Abstract: A broadband circularly-polarized spidron fractal antenna is disclosed. The broadband antenna of the present invention can realize a bandwidth exceeding 70% without using a multilayer substrate to implement the broadband properties, by forming a geometric structure of a slot, i.e., a spidron fractal, which has not been used in the conventional antennas, on the ground surface of the antenna. The present invention can also induce the radiation properties of a circularly-polarized wave from the properties of the spidron fractal shape, without employing an additional secondary circuit such as a phase distribution circuit for implementing the circularly-polarized wave. Due to such properties described above, the present invention can implement a small broadband circularly-polarized antenna that costs less to manufacture.

Abstract: An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.

Abstract: This invention relates to an object identification device, for the blind, that identifies objects such as walls and cars by detecting the ambient environment through a 94-GHz millimeter-wave image system mounted on the eyeglass and inform the situation to the user by transforming the identified signals to the voice or sound. This invention is designed to not only help the blind in walking but also provide the function to find the person who has a device realizing this invention.

Abstract: The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below. The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible.

Abstract: The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below. The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible.

Abstract: An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.

Abstract: Present invention relates to telecommunication switching systems and methods of packet switching and can be usable at development new high-speed telecommunication devices and equipment as switching structure.