Patents Assigned to Dongbu Hitek Co., Ltd.
  • LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME
    Publication number: 20140264587
    Abstract: A laterally-diffused metal oxide semiconductor (LDMOS) device and method of manufacturing the same are provided. The LDMOS device can include a drift region, a source region and a drain region spaced a predetermined interval apart from each other in the drift region, a field insulating layer formed in the drift region between the source region and the drain region, and a first P-TOP region formed under the field insulating layer. The LDMOS device can further include a gate polysilicon covering a portion of the field insulating layer, a gate electrode formed on the gate polysilicon, and a contact line penetrating the gate electrode, the gate polysilicon, and the field insulating layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Nam Chil MOON
  • SEMICONDUCTOR DEVICE INCLUDING LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR
    Publication number: 20140264585
    Abstract: A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Nam Chil MOON
  • DRIVING CIRCUIT OF IMAGE SENSOR AND METHOD OF OPERATING THE SAME
    Publication number: 20140252203
    Abstract: A driving circuit of an image sensor is provided. The driving circuit can include a pixel array where pixel circuits receiving light and converting the received light into an electrical signal are arranged in columns, an analog-to-digital (ADC) block including a plurality of ADC circuits receiving an analog image signal from pixel circuits arranged in the same column and converting the received analog image signal into a digital signal, and an ADC controller outputting a global signal to control each operation of the ADC circuit. The ADC controller can allow the ADC circuits in the ADC block to operate separately according to at least two timings.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 11, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventors: Hack Soo OH, Jeong Kwon NAM
  • IMAGE SENSOR
    Publication number: 20140252204
    Abstract: An image sensor is provided. An image sensor can include a plurality of unit pixels. Each of the unit pixels can include a photoelectric converter as a light receiving element. In each unit pixel, a transport switching unit can transport charges in the photoelectric converter to a floating diffusion region, and a first switching unit can selectively connect the floating diffusion region to a first sensing line.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 11, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Hee Sung SHIM
  • SIGNAL PROCESSING CIRCUIT OF TOUCH SCREEN
    Publication number: 20140247241
    Abstract: A signal processing circuit of a touch screen is provided. The signal processing circuit can include driving and sensing lines arranged to interact with one another in a touch screen panel, power sources supplying power to each of the driving lines, and sensing channels detecting touch by sensing a mutual capacitance on a node where the sensing line interacts with the driving line. The circuit can also include driving line switches selectively connecting the power sources to the driving lines, channel switches selectively connecting the sensing channels to the sensing lines, and a bypass line allowing the driving line to be connected to the sensing line by operation of the channel switches.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Woon Hyung HEO
  • METAL-OXIDE-METAL CAPACITOR
    Publication number: 20140246754
    Abstract: Provided is a capacitor of a semiconductor device. The capacitor can includes a plurality of parallel lower conductive lines in parallel and a plurality of upper conductive lines on the lower conductive lines. Each lower conductive line can have a line width that is different than that of the upper conductive line adjacent to it.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Su Tae KIM
  • TOUCH SCREEN PANEL
    Publication number: 20140247400
    Abstract: Touch screen panels and methods of manufacturing the same are provided. A touch screen panel can include a plurality of driving lines arranged in a first direction and a plurality of sensing lines arranged in a direction intersecting the first direction. The driving lines can each include at least one hole and/or at least one groove in an area intersecting the sensing line.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventors: Jin Ah LEE, Hyun SONG, Young Wook KIM, Won Cheol HONG, Joon SONG, Ae Young MA, Jon Ghwan KO, Han Kyung KIM
  • TOUCH SCREEN PANEL
    Publication number: 20140247242
    Abstract: A touch screen panel and a method of manufacturing the same are provided. A touch screen panel can include a substrate, driving lines on the substrate, sensing patterns on the substrate, and a dielectric on the substrate and the driving lines. Sensing lines can be disposed on the dielectric and arranged in a perpendicular direction to the driving lines. The sensing lines can be electrically connected to the sensing patterns.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventors: Jin Ah LEE, Hyun SONG, Young Wook KIM, Won Cheol HONG, Joon SONG, Ae Young MA, Jon Ghwan KO, Han Kyung KIM
  • SEMICONDUCTOR DEVICE HAVING A BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140246774
    Abstract: A semiconductor device and method for manufacturing the same are provided. A metal pad can be electrically connected to metal interconnections in a lower portion of the device. A passivation layer can be provided and can exposes a portion of the metal pad, and a buffer layer can be formed on lateral sides of the passivation layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Nam Gon CHOI
  • SEMICONDUCTOR DEVICE HAVING DEEP WELLS AND FABRICATION METHOD THEREOF
    Publication number: 20140246762
    Abstract: Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a plurality of areas with predetermined widths by patterning the insulating film. A plurality of ion implantation areas having a first conductivity type can be formed by implanting impurities into the plurality of open areas, and an oxide film pattern can be formed on each of the ion implantation areas. The insulating film patterns can be removed, and ion implantation areas having a second conductivity type can be formed by implanting impurities using the oxide film pattern as a mask. The semiconductor substrate can be annealed at a high temperature to form deep wells.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Kyung Wook KWON
  • IMAGE SENSOR HAVING THIN DARK SHIELD
    Publication number: 20140246714
    Abstract: An image sensor and method of manufacturing the same are provided. The image sensor can include a pixel array region having an active pixel area and a dark pixel area surrounding the active pixel area. A dark shield can be formed in the dark pixel area to inhibit light. Dark pixels can be provided under the dark shield. The dark shield can include a thin film including silicon chromium (SiCr).
    Type: Application
    Filed: March 14, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Chang Eun LEE
  • SIGNAL PROCESSING CIRCUIT OF A TOUCH SCREEN
    Publication number: 20140247243
    Abstract: A signal processing circuit of a touch screen panel is provided. A signal processing circuit can include a plurality of driving lines and sensing lines intersecting on the touch screen panel, a plurality of sensing channels connected to the sensing lines respectively and configured to detect whether a touch is performed by sensing mutual capacitance on intersecting nodes of the driving lines and the sensing lines, a distortion detection unit configured to detect whether distortion due to noise occurs on the basis of output voltages of the sensing channels, and a control unit configured to operate switches to alternate the circuit between a distortion mode and a normal mode, depending on whether noise is detected.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 4, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Woon Hyung HEO
  • Touch sensor panel
    Patent number: 8823666
    Abstract: A touch sensor panel includes at least one first electrode, and a second electrode above the at least one first electrode configured to cross the at least one first electrode, and having one or more openings therein.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: September 2, 2014
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Woncheol Hong
  • METHOD FOR DRIVING TOUCH PANEL
    Publication number: 20140240282
    Abstract: A method for driving a touch panel including driving lines, sensing lines, and node capacitors between neighboring and/or overlapping driving lines and sensing lines is disclosed. The method includes selecting two or more of the driving lines, and simultaneously driving the selected driving lines with driving signals. Each driving signal has three or more voltages of different levels.
    Type: Application
    Filed: February 25, 2014
    Publication date: August 28, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Tae Ho HWANG
  • BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140231962
    Abstract: A bipolar junction transistor (BJT) is provided. The BJT can include a semiconductor substrate, a first well disposed in the substrate and implanted with a first impurity, a second well disposed at one side of the first well and implanted with a second impurity, a first device isolation layer disposed in the first well and defining an emitter area, and a second device isolation layer disposed in the second well and defining a collector area, The BJT can also include an emitter having a second impurity, a base having a first impurity, a collector having a second impurity, and a high concentration doping area having a second impurity at high concentration. The high concentration doping area can be provided at one side of the collector in the second well.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 21, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventors: Jae Hyun YOO, Jong Min KIM
  • HIGH VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    Publication number: 20140231864
    Abstract: An electrostatic discharge protection device is provided. The electrostatic discharge protection device can include a semiconductor substrate having a first well and a second well, a silicon controller rectifier (SCR) device, and first and second impurity areas disposed on the first and second wells to form a PN junction. The SCR can have a PNPN structure or an NPNP structure, and the PN junction structure and the SCR device can be alternately disposed when the substrate is viewed from above.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 21, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventors: Jae Hyun YOO, Jong Min KIM
  • Bipolar transistor and method for manufacturing the same
    Patent number: 8802532
    Abstract: Disclosed are example bipolar transistors capable of reducing the area of a collector, reducing the distance between a base and a collector, and/or reducing the number of ion implantation processes. A bipolar transistor may includes a trench formed by etching a portion of a semiconductor substrate. A first collector may be formed on the inner wall of the trench. A second collector may be formed inside the semiconductor substrate in the inner wall of the trench. A first isolation film may be formed on the sidewall of the first collector. An intrinsic base may be connected to the third collector. An extrinsic base may be formed on the intrinsic base and inside the first isolation film. A second isolation film may be formed on the inner wall of the extrinsic base. An emitter may be formed by burying a conductive material inside the second isolation film.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: August 12, 2014
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Nam Joo Kim
  • Semiconductor device and method of fabricating the same
    Patent number: 8796088
    Abstract: A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the device region is provided, an align trench is formed in the outer region, a dummy trench is formed in the device region, an epi layer is formed over a top surface of the semiconductor substrate and within the dummy trench, a current path changing part is formed over the epi layer, and a gate electrode is formed over the current path changing part. When the epi layer is formed, a current path changing trench corresponding to the dummy trench is formed over the epi layer, and the current path changing part is formed within the current path changing trench.
    Type: Grant
    Filed: July 10, 2012
    Date of Patent: August 5, 2014
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Chul Jin Yoon
  • Semiconductor device and method of manufacturing the same
    Patent number: 8796104
    Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first insulation layer on or over a semiconductor substrate, metal patterns on or over the first insulation layer, a thin film resistor pattern disposed on or over the metal patterns, and an anti-reflection layer between the thin film resistor pattern and the metal patterns.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: August 5, 2014
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Chang Eun Lee
  • Semiconductor device and method for fabricating the same
    Patent number: 8796766
    Abstract: A semiconductor device includes a laterally double diffused metal oxide semiconductor (LDMOS) transistor formed on a partial region of a epitaxial layer of a first conductive type, a bipolar transistor formed on another partial region of the epitaxial layer of the first conductive type, and a guard ring formed between the partial region and the another partial region. The guard ring serves to restrain electrons generated by a forward bias operation of the LDMOS transistor from being introduced into the bipolar transistor.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: August 5, 2014
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Cheol Ho Cho