Abstract: An image sensor may include a pixel array including an active pixel area including active pixels and a dark pixel area including dark pixels, an analog-to-digital conversion unit configured to generate a dark pixel data code by converting an analog output of each of the dark pixels and an active pixel data code by converting an analog output of each of the active pixels, an offset extractor configured to extract a final offset using the dark pixel data code, and a corrector configured to correct the active pixel data code using the final offset. The corrector outputs one of a correction pixel data code and a reference code as a corrected result from the active pixel data code and the reference code. The correction pixel data code is obtained by correcting the active pixel data code using the final offset.

Abstract: An ESD protection SCR device includes a semiconductor substrate, an epitaxial layer, device isolation layers, an n-type well formed in an anode region, a first high concentration p-type impurity region formed on a surface portion of the n-type well, a first high concentration n-type impurity region formed on the surface portion of the n-type well, a p-type well formed in an cathode region, a second high concentration n-type impurity region formed on a surface portion of the p-type well, a second high concentration p-type impurity region formed on a surface portion of the p-type well so as to be spaced apart from the second high concentration n-type impurity region, and a third high-concentration p-type impurity region formed on the surface portion of the p-type well so as to surround a side portion of the second high-concentration n-type impurity region, adjacent to the anode region.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns. The matrix being divided into a plurality of groups and each of the plurality of groups includes two or more different columns, a binning sampling unit configured to sample outputs of unit pixels in each of the plurality of groups and output binning sampling signals, and an analog-digital conversion block including first and second analog-digital conversion units corresponding to the columns. The first analog-digital conversion units convert the binning sampling signals. When the first analog-digital conversion units convert the binning sampling signals, the second analog-digital conversion units are turned off.

Abstract: A touch sensor includes a touch panel including driving lines and sensing lines and having node capacitors between neighboring or overlapping driving lines and sensing lines, a driving unit configured to modulate driving signals using a direct sequence spread spectrum technique or scheme and simultaneously drive two or more of the driving lines using the modulated driving signals, and a sensing unit configured to demodulate the signals from the sensing lines using the direct sequence spread spectrum method and generate demodulated signals.

Abstract: A system for measuring an access time of a memory includes a first delay unit configured to delay a clock signal by a first delay time and to output a first delayed clock signal, a second delay unit configured to delay the clock signal by a second delay time greater than the first delay time and to output a second delayed clock signal, a memory configured to store data, the data being read from the memory in response to the first delayed clock signal, a detection data storage configured to store the data read from the memory in response to the second delayed clock signal, and a controller configured to measure an access time of the memory based on a comparison of the data in the detection data storage and the data in the memory, the first delayed clock signal and the second delayed clock signal.

Abstract: A touch sensor includes a panel including display pixels and sensing nodes, a touch-sensing block configured to sense a change in capacitance of the sensing nodes, and a timing controller configured to generate state information based on a polarity of data and/or an inflow of electrostatic discharge to the panel and/or a peripheral temperature and/or an on or off state of the panel. The touch-sensing block senses a presence or absence of a touch on or over the sensing nodes based on the state information and the change in capacitance of the sensing nodes.

Abstract: Disclosed is a display driver including an input pad configured to receive a supply voltage, a wiring line connected to the input pad, a digital-to-analog converter configured to output analog signals based on digital-to-analog conversion results of data, a plurality of output buffer units configured to buffer the analog signals, and a plurality of bias controllers connected to different positions of the wiring line. Each of the bias controllers independently controls a bias voltage of a corresponding one of the output buffer units based on the supply voltage supplied through the wiring line.

Abstract: A touch sensor is disclosed. The touch sensor includes a touch panel including a plurality of sensing nodes in columns and rows and sensing lines connected to the sensing nodes, a touch sensing unit configured to provide a driving signal to at least one of sensing lines to charge at least one of the sensing nodes during a first time period and discharge voltages on the sensing nodes during a second period, and a charge sharer or equalizer configured to short-circuit the sensing lines during the second time period.

Abstract: An image sensor includes a pixel array unit including an active pixel area including active pixels, a first dark area including first dark pixels, and a second dark area including second dark pixels, an offset extractor configured to extract a final dark offset value, and a corrector configured to correct pixel data values of the active pixels based on the final dark offset value. The offset extractor extracts a per-column dark offset value, a global dark offset value, a per-row average, and a per-row noise value, selects one of the extracted per-column dark offset value and global dark offset value, and extracts the final dark offset value from the per-row noise value and either the per-column dark offset value or the global dark offset value.

Abstract: In embodiments, a semiconductor device includes a high resistivity substrate, a transistor disposed on the high resistivity substrate, and a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is disposed in the high resistivity substrate. Further, a first well region having the first conductive type is disposed on the deep well region, and the transistor is disposed on the first well region.

Abstract: According to embodiments, methods of scanning a touch panel and a touch integrated circuit (IC) for performing the same are disclosed. The touch IC simultaneously supplies a first driving signal having a first phase and a second driving signal having a second phase to a first driving line and a second driving line of the touch panel, respectively, and detects a sensing signal from a sensing line crossing the first driving line and the second driving line. The touch IC acquires a first scanning signal corresponding to the first driving line and a second scanning signal corresponding to the second driving line from the sensing signal.

Abstract: An image sensor is disclosed. The image sensor includes a pixel array including a plurality of pixel units, a controller configured to drive the pixel array, and an analog-digital conversion block configured to convert a sensing signal output from the pixel array to a digital signal, wherein each of the pixel units includes a photodiode and a plurality of transistors on a semiconductor substrate, each of the transistors includes a gate electrode and a gate dielectric layer, each gate dielectric having a thickness, and the thickness of at least one of the gate dielectric layers is different from the thickness of at least one of the other gate dielectric layers.

Abstract: Disclosed is an image sensor that includes a pixel array including a plurality of unit pixels in a matrix having rows and columns, a binning sampling unit configured to (i) amplify with different gains signals from unit pixels selected from the unit pixels in each of the columns, and (ii) output a binning sampling signal according to an average of the amplified signals, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal.

Abstract: A touch sensor includes a touch panel including driving lines, sensing lines, node capacitors between neighboring or overlapping driving lines and sensing lines, and a sensing unit electrically connected to the sensing lines and configured to sense a capacitance from the touch panel. The sensing unit includes an input resistor having a first terminal connected to at least one of the sensing lines, a first amplifier including (i) input terminals respectively connected to a second terminal of the input resistor and a first power supply and (ii) a first output terminal, a feedback resistor having a first terminal connected to the first input terminal of the first amplifier, and a feedback amplifier having an input terminal connected to the first output terminal of the first amplifier and an output terminal connected to a second terminal of the feedback resistor. The gain of the feedback amplifier is less than 1.

Abstract: Disclosed is an output buffer. The output buffer includes a first amplifier configured to amplify an input signal, and output first to fourth amplified signals according to results of the amplification, a first transistor to receive the first amplified signal, a second transistor to receive the second amplified signal, a third transistor to receive the third amplified signal, a fourth transistor to receive the fourth amplified signal, a first node, connected to drains of the first and second transistors, a second node, connected to drains of the third and fourth transistors, an output node connected to the first and second nodes, and a first controller configured to selectively supply a control voltage to the gates of the first to fourth transistors in response to a control signal.

Abstract: In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high resistivity substrate. The passive device can include a shallow trench device isolation region having a plate shape and formed at a surface portion of the high resistivity substrate, deep trench device isolation regions extending downward from a lower surface of the shallow trench device isolation region so as to define at least one isolated region therebetween, at least one insulating layer formed on the high resistivity substrate, and at least one passive component formed on the insulating layer.

Abstract: Disclosed herein is a light emitting element driving apparatus for controlling a light emitting unit including serially connected light emitting element arrays. The apparatus includes a rectifying unit configured to provide a rectified signal to the light emitting unit according to a result of rectifying an alternating current (AC) signal, a switching unit configured to selectively connect output terminals of the light emitting element arrays to a first node, an amplifying unit configured to amplify each of reference voltages having different levels and a voltage of a second node and to generate first amplified signals controlling the switching unit according to an amplification result, a sensing resistor connected between the second node and an electrical ground, and a current sensing circuit configured to generate mirrored current by mirroring current supplied from the first node and to provide the mirrored current to the second node.

Abstract: Disclosed is a touch sensor including a touch panel including driving lines and sensing lines, a node capacitor being formed between the neighboring driving and sensing lines, and a sensing unit electrically connected to the sensing lines to sense variation in the capacitance of the node capacitor. The sensing unit includes an amplifier including a first input terminal configured to receive a signal from any one of the sensing lines, a second input terminal connected to a first power source, and an output terminal, a feedback capacitor connected between the first input terminal and the output terminal, and a current controller connected in parallel to the feedback capacitor between the first input terminal and the output terminal to control current flowing to the feedback capacitor.

Abstract: Disclosed is a light emitting device driving apparatus configured to control a light emitting unit including light emitting devices or array(s) thereof connected in series. The light emitting device driving apparatus includes a rectifier configured to rectify an AC signal and supply to the light emitting unit a ripple current signal, and a sequential driving controller configured to generate a reference current, compare the reference current with a channel current from the light emitting unit, and selectively connect one of channel lines connected to respective output terminals of the light emitting devices or array(s) thereof. The sequential driving controller adjusts a level and/or value of the reference current based on the ripple current signal. The reference current is a current flowing between the first node and a ground potential.

Abstract: A high voltage semiconductor device includes a well region of a first conductive type formed at a surface portion of a substrate, a gate electrode disposed on the well region, a source region formed at a surface portion of the well region adjacent to the gate electrode, a drain region formed at a surface portion of the well region adjacent to the gate electrode, and a drift region of a second conductive type disposed under the drain region.