Abstract: A signal control unit for an organic light emitting diode (OLED) display device includes a substrate structure including a plurality of active elements for the pixels, first metal electrodes disposed on the substrate structure, and configured to be electrically connected to a portion of each of the active elements, second metal electrodes disposed over and adjacent the first metal electrodes, configured to electrically connected to corresponding ones of the first metal electrodes, respectively, by via contacts extending vertically to electrically connect the first metal electrodes to the second metal electrodes, and interlayer insulating layer structure interposed between the first electrodes and the second electrodes and having the via contacts therein, the interlayer insulating layer structure having a stacked structure in which a first interlayer insulating layer, a light blocking layer and a second interlayer insulating layer are stacked in order.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate being disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, the diaphragm being spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement with responding to an acoustic pressure and a plurality of anchors extending from an end portion of the diaphragm to be integrally formed with the diaphragm, the anchors being arranged along a circumference of the diaphragm to be spaced apart from each other, and having lower surfaces making contact with an upper surface of the substrate to support the diaphragm. Thus, the MEMS microphone may have improved rigidity and flexibility.

Abstract: An input/output circuit includes a logic unit configured to generate a first signal and a second signal based on data and a first control signal, a driver including a first PMOS transistor having a first gate, a first source that receives a first voltage from a first voltage source, and a first drain, and a first NMOS transistor having a second gate that receives the second signal, a second source that receives a second voltage from a second voltage source less than the first voltage, and a second drain connected to the first drain, a gate-tracking circuit configured to receive the first signal and transfer the received first signal to the first gate of the first PMOS transistor based on a second control signal, and an input/output terminal connected to the first drain and the second drain.

Abstract: A MEMS microphone includes a substrate having a cavity defining a vibration area and a peripheral area surrounding the vibration area, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate to cover the cavity, the diaphragm defining an air gap together with the back plate, and the diaphragm sensing an acoustic pressure to generate a displacement, a plurality of anchors arranged along a circumference of the diaphragm, and spaced apart from each other to define a plurality of slits configured to serve as first vent channels for communicating the air gap with the cavity, and at least one vent hole penetrating through the diaphragm, and serving as a second vent channel for communicating the air gap with the cavity.

Abstract: A backside illuminated image sensor includes pixel regions disposed in a substrate, a light-blocking pattern disposed on a backside surface of the substrate and having openings corresponding to the pixel regions, a color filter layer disposed on the light-blocking pattern, a micro lens array disposed on the color filter layer, and refraction patterns respectively disposed in the openings to condense light passing through the micro lens array and the color filter layer into the pixel regions.

Abstract: A backside illuminated image sensor includes pixel regions disposed in a substrate, an insulating layer disposed on a frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, and an anti-reflective layer disposed on a backside surface of the substrate. The substrate has a first opening for partially exposing a backside surface of the bonding pad, the insulating layer has a second opening for partially exposing the backside surface of the bonding pad, and the anti-reflective layer has a first portion extending along an inner side surface of the first opening.

Abstract: A signal control unit for an organic light emitting diode (OLED) display device, includes a substrate structure including a plurality of active elements each corresponding to a pixel, a lower metal pattern disposed on the substrate structure, and electrically connected to a portion of the plurality of active elements, an insulating interlayer disposed on the substrate structure and at least partially covering the lower metal pattern, a via contact penetrating through the insulating interlayer and connected to the lower metal pattern, a metal electrode disposed on the insulating interlayer, and connected to the via contact, and an electrode passivation layer pattern substantially covering the metal electrode to expose a center portion of an upper surface of the metal electrode while covering a remainder of the upper surface and a side surface of the metal electrode. Therefore, leakage current which flows through the side surface of the metal electrode is suppressed.

Abstract: A source driver includes a digital-to-analog converter configured to receive a data signal, convert the received data signal into an analog signal, and output the analog signal, an output unit including amplifiers configured to amplify the analog signal, a control signal provision unit configured to output at least one control signal based on or in response to a first bias signal, at least one level shifter configured to shift a level of the control signal(s) based on or in response to a second bias signal having a higher voltage than the first bias signal and output at least one level-shifted control signal, and a protector configured to detect a voltage of the first bias signal and turn off the amplifiers and the level shifter when the detected voltage of the first bias signal is less than a predetermined reference voltage.

Abstract: A backside illuminated image sensor includes pixel regions disposed in a substrate, an insulating layer disposed on a frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, and an anti-reflective layer disposed on a backside surface of the substrate. The substrate has a first opening for partially exposing a backside surface of the insulating layer, and the insulating layer has a third opening for partially exposing a backside surface of the bonding pad. The anti-reflective layer comprises a first portion disposed on an inner side surface of the first opening and a second portion disposed on a portion of the backside surface of the insulating layer exposed by the first opening and having a second opening connecting the first opening with the third opening, and a first spacer is disposed on inner side surfaces of the second opening and the third opening.

Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first body region disposed in a substrate and having a first conductivity type, a second body region disposed on the first body region and having the first conductivity type and a portion protruding in a channel length direction, a source region disposed in the second body region and having a second conductivity type, a drain region spaced apart from the protruding portion of the second body region in the channel length direction and having the second conductivity type, a well region configured to electrically connect the protruding portion of the second body region and the drain region and having the second conductivity type, and a gate structure disposed on the protruding portion of the second body region.

Abstract: A half-power buffer amplifier is disclosed. The amplifier includes an amplification unit configured to differentially amplify differential input signals, the amplification unit including nodes configured to output differentially amplified first to fourth output signals, a first output buffer unit including first and second transistors, and an output node to which the first and second transistors are connected, a second output buffer unit including third and fourth transistors, wherein the third and fourth transistors are connected to the output node, a first control switch between the first output node and the second transistor and controlled by a polarity control signal, and a second control switch between the second output node and the third transistor and controlled by a complement of the polarity control signal.

Abstract: An output buffer circuit is disclosed to achieve a high slew rate without increasing current consumption. The output buffer circuit includes an input circuit configured to output a first signal and a second signal in response to an input signal, and a slew rate control circuit configured to connect one of the first signal and the second signal to an output terminal to control a slew rate of an output signal based on or in response to a potential difference between the input signal and the output signal.

Abstract: An ESD protection SCR device includes an epitaxial layer provided on a P-type semiconductor substrate, the epitaxial layer having the P-type conductivity, element isolation layers provided on the epitaxial layer, the element isolation layers dividing the epitaxial layer into an anode region and a cathode region, a first well of an N-type conductivity, provided in a portion of the epitaxial layer corresponding to the anode region, a first impurity region provided on a surface of the first well, the first impurity region being connected to an anode terminal and having a high concentration P-type conductivity, a second well of the P-type conductivity, provided in a portion of the epitaxial layer corresponding to the cathode region, a second impurity region provided on a surface of the second well, the second impurity region being connected to a cathode terminal and having a high concentration N-type conductivity, and a floating well of the N-type conductivity, buried in the epitaxial layer.

Abstract: A non-volatile memory array includes gate structures disposed on a substrate, each of the gate structures including a tunneling oxide layer positioned on the substrate, a floating gate positioned on the tunneling oxide layer and being arranged along a first direction on the tunneling oxide layer, sidewall gates disposed on sidewalls of the floating gate, extending in the first direction and being spaced apart from each other, and a gate dielectric layer interposed between the floating gate and the sidewall gates, bit lines disposed over the substrate, each extending in a second direction to intersect the sidewall gates, a drain region positioned in an upper portion of the substrate, the drain region overlapping, and being electrically connected to, the one of the bit lines, and a source line positioned between adjacent sidewall gates, the source line extending in the first direction and being buried in the substrate.

Abstract: A MEMS microphone includes a cavity extending portion that increases the size of the cavity. The cavity extending portion can be sloped or stepped in order to create a desired profile of the extended cavity shape. Thus, the volume of the cavity may be increased in order to decrease the compliance and to increase a Signal to Noise Ratio.

Abstract: A lateral double diffused MOS transistor includes a drain region positioned in a central region of an upper surface portion of an epitaxial layer, the drain region including a first well of a second conductive type, a source region positioned in the upper surface portion of the epitaxial layer and spaced apart from the drain region, the source region having a ring shape to surround the drain region and including a second well of the first conductive type, a first gate electrode disposed on the epitaxial layer and between the drain region and the source region, a P-sub region disposed on an upper surface of the epitaxial layer and laterally spaced apart from the source region, and a deep well of the second conductive type, disposed in the epitaxial layer, the deep well radially extending from the first well through the second well to entirely surround the drain region and the source region.

Abstract: A MEMS microphone includes a substrate defining a cavity, a diaphragm being spaced apart from the substrate, covering the cavity, and configured to generate a displacement of the diaphragm in response to an applied acoustic pressure, an anchor extending from an end portion of the diaphragm, and fixed to an upper surface of the substrate to support the diaphragm and a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm such that an air gap is maintained between the back plate and the diaphragm, and defining a plurality of acoustic holes, wherein the anchor has a repetitive concave-convex shape in a direction toward a center of the diaphragm so that the anchor acts as a resistance to an acoustic wave.

Abstract: An element isolation structure includes a substrate defining a trench including an upper trench and a lower trench in communication with each other, the substrate including an inclined sidewall that forms the upper and lower trench; a first thin film liner on the substrate and conforming to the substrate, the first thin film liner having a substantially uniform thickness trench; a second thin film liner pattern selectively on a lower portion of the first thin film liner within a volume defined by the lower trench, the second thin film liner pattern having a substantially uniform thickness; a lower isolation layer formed on the second thin film liner pattern and substantially filling the volume defined by the lower trench; and an upper isolation layer formed on an upper portion of the first thin film liner and the lower isolation layer and substantially filling a volume defined by the upper trench.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, a diaphragm disposed between the substrate and the back plate, a first supporting member surrounding the diaphragm, the first supporting member including first dam portions arranged along a circumference of the diaphragm, and first slit portions between the first dam portion adjacent to each other to be configured to support the diaphragm from a lower face of the substrate, and a second supporting member surrounding the first supporting member, the second supporting member including second dam portions arranged along a circumference of the first dam portions, and second slit portions between the second dam portion adjacent to each other to be configured to further support the diaphragm from the lower face of the substrate. Thus, the MEMS microphone has an increased acoustic resistance.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate to cover the cavity and having a plurality of acoustic holes, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being disposed under the back plate, including a venting hole communicating with the cavity, and sensing an acoustic pressure to create a displacement, and a first insulation layer interposed between the substrate and the diaphragm to support an end portion of the diaphragm to separate the diaphragm from the substrate, and the first insulation layer having an opening formed at a position corresponding to the cavity to expose the diaphragm. Thus, since the process of forming an anchor may be omitted, the process may be simplified, and process time may be shortened.