Abstract: Disclosed is an amplifier capable of minimizing shortcircuit current of an output stage of a buffer upon transition of an output voltage while having a high slew rate without increasing power consumption. The amplifier includes an input unit, a conversion unit, an amplification unit, a frequency compensation circuit, and a short-circuit current minimization circuit. Alternatively, the amplifier includes an input unit, a conversion unit, an amplification unit, a frequency compensation circuit, a short-circuit current minimization circuit, and a slew rate improvement circuit.

Abstract: A super junction semiconductor device includes a substrate of a first conductive type, an epitaxial layer disposed on the substrate, a plurality of pillars extending in a vertical direction and each being alternately arranged within the epitaxial layer, gate structures disposed on the epitaxial layer in the active region, a reverse recovery layer of a second conductive type, the reverse recovery layer disposed on both the pillars and the epitaxial layer and in the transition region to distribute a reverse recovery current, and at least one high concentration region surrounding an upper portion of at least one of the pillars in the peripheral region, the high concentration region having a horizontal width greater than that of one of the pillars provided in the transition region. Thus, a breakdown voltage may be inhibited from decreasing in the peripheral region.

Abstract: An ESD protection device (100) is disclosed. More particularly, the ESD protection device is configured so that a gate electrode (140) and a capacitor electrode (170) electrically connected to a drain region (162) are spaced apart from each other by a preset distance, and partially or entirely overlap each other, thereby increasing a capacitance (Cgd) between the gate electrode and the drain region.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

Abstract: An RF switch device and a method of manufacturing the same are proposed. A trap area is formed in or on a surface of a highly resistive substrate to trap carriers accumulating on the surface of the substrate, thus improving RF characteristics.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device that reduces or eliminates a voltage imbalance by implementing at least one stage in a stacked switch device with a different width, and thus the voltage applied to each stage in the OFF state may be more equally distributed among the individual stages.

Abstract: An ESD protection device (100) is disclosed. More particularly, the ESD protection device is configured so that a gate electrode (140) and a capacitor electrode (170) electrically connected to a drain region (162) are spaced apart from each other by a preset distance, and partially or entirely overlap each other, thereby increasing a capacitance (Cgd) between the gate electrode and the drain region.

Abstract: An electrostatic discharge (ESD) protection circuit includes an ESD detector connected between a pad and a first power source and configured to generate a detection signal when ESD is detected at the pad, a switch transistor including a gate controlled by the detection signal and a source and a drain connected between the pad and the memory, and a leakage current prevention circuit including a first transistor including a first gate connected to a second power source and a source and a drain connected between the pad and a first node, and a second transistor including a second gate connected to the pad and a source and a drain connected between the first node and the second power source. The first node is connected to or in electrical communication with a bulk node of the switch transistor.

Abstract: Disclosed are a slew boost amplifier and a display driver having the same, which include a first current generation circuit configured to apply a first current to an upper current mirror circuit, a second current generation circuit configured to apply a second current to a lower current mirror circuit, and a comparison circuit configured to detect a difference between an input voltage and an output voltage and to apply the first current when the difference is greater than or equal to a first predetermined threshold and the second current generation circuit to apply the second current when the difference is less than a second predetermined threshold.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: A MEMS microphone includes a substrate having a cavity, a diaphragm disposed over the substrate to cover the cavity, an anchor extending from and end portion of the diaphragm to surround a periphery of the diaphragm, the anchor being fixed to a lower surface of the substrate to support the diaphragm from the substrate, a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm to define an air gap therebetween and having a plurality of acoustic holes, an upper insulation layer covering an upper surface of the back plate to hold the back plate, and a strut positioned on the anchor, the strut being connected to the upper insulation layer and making contact with a lower surface of the anchor to support the upper insulation layer and to be spaced from the diaphragm.

Abstract: Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: An image sensor includes a substrate having a first conductivity type, a first charge accumulation region disposed in the substrate and having a second conductivity type, a second charge accumulation region connected with the first charge accumulation region, having the second conductivity type and extending downward from an edge of the first charge accumulation region, a pinning region disposed on the first charge accumulation region and having the first conductivity type, a floating diffusion region spaced laterally from the pinning region, a channel region disposed between the pinning region and the floating diffusion region, and a gate structure disposed on the channel region.

Abstract: Provided is an organic light-emitting diode display device (100) in which an anode electrode (134) extends to cover sides of a reflective metal (131) below the anode electrode (134).

Abstract: An input stage configured to differentially amplify an input signal and an output signal, a first current mirror and a second current mirror configured to receive a differential current from the input stage, an output stage including first and second output transistors, respectively including a gate connected to the first and second current mirrors, and a slew rate compensation circuit configured to (i) mirror a comparison current generated by comparing a voltage of a first input signal with a voltage of a second input signal, and (ii) provide the mirrored comparison current to the gate of the first or second output transistor.

Abstract: An ESD protection circuit for an input/output buffer in which when an ESD pulse or event occurs, an ESD surge on a pad is discharged to a diode and a transistor channel, thereby enhancing the efficiency of the ESD protection circuit. The ESD protection circuit includes a floating N-well bias circuit connected to a pad at an output of driver circuit and outputting a bias voltage based on or in response to a supply voltage; a switch circuit connected to a logic circuit and the driver circuit, and configured to connect and disconnect the logic circuit and the driver circuit based on or in response to the supply voltage; and a pull-down circuit connected to the driver circuit, configured to output a voltage to the driver circuit based on or in response to the supply voltage.

Abstract: The present disclosure relates to an insulated gate bipolar transistor (IGBT) and, more particularly, to an insulated gate bipolar transistor, in which a barrier region is in a mesa between adjacent trench gates to divide the width of the mesa, thereby inducing the accumulation of hole carriers, and thus reducing an on-resistance (e.g., of the IGBT).

Abstract: A back plate is disposed in a vibration area of a MEMS microphone. The back plate includes a central area located at a central portion of the back plate and having a plurality of acoustic holes formed therein, and a peripheral area located to surround the central area. The acoustic holes are arranged to be spaced apart from each other by the same interval.