Abstract: A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element 100 comprises, in the following order: an n-type group III nitride semiconductor layer 30; a group III nitride semiconductor laminated body 40 obtained by alternately laminating a barrier layer 40a and a well layer 40b narrower in bandgap than the barrier layer 40a in the stated order so that the number of barrier layers 40a and the number of well layers 40b are both N, where N is an integer; an AlN guide layer 60; and a p-type group III nitride semiconductor layer 70, wherein the AlN guide layer 60 has a thickness of 0.5 nm or more and 2.0 nm or less.

Abstract: A bonding material of a silver paste contains: fine silver particles having an average primary particle diameter of 1 to 200 nm, each of the fine silver particles being coated with an organic compound having a carbon number of not greater than 8, such as sorbic acid; and a solvent mixed with the fine silver particles, wherein a diol, such as an octanediol, is used as the solvent and wherein a triol having a boiling point of 200 to 300° C., a viscosity of 2,000 to 10,000 mPa·s at 20° C. and at least one methyl group, such as 3-methylbutane-1,2,3-triol or 2-methylbutane-1,2,4-triol, is mixed with the solvent as an addition agent.

Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.

Abstract: A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. An Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer are in contact with each other, or a final barrier layer is further provided between the Nth well layer and the AlN guide layer.

Abstract: Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting element 100 of this disclosure comprises an n-type semiconductor layer 30, a light-emitting layer 40, and a p-type semiconductor layers 60, on a substrate 10, in this order. The light-emitting layer 40 emits deep ultraviolet light. The p-type semiconductor layers 60 comprise a p-type first layer 60A and a p-type contact layer 60B directly on the p-type first layer 60A. The p-type contact layer 60B is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layer 60B from the p-type first layer 60A is 10% or higher.

Abstract: A carrier core material is represented by a composition formula MXFe3-XO4 (where M is at least one type of metal element selected from Mg, Mn, Ca, Ti, Cu, Zn and Ni, 0<X<1), in which part of M and/or Fe is substituted with Sr and formed of ferrite particles, and in the carrier core material, a Sr content is equal to or more than 2500 ppm but equal to or less than 12000 ppm, the amount of Sr eluted with pure water at a temperature of 25° C. is equal to or less than 50 ppm, an apparent density is equal to or more than 1.85 g/cm3 but equal to or less than 2.25 g/cm3 and magnetization ?1k when a magnetic field of 79.58×103 A/m (1000 oersteds) is applied is equal to or more than 63 Am2/kg but equal to or less than 75 Am2/kg.

Abstract: An e-type iron-based oxide magnetic particle powder has narrow particle size distribution and has a low content of fine particles which do not contribute to magnetic recording characteristics. As a result, a narrow coercive force distribution is achieved and the powder is suitable for increasing recording density of a magnetic recording medium. The powder containing substituting metal elements can be obtained by: adding an alkali to an aqueous solution containing trivalent iron ions and ions of the metals for partially substituting Fe sites to neutralize the aqueous solution to a pH of 1.5 to 2.5; then adding a hydroxycarboxylic acid; further adding the alkali to neutralize the aqueous solution to a pH of 8.0 to 9.0; washing with water a precipitation of an iron oxyhydroxide containing the substituting metal elements produced; and coating the iron oxyhydroxide containing the substituting metal elements with a silicon oxide and heating the resultant.

Abstract: Provided is a method of producing an n-type ohmic electrode that can form a good ohmic contact with an n-type AlxGa1-xN (0.5?x?1) layer. The method of producing an n-type ohmic electrode includes: a first step of forming a first layer 11 made of one of Ti and Hf on a surface of a layer 30; a second step of forming a second layer 12 made of Sn on the surface of the first layer 11; a third step of forming a third layer 13 made of one of V and Mo on the surface of the second layer 12; a fourth step of forming a fourth layer 14 made of Al on the surface of the third layer 13; and a fifth step of performing heat treatment on the first layer 11, the second layer 12, the third layer 13, and the fourth layer 14.

Abstract: To provide a silver-bismuth powder, which includes: silver; and bismuth, wherein a mass ratio (silver:bismuth) of the silver to the bismuth is 95:5 to 40:60, wherein a cumulative 50% point of particle diameter (D50) of the silver-bismuth powder in a volume-based particle size distribution thereof as measured by a laser diffraction particle size distribution analysis is 0.1 ?m to 10 ?m, and wherein an oxygen content of the silver-bismuth powder is 5.5% by mass or less.

Abstract: Provided is a silver-tellurium-coated glass powder including: a tellurium-based glass powder containing tellurium in an amount of 20% by mass or more; and a coating layer on a surface of the tellurium-based glass powder, the coating layer containing silver and tellurium as a main component. Preferable aspects include an aspect where the coating layer containing silver and tellurium as a main component further contains a component that is other than silver and tellurium and contained in the tellurium-based glass powder, and an aspect where the component that is lo other than silver and tellurium and contained in the tellurium-based glass powder contains one or more kinds selected from zinc, lead, bismuth, silicon, lithium, and aluminum.

Abstract: There is provided a ferrite powder for bonded magnets capable of producing ferrite bonded magnets with high BHmax, excellent in MFR when converted to a compound, with high p-iHc, wherein an average particle size of particles obtained by a dry laser diffraction measurement is 5 ?m or less, a specific surface area is 1.90 m2/g or more and less than 3.00 m2/g, a compression density is 3.40 g/cm3 or more and less than 3.73 g/cm3, and a compressed molding has a coercive force of 2800 Oe or more and less than 3250 Oe.

Abstract: There are provided a bonding material, which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate by preventing voids from being generated in a metal bonding layer and/or on the boundary between the metal bonding layer and the Si chip or metal copper substrate even if no pre-burning is carried out when the Si chip is bonded to the metal substrate, and a bonding method using the same. In a bonding material of a metal paste containing metal particles, a solvent and a dispersant, the metal particles containing first metal particles (small particles) having an average primary particle diameter of 1 to 40 nm, second metal particles (medium particles) having an average primary particle diameter of 41 to 110 nm, and third metal particles (large particles) having an average primary particle diameter of 120 nm to 10 ?m, the weight percentages of the first, second and third metal particles being 1.

Abstract: To provide magnetic composite particles which can be separated from a sample solution in a short period of time using magnetism, and furthermore, have an excellent dispersion stability in the sample solution, which are magnetic composite particles in which an outer shell is formed on surfaces of core particles containing an inorganic oxide or a polymer, wherein the outer shell comprises magnetic nanoparticles and a silicon compound, the value of the volume average particle diameter (dTEM) of the magnetic composite particles measured by a transmission electron microscope is 30 nm or more to 210 nm or less, and the value of (dDLS)/(dTEM) which is the ratio of the value of the particle diameter (dDLS) of the particles measured by a dynamic light scattering method and the value of the volume average particle diameter (dTEM) is 2.0 or less.

Abstract: Provided is a semiconductor optical device with light extraction efficiency or light collecting efficiency higher than that of conventional devices and with a reduced peeling ratio of a wiring electrode portion, and a method of manufacturing the same. In the semiconductor optical, a wiring electrode portion 120 is provided on a surface of a semiconductor layer 110 that serves as a light emitting surface or a light receiving surface, the line width W1 of the wiring electrode portion 120 is 2 ?m or more and 5 ?m or less, the wiring electrode portion 120 has a metal layer 121 on the semiconductor layer 110 and a conductive hard film 122 on the metal layer 121, and the conductive hard film 122 is harder than the metal layer 121.

Abstract: There is provided an inexpensive silver particle dispersing solution being usable as a slurry for ink jet, a method for producing the same, and a method for producing a conductive film using the silver particle dispersing solution. In a silver particle dispersing solution containing a silver powder and a solvent, the silver powder has an average primary particle diameter (DSEM) of 0.15 to 0.5 ?m, and the ratio (D50/DSEM) of a particle diameter (D50), which corresponds to 50% of accumulation in volume-based cumulative distribution of the silver powder, to the average primary particle diameter (DSEM) is not less than 1.7, the silver powder having a fatty acid adhered to the surface thereof, and the solvent containing a monohydric higher alcohol having a carbon number of 6 to 12, butyl carbitol or butyl carbitol acetate as the main component thereof.

Abstract: An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 ?·cm.

Abstract: After preparing a silver-coated copper powder wherein the surface of a copper powder having an average particle diameter of 0.1 to 100 ?m is coated with silver, the silver-coated copper powder is sprayed into the tail flame region of a thermal plasma to cause silver on the surface of the copper powder to diffuse in the grain boundaries of copper on the inside of the copper powder, and thereafter, the surface of the copper powder is coated with silver to produce a metal composite powder wherein the percentage of the area occupied by silver on a cross section of the metal composite powder is 3 to 20% and wherein the surface thereof is coated with silver.

Abstract: To provide a silver powder including alkenylsuccinic anhydride and/or alkenylsuccinic acid on a surface of the silver powder.