel-cell system by way of a conveying conduit with a metering valve. A constant mass flow is conveyed out of the storage reservoir into the conveying conduit via a conveying pump. The differential pressure between the conveying conduit and fuel-cell system is set at a predetermined value via a differential-pressure controller which is arranged in a return conduit provided between the conveying conduit and storage reservoir. The methanol and/or water supplied can be set, for example, by varying the opening and closing times of a solenoid valve. A second metering stage can be provided in the return conduit downstream of the first metering stage. When two separate metering systems are used, a common pump motor can be employed.

Abstract: A semiconductor component with at least one lateral semiconductor structure with a high breakdown voltage including a substrate, a dielectric layer adjoining the substrate, a low-doped semiconductor zone disposed on the dielectric layer and heavily doped semiconductor zones of the semiconductor component which project into the low-doped semiconductor zone from the direction of the outer surface of the semiconductor component. Fixed charges, which reduce the electrical field strength in the blocking component of the lateral structure, are embedded inside the dielectric layer adjoining the substrate at least opposite that area of the low-doped semiconductor zone which, in the blocking state of the semiconductor component, has a high voltage in respect to the substrate.

Abstract: SiC field-effect transistors with source, gate and drain contacts and in which the source contacts are located on the surface of the semiconductor wafer, the drain contacts on the underside of the wafer and the gate contacts in trench-like structures. The trench-like structures surround the source electrodes of the transistors in the shape of a ring and the gate contacts are connected to each other on the floors of the trenches.

Abstract: A power semiconductor component which can be turned off by gate control and whose semiconductor body has a plurality of unit cells arranged side by side which are comprised of a p-emitter region (1) adjacent to the anode, an adjoining lightly doped n-base region (2), followed by a p-base region (3) and an n-emitter region (4) embedded therein and which unit cells form a thyristor structure. At least one p-region (5) is embedded in the n-emitter region (4) of the unit cells, with the p-region forming a ballast resistor and being provided with two ohmic contacts, one of which forms the outer cathode metallization (K), which has no contact with the n-emitter region (4), and the other of which is a floating contact (K') which simultaneously contacts the n-emitter region (4) ohmically.

Abstract: The invention concerns a field-effect controlled semiconductor component with at least four regions of alternating opposite performance types: an anode-side emitter region, a first and a second base region connected to the emitter region, and a cathode-side emitter region; the cathode-side emitter region and the first base region from the source and drain of an MOS field effect transistor. The component also comprises an anode contact, a contact at the cathode-side emitter region and a control electrode contact of the MOS field effect transistor. The invention lies in the fact that a p+ region (36) which is adjacent to the cathode-side base region, separate, and accomodated in the anode-side n- base region (20), is connected via a separate component as a coupling element (80) with non-linear current/voltage characteristics to the cathode contact, the said region (36) being directly surrounded by the anode-side base region (20).

Abstract: A transmit-receive switch which can be integrated. The receive diplexer of the switch comprises a parallel resonant circuit which can be completed or connected into the switch via a heterobipolar transistor. The transmit diplexer includes a series resonant circuit or a parallel resonant circuit which is connected into the switch circuit via a further heterobipolar transistor. Each of the heterobipolar transistors is rendered conductive or non-conductive via the applied HF power. That is, a high HF power, as is present in the transmission case, causes the respective transistor to become conductive and via the respective resonant circuits, cause the receive diplexer to become high impedance and block any signal, and cause the transmit diplexer to become low impedance and pass the high HF power substantially undampened.

Abstract: The invention pertains to a process for producing integrated active-matrix liquid crystal displays with a checkered silicon die subdivided into picture elements. Each picture element consists of a light-controlling element and an integrated, driving electronic switching element (20) which drives the translucent electrode (16) of the picture element. The array of picture elements is covered with glass layers (6, 12) with polarizing and analyzing layers on their outer faces. The invention in characterized in that the switching elements are integrated into a transparent silicon layer in which optic windows for the lighting-controlling elements are integrated. This is done by etching out a cavity in the rear side of the silicon die in the region of the liquid crystal display, leaving a thin layer of silicon or no silicon at all in the region of the optic window. On the thicker frame (10) of the silicon die there is a drive circuit.

Abstract: In a process for contactless energy transmission in charging the battery of a vehicle, in particular an electric car, by means of an inductive transmitter having a primary element (1) and a secondary element (2) which is attached to the vehicle, the secondary element (2) is made freely accessible and the primary element is power driven to move in all three spatial coordinates within a predetermined spatial area. In this process the primary element (1) and the secondary element (2) are placed, under sensor control, in predetermined positions relative to each other and then electrical energy is transmitted in the medium frequency range by means of the inductive transmitter.

Abstract: A method and an apparatus are provided for controlling the power of an electric drive unit in a vehicle. The drive unit is supplied with electrical energy by a fuel cell in the vehicle. On the basis of a power request which is determined from the accelerator pedal position, the air flow rate required to provide the set power from the fuel cell is calculated and set by controlling rotational speed of a compressor arranged in the air intake line to the fuel cell. To prevent the fuel cell from producing more electrical power than the drive unit can absorb, the drive unit acts limits the power request by emitting appropriate error messages. The set value for the power is fed to the drive unit and can be corrected such that the drive unit never demands more power than the amount of power instantaneously produced by the fuel cell to prevent fuel cell collapse.

Abstract: In a goniometer having several axes around which a crystal specimen to be examined can be rotated, a radiation source, a detector for Bragg reflections and a detector for fluorescence radiation, with the detector making it possible to measure lattice geometry and chemical composition at the same time. The detector for the fluorescence radiation is secured in a holder, and is oriented with its surface parallel to the specimen and is pivotably secured together with the specimen to the specimen table. As such, reflexes can be simultaneously observed using the Bragg detector which is secured in a pivotable arm, and the fluorescence radiation using the fluorescence detector.

Abstract: A method is provided for forming a semiconductor device including a semiconductor body having a first surface and a second surface located opposite the first surface, with a plurality of vertical semiconductor components extending between the first and second surfaces. At least one partial structure having a lateral semiconductor component is disposed beneath the first surface. An electrically-insulating vertical wall surrounds the partial structure and extends into the semi-conductor body a predetermined depth from the first surface. The second surface of the semiconductor surface of the semiconductor body includes a recess in the region of the partial structure. The bottom of the recess extends to the vertical wall at the predetermined depth from the first surface. An insulating layer covers the bottom of the recess.

Abstract: A field-effect-controlled semiconductor device has a cathode, an anode, and a gate, and extends laterally on a first insulating layer covering a substrate. The device includes a main thyristor, a MOSFET switch and a diode which connects a highly doped region embedded in a first part of a second base region of the thyristor to the cathode of the device.

Abstract: The present invention relates to a heterostructure yield effect transistor with high charge carrier mobility and velocity wherein the current carrying channel has only a narrow pulse doped region that is disposed on the side of the channel layer opposite the heterojunction. At positive gate voltages the remainders of the doping substance are spatially separated from the free charge carriers so that the free charge carriers exhibit transporting characteristics as they are encountered in the undoped channel but with a substantially higher saturation current.

Abstract: A semiconductor photodetector has a channel of conductive material which connects two terminal poles and is defined by potential barrier regions and by space-charge regions that can be reduced by means of incident light. The channel is comprised of a conductive layer parallel to the surface and having laterally narrowing barrier regions extending through the layer.

Abstract: A method and an apparatus reduces particles in exhaust gases of an internal combustion engine by passing the exhaust gases through a microwave energy field in a resonator for applying energy and burning the particles. In order to improve the application of energy, the particles are agglomerated beforehand in a high-voltage field of an electrostatic filter.

Abstract: A planar waveguide structure for mm-wave transmitters and receivers. The active semiconductor component elements and the planar waveguide with which they are connected of the transmitters and/or receivers are arranged on the front side of a semiconductor substrate. The rear side or surface of the semiconductor substrate is at least partially formed as an inwardly or outwardly radiating surface and is geometrically shaped such that an electromagnetic property incident or emanating radiation is altered in a predetermined manner.