Abstract: A super junction MOSFET includes a substrate having a first conductive type, an epitaxial layer formed on the substrate, a set of pillars extending from the substrate through the epitaxial layer, the set of pillars being spaced apart from each other, a set of first wells, the set of first wells formed in the epitaxial layer to extend to an upper face of the epitaxial layer, and each of the set of first wells connected to at least one corresponding pillar of the set of pillars, a set of second wells of the first conductive type formed in the set of first wells, and a plurality of gate structures formed on the epitaxial layer, each extending in a first direction to have a stripe shape such that the gate structures are spaced apart from each other. Thus, the gate structure has a relatively small area to reduce an input capacitance of the super junction MOSFET.

Abstract: Disclosed is an image sensor having an isolation structure. The isolation structure includes a deep well region of a first conductive type disposed in a substrate of a second conductive type and an isolation region disposed between charge accumulation regions for accumulating photo-charges in order to electrically isolate the charge accumulation regions from each other. The charge accumulation regions are disposed on the deep well region and have the second conductive type. The isolation region is connected with the deep well region and has the first conductive type.

Abstract: A backside illuminated image sensor includes a photodiode arranged in a substrate, a first insulating layer arranged on a front surface of the substrate, a bonding pad arranged on the first insulating layer, and a second insulating layer arranged on the first insulating layer and the bonding pad. The bonding pad is partially exposed by an opening passing through the substrate and the first insulating layer, and an edge portion of the bonding pad is supported by the first and second insulating layers.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns, a selection unit configured to select outputs of some of the columns of the pixel array and output selection output signals, and an analog-digital conversion block including a plurality of analog-digital conversion units corresponding to the columns of the pixel array. First ones of the plurality of analog-digital conversion units include analog-digital conversion blocks configured to convert the selection output signals and output digital data. When the first analog-digital conversion units convert the selection output signals, second ones of the plurality of analog-digital conversion units are turned off.

Abstract: An image sensor is disclosed. The image sensor includes a pixel array including a plurality of pixel units, a controller configured to drive the pixel array, and an analog-digital conversion block configured to convert a sensing signal output from the pixel array to a digital signal, wherein each of the pixel units includes a photodiode and a plurality of transistors on a semiconductor substrate, each of the transistors includes a gate electrode and a gate dielectric layer, each gate dielectric having a thickness, and the thickness of at least one of the gate dielectric layers is different from the thickness of at least one of the other gate dielectric layers.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and an anchor extending from a circumference of the diaphragm to be connected with an end portion of the diaphragm. The diaphragm is spaced apart from the substrate and the back plate to covers the cavity, and the diaphragm senses an acoustic pressure to generate a displacement. The anchor extends from a circumference of the diaphragm to be connected with an end portion of the diaphragm, and is connected with the substrate to support the diaphragm. Thus, the MEMS microphone can prevent a portion of an insulation layer located around the anchor from remaining and can prevent a buckling phenomenon of the diaphragm from occurring.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, a diaphragm being disposed between the substrate and the back plate and being spaced apart from the substrate and the back plate and at least one anti-buckling portion provided between the substrate and the diaphragm. The diaphragm covers the cavity and the diaphragm senses an acoustic pressure to create a displacement. The anti-buckling portion is configured to temporarily support the diaphragm in case of a warpage of the diaphragm to prevent a buckling of the diaphragm. Thus, the MEMS microphone can prevent the diaphragm from generating a warpage by more than a predetermined degree, so that the diaphragm can have a tensile stress and the buckling phenomenon of the diaphragm can be prevented.

Abstract: A photo-detector includes a detection region for collecting minority carriers in a substrate, first and second field generating regions generating a majority carrier current to move the minority carriers towards the detection region, and a blocking region spaced apart from the detection region to block a leakage current. The photo-detector includes a ground region spaced apart from the detection region, and the blocking region is disposed between the detection region and the ground region.

Abstract: An apparatus can include a test power supplier comprising a power supply to sense resistance between electrodes of a touch sensor, and a comparison unit configured to compare the sensed resistance between the electrodes with an allowable threshold to output a comparison result.

Abstract: A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one side of the gate electrode structure, a first drift region disposed in the substrate to be adjacent to another side of the gate electrode structure, a drain region electrically connected with the first drift region, and a device isolation region disposed on one side of the drain region. Particularly, the first drift region is spaced apart from the device isolation region.

Abstract: In embodiments, a high voltage semiconductor device includes a gate structure disposed on a substrate, a source region disposed at a surface portion of the substrate adjacent to one side of the gate structure, a drift region disposed at a surface portion of the substrate adjacent to another side of the gate structure, a drain region disposed at a surface portion of the drift region spaced from the gate structure, and an electrode structure disposed on the drift region to generate a vertical electric field between the gate structure and the drain region.

Abstract: An image sensor includes a first charge storage region of a first conductive type disposed in a substrate, a second charge storage region of a second conductive type disposed on one side of the first charge storage region, a first floating diffusion region spaced apart from the first charge storage region, a second floating diffusion region spaced apart from the second charge storage region, a first transfer gate disposed on the substrate between the first charge storage region and the first floating diffusion region, and a second transfer gate disposed on the substrate between the second charge storage region and the second floating diffusion region.

Abstract: A touch sensor is disclosed. The touch sensor includes a touch panel including sensing nodes arranged in a matrix form and sensing lines connected to the sensing nodes, a touch sensing unit for providing driving signals for driving the sensing nodes, and a selector including a plurality of multiplexers for selectively providing the driving signals provided from the touch sensing unit to the sensing lines of the touch panels, wherein each of the multiplexers is selectively connected to two or more corresponding sensing nodes among the sensing nodes, and the two or more sensing nodes of the touch panel, selectively connected to each of the multiplexers, are positioned at different columns and rows.