Abstract: An anode cell array unit for an organic light emitting diode display. The anode cell array unit is disposed on a substrate structure unit including an active element for each pixel, and has an organic light emitting unit is disposed thereon.

Abstract: A display driver integrated circuit (DDI) includes a level shifter unit configured to convert a level of a control signal to a voltage in a range that equal to or greater than a first voltage and is equal to or less than a second voltage and output a switch control signal, and a voltage generator including a capacitor and a switch that is turned on or off based on or in response to the switch control signal and configured to generate at least one third voltage.

Abstract: Disclosed is a high voltage semiconductor device and a method of manufacturing the same.

Abstract: Disclosed is a gamma correction circuit and method capable of minimizing power consumption by adding third and fourth input amplifiers receiving reference voltages which are identical to voltages to first and second input amplifiers, respectively, and deactivating the first and second input amplifiers during an always on display (AOD) mode. The gamma correction circuit includes a first input amplifier configured to output a maximum voltage when active, a second input amplifier configured to output a minimum voltage when active, a third input amplifier configured to output a highest gamma voltage in response to the first reference voltage, and a fourth input amplifier configured to output a lowest gamma voltage in response to the second reference voltage. The first and second input amplifiers are deactivated when the display driving device operates in the AOD mode.

Abstract: A method of manufacturing a gate structure for a nonvolatile memory device is disclosed. A tunneling oxide layer is formed on a substrate, and then a first polysilicon layer, a gate dielectric layer, a second polysilicon layer and a hard mask pattern are sequentially formed on the tunneling oxide layer. Then, the second polysilicon layer, the gate dielectric layer, and the first polysilicon layer are patterned through an etching process using the hard mask pattern to form stacked memory gates on the tunnel oxide layer, each including a floating gate, a gate dielectric layer pattern and a control gate on the tunneling oxide layer, and a select gate provided between the memory gates on the tunneling oxide layer.

Abstract: An anode structure of an organic light emitting diode display device, includes an insulating interlayer disposed on a silicon substrate, a first metal layer pattern disposed on the insulating interlayer comprising a first metal to be configured to upwardly reflect light, a second metal layer pattern formed on the first metal layer pattern comprising a second metal having a work function of 4.0 eV or more, and a diffusion barrier layer pattern interposed between the first metal layer pattern and the second metal layer pattern for preventing elements of the first metal or the second metal from diffusing between the first metal layer and the second metal layer.

Abstract: A high voltage power diode includes a P-type semiconductor substrate, a P-type epitaxial layer provided on the semiconductor substrate, an N-type isolation layer provided at a lower portion of the epitaxial layer, the isolation layer extending in a horizontal direction, oxide isolation layer provided at an upper surface of the epitaxial layer, the oxide isolation layer defining the epitaxial layer into an anode region and a cathode region, an first well of N-type conductivity, and a second well of P-type conductivity are provided on the upper surface of the epitaxial layer, a guard ring structure provided on the upper surface of the epitaxial layer and spaced apart from the second well in a horizontal direction, the guard ring structure including a third well having a first sub-well of N-type conductivity, a second sub-well of P-type conductivity and an third sub-well of N-type conductivity which are arranged in a horizontal direction, and a guard ring terminal electrically connected to the anode terminal.

Abstract: A MEMS microphone includes a substrate having a cylindrical cavity, a back plate disposed over the substrate and having a plurality of acoustic holes defined therethrough, a diaphragm disposed between the substrate and the back plate, the diaphragm spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement with responding to an acoustic pressure and an anchor extending from an end portion of the diaphragm and extending along a circumference of the diaphragm, and the anchor including a lower surface in contact with an upper surface of the substrate to support the diaphragm, and a connecting portion, which is connected to the diaphragm, presenting a stepped cross section. Thus, the MEMS microphone may have improved flexibility and improved total harmonic distortion.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate being disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, the diaphragm being spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement in response to an acoustic pressure and a plurality of anchors extending from an end portion of the diaphragm to be integrally formed with the diaphragm, the anchors being arranged along a circumference of the diaphragm to be spaced apart from each other, and having lower surfaces making contact with an upper surface of the substrate to support the diaphragm. Thus, the MEMS microphone may have improved rigidity and flexibility.

Abstract: A source driver and a display device including the same includes a latch unit to store data, a digital-to-analog conversion (DAC) unit to convert the stored data into an analog signal, amplifiers to amplify or buffer the analog signal, output pads, output switches between the DAC unit and the output pads corresponding to the amplifiers, and an output controller to generate switch control signals that control the output switches based on/in response to a source output enable signal. The amplifiers and the output switches include a plurality of groups. The switch control signals to the output switches of each group may have different delay times based on the source output enable signal. Delay times between contiguous switch control signals to at least one group may be different from delay times between contiguous switch control signals to one or more other groups.

Abstract: A half-power buffer amplifier includes an amplification unit including first and second nodes, the amplification unit configured to differentially amplify a differential input signal and to output a differentially amplified output signal, a first output unit including a first buffer unit between a first power source having a first voltage and a second power source having a second voltage, a second buffer unit between the first and second power sources, and a first switch unit between the first and second buffer units, and a second output unit including a third buffer unit between the second power source and a third power source having a third voltage, a fourth buffer unit between the second and third power sources, and a second switch unit between the third and fourth buffer units. Each of the first to third buffer units receives the differentially amplified output signal. The first switch unit is turned on or off based on or in response to a pre-driving control signal.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, the back plate having a plurality of acoustic holes, a diaphragm interposed between the substrate and the back plate, and being spaced apart from the substrate and the back plate, the diaphragm covering the cavity, forming an air gap between the back plate, and sensing an acoustic pressure to generate a displacement, and a plurality of anchors extending from an end portion of the diaphragm and along a circumference of the diaphragm, each of the anchors having a serpentine shape in a plan view and including a bottom portion making contact with an upper surface of the substrate to support the diaphragm from the substrate. Thus, the MEMS microphone may have adjustable area of the slit.

Abstract: A source driver includes an amplification unit including a plurality of groups of amplifiers, each of the plurality of groups of amplifiers including a first amplifier and a second amplifier, multiplexers configured to select and provide an output of one of the first and second amplifiers in each of the plurality of groups to one of a plurality of data lines, charge share switch units corresponding to the multiplexers and between the plurality of data lines and a common line, and a control switch between the common line and a power supply configured to provide a reference voltage. Based on or in response to a power off reset (PFR) signal, the control switch provides the reference voltage to the common line, and the charge share switches connect the common line to the data lines, based on or in response to a power off rest (PFR) signal.

Abstract: A buffer amplifier configured to perform voltage switching (DC bias voltage switching). The buffer amplifier includes first and second amplification blocks corresponding to first and second channels, respectively, first and second output buffer units controlled by output levels of the first and second amplification blocks, and a switch unit configured to connect or disconnect the first or second amplification block to or from the first or second output buffer unit. The switch unit includes a first switch unit configured to connect or disconnect one of the first and second amplification blocks to or from the first output buffer unit based on or in response to a control signal and a second switch unit configured to connect or disconnect another one of the first and second amplification blocks to or from the second output buffer unit based on or in response to the control signal.

Abstract: A source driver includes a latch configured to store data based on or in response to a latch signal and output the data stored in the latch, a resistor string including a plurality of resistors configured to provide a plurality of grayscale voltages, a decoder connected to the resistor string, configured to select and output one of the plurality of grayscale voltages based on or in response to the data from the latch, an amplifier including a first input terminal, a second input terminal and an output terminal, a first control switch between the decoder and the first input terminal of the amplifier, and a second control switch between the first input terminal and the second input terminal of the amplifier. The first control switch and the second control switch are alternately turned on and off.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate provided over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and spaced apart from the substrate and the back plate, a strut located at outer side of the diaphragm, having a lower surface in contact with an upper surface of the substrate and being integrally formed with the upper insulation layer to support the upper insulation layer to space the upper insulation layer from the diaphragm, and a bending prevention member provided on an upper surface of the back plate for preventing the back plate from being bent.

Abstract: A sensing circuit and a touch sensor including the same are disclosed. The sensing circuit includes a current provider configured to provide a first current between a first power source and a first node and a second current between the first node and a second power source, a bias unit configured to output first and second outputs to first and second output nodes, and a current-to-voltage converter configured to mirror the first and second currents and to output a sensing voltage. The bias unit includes a differential amplifier, first and second output transistors, and a current mirror. A first input terminal of the differential amplifier receives a reference voltage and a second input terminal of the differential amplifier is connected to a second node corresponding to a connection node of the first and second output transistors.

Abstract: A half-power buffer and/or amplifier is disclosed. The half-power buffer and/or amplifier includes an amplifying unit including first and second transistors connected between a first voltage source having a first voltage and a third voltage source having a third voltage, and a first output node configured to connect the first and second transistors and to output a voltage over a first voltage range between the first and third voltages, a second output buffer unit including third and fourth transistors connected between a second voltage source having a second voltage and the third voltage source, and a second output node configured to connect the third and fourth transistors and to output a voltage over a second voltage range between the second and third voltages, and a first charge share switch unit connected between the gate of the second transistor and the first voltage source, and configured to perform a charge share and/or equalization operation.

Abstract: A backside illuminated image sensor includes pixel regions disposed in a substrate, an anti-reflective layer disposed on a backside surface of the substrate, a light-blocking pattern disposed on the anti-reflective layer and having openings corresponding to the pixel regions, a color filter layer disposed on the light-blocking pattern, and a micro lens array disposed on the color filter layer, wherein the light-blocking pattern has a width decreasing toward the backside surface of the substrate.

Abstract: The present invention relates to an area-efficient apparatus and method for sensing a signal using overlap sampling time. In a preferred embodiment of the present invention, the sensing apparatus sensing a signal which detects degradation of a light-emitting device and transferring the signal to a compensating circuit comprises: M switching portions connected to sensing lines included in each group of M groups into which N sensing lines are divided, where N>M and N and M are natural numbers. The switching portion is characterized by alternatively connecting any one of N/M sensing lines to a sample-and-hold portion.