Abstract: An isolated flyback converter for an LED driver may include: (1) A snubber circuit configured to be connected to the primary side of a transformer. (2) A switching unit configured to have a source terminal and a drain terminal and configured to be turned on or off. (3) A control unit configured to detect a first input signal proportional to a fluctuation in the power supply voltage, detect a second input signal when the switching unit is turned off, generate a signal inversely proportional to the maximum value of the first input signal and multiply the generated signal to the second input signal, and control a peak current of the switching unit to be proportional to the multiplication result of the signal inversely proportional to the maximum value of the first input signal and the second input signal such that a secondary-side current of the transformer is maintained constant.

Abstract: A receiver for clock reconstitution in a semiconductor field includes a termination resistor arranged between two input stages, to which a pair of input signals are input, the termination resistor including a first resistor and a second resistor; a strobe signal generator for generating a strobe signal, using a first signal corresponding to a differential voltage output from a node between the first resistor and the second resistor; and a clock reconstitutor for generating a clock signal in response to the strobe signal generated from the strobe signal generator.

Abstract: A solid-state imaging device having a protective wiring inserted between adjacent pixel pairs so that the generation of electrical charges caused by a voltage variation in adjacent pixel pairs may be restrained, and a method for manufacturing the same. A solid-state imaging device with an additional protective wiring may be provided between pixel pairs to restrain the generation of electric charges within one of the pixel pairs caused by a voltage variation in the other pixel pair. A method for manufacturing a solid-state imaging device with an additional protective wiring which is provided between pixel pairs to restrain the generation of electric charges within one of the pixel pairs caused by a voltage variation in the other pixel pair.

Abstract: Embodiments provide an illumination apparatus including: an adapter that converts alternating power into driving power; and a light emitting device that is detachably and electrically connected to the adapter and that emits light according to the driving power provided from the adapter.

Abstract: An illumination apparatus includes an adapter that is detachably and electrically connected a fluorescent lamp socket; a power supply unit in the adapter to supply power; a light emitting device driver that generates driving power from the power supplied by the power supply unit; a controller that controls the light emitting device driver; and a light emitting device illumination unit that emits light according to the driving power from the light emitting device driver and that is electrically connects the power supply unit to another fluorescent lamp socket.

Abstract: A micro-lens array and a method for fabricating a micro-lens includes forming a first lens formation material layer on and/or over a micro-lens formation area of a semiconductor substrate, and then forming a portion of the lens formation material layer as a first micro-lens using a first mask. A second lens formation material layer is formed adjacent to the first micro-lens on and/or over the micro-lens formation area. The second lens formation material layer is also formed as a second micro-lens using a second mask which is a different type from that of the first mask.

Abstract: An image sensor for a semiconductor light-sensitive device including a semiconductor substrate and a light receiving device configured to receive light and generate a signal from the light. The image sensor may include an electron collecting device formed in the semiconductor substrate to receive at least a portion of the electrons generated by the light in the light receiving device. The image sensor may include a first type device isolation film configured to isolate the light receiving device from the electron collecting device. The image sensor may include a shielding film formed over the semiconductor substrate and configured to shield the first electron collecting device from the light.

Abstract: An image sensor may include a semiconductor substrate, a plurality of light receiving devices formed within the semiconductor substrate, and a plurality of device isolation films for isolating the light receiving devices from each other. When an arrangement direction of a pixel array may be formed by arranging the light receiving devices is a horizontal direction, the pixel array may be formed by alternately arranging a first type light receiving device and a second type light receiving device having different horizontal lengths.

Abstract: An isolated flyback converter for an LED driver includes a snubber circuit unit connected to the primary side of a transformer; and a snubber voltage detection unit which detects a snubber voltage of the snubber circuit unit and generates a reference voltage proportional to the detected snubber voltage. Further, the isolated flyback converter includes a switching unit with a source terminal and a drain terminal, and may be turned on or off in response to an arbitrary logic signal. Furthermore, the isolated flyback converter includes a control unit which compares a voltage supplied through the switching current sensing resistor with the reference voltage, and supplies a logic signal at relatively high level or relatively low level to the switching unit to control the switching unit such that a secondary-side current of the transformer is maintained relatively constant.

Abstract: An image sensor includes a charge pump circuit supplying first to third signals having sequentially decreasing voltage levels, a reset transistor having a drain and a gate connected with the charge pump circuit to form a diode connection and receiving the first to third signals, a photodiode generating photocharges, a transfer transistor forming a series connection between the photodiode and the reset transistor, a floating diffusion region forming a parallel connection between the transfer transistor and the reset transistor and storing the photocharges, and a drive transistor connected with the floating diffusion region, the reset transistor, a power supply voltage terminal, and a unit pixel output terminal. A gate of the transfer transistor receives a turn-off voltage if the first or second signal is supplied, and receives a turn-off voltage or a turn-on voltage if the third signal is supplied.

Abstract: An apparatus and method for demosaicing colors in an image sensor can accurately locate edge directionality by detecting a successive 1-line edge precisely. The embodiments may include an image sensor containing information on a color signal detected from each pixel, a first line memory receiving and storing output data from the image sensor, a missing green information extractor extracting missing green pixel information from the data of the first line memory, a delayer receiving the data of the first line memory, the delayer delaying the received data for a prescribed duration, the delayer outputting the delayed data, a second line memory temporarily storing the data outputted from the missing green information extractor and the data provided via the delayer, and a missing red/blue information outputter extracting missing red/blue information from the data of the second line memory.

Abstract: A slave and a communicating method between a slave and a master that includes checking whether the command to be sent is one of a write command and a read-out command if the master attempts to send a command to the slave, determining whether a processing of a previous command sent by the master is entirely completed if the command to be sent is the write command, and sending an acknowledgement signal that allows a transfer of the command to the master if the processing of the previously sent command is determined as one of entirely completed and the command to be sent is determined as the read-out command. The master sends the command to the slave in response to the acknowledgement signal sent by the slave.

Abstract: An illumination apparatus includes an adapter configured to be detachably and electrically connected to a socket and configured to convert alternating power into driving power; a light emitting device illumination part including a light emitting device that is configured to be detachably and electrically connected to the adapter and to emit light according to the driving power from the adapter; and an illumination direction controller that controls an illumination direction of the light emitting device.

Abstract: A method for manufacturing an image sensor includes forming circuitry including a metal line over a semiconductor substrate, forming a photodiode over the metal line, and forming a contact plug in the photodiode such that the contact plug is connected to the metal line. The forming of the contact plug includes performing a first etch process to etch a portion of the photodiode, and performing a second etch process to expose a portion of the metal line by using a byproduct generated in etching, to form a via hole for the contact plug in the photodiode.

Abstract: A display device includes a skew compensating type data receiving unit for delaying clocks received in response to a program signal, comparing the clocks delayed thus to compensating clocks, setting an internal delay amount according to a result of the comparison, and delaying and forwarding a low voltage differential signals according to the delay amount set thus, a clock receiving unit for delaying the clock received thus by a fixed delay amount and forwarding the clock delayed thus as a compensating clock, a clock generating unit for generating a data restoring clock by using the clock delayed thus, and a data restoring logic for restoring the low voltage differential signal delayed at the data receiving unit in synchronization with the data restoring clock, thereby compensating for an internal skew taking place at the data channel which receives a low voltage differential signal.

Abstract: A data transmission apparatus may include a delay locked loop for generating multi-phase clock signals synchronized to an input clock signal. A clock selector may select the multi-phase clock signals in response to a selection signal. A modulation controller may generate the selection signal using the input clock signal and modulation information, so that the clock selector selects the multi-phase clock signals within every predetermined interval. A clock generator may generate first and second latch clock signals according to the selected multi-phase clock signals. A data transmitter may transmit input data using the first and second latch clock signals. Therefore, the data transmission apparatus mitigates at least as much EMI as a related data transmission apparatus using spread spectrum clock generation for EMI mitigation, eliminates the probability of data error, and saves an IC area. It obviates the need for a FIFO memory, thus contributing miniaturization of the IC.

Abstract: An image sensor and a method for manufacturing the same are provided. An image sensor comprises a readout circuitry, an interlayer dielectric, an interconnection, an image sensing device, and a contact. The readout circuitry is formed at a first substrate. The interlayer dielectric is formed on the first substrate. The interconnection is formed in the interlayer dielectric. The interconnection is electrically connected to the readout circuitry. The image sensing device is formed on the interconnection. The image sensing device comprises a first conductive type layer and a second conductive type layer. The contact connects the first conductive type layer of the image sensing device and the interconnection electrically. The contact is isolated from the second conductive type layer by a trench formed in the second conductive layer around the contact.

Abstract: A power supply apparatus and method for an active matrix organic light emitting diode (AMOLED) is disclosed. The power supply apparatus supplies power to the AMOLED while using a switching frequency varied in accordance with a clock signal, and includes a load checker for comparing a load current of the AMOLED with a first reference voltage, and outputs a result of the comparison as a load check signal, and a frequency oscillator for generating the clock signal which has a variable frequency in response to the load check signal. The power supply apparatus is switched in accordance with a clock signal having a frequency modulated based on a load condition of the AMOLED, for example, a load current. Accordingly, it is possible to reduce switching power loss caused by unnecessary power consumption under the condition that a small load current is generated, thereby achieving an enhancement in efficiency.

Abstract: An image sensor and a manufacturing method for an image sensor. An image may include a central pixel array that contains pixels disposed in a center of a pixel area, and a peripheral pixel array that contains pixels disposed in a periphery of the pixel area. A gate oxide layer at a center area of a photodiode may have a smaller thickness than a gate oxide layer of pixels at a center area of the photodiode.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a semiconductor substrate, an interconnection and an interlayer dielectric, a lower electrode layer, an image sensing device, a first via hole, a barrier pattern, a second via hole, and a metal contact. The semiconductor substrate comprises a readout circuitry. The interconnection and the interlayer dielectric are formed on the semiconductor substrate. The lower electrode layer is disposed over the interlayer dielectric. The image sensing device is disposed on the lower electrode layer. The first via hole is formed through the image sensing device. The barrier pattern is formed on a sidewall of the first via hole. The second via hole is formed through the lower electrode layer and the interlayer dielectric under the first via hole. The metal contact is formed in the first and second via holes.