Abstract: In general terms, this disclosure is directed to a window assembly and a window spacer. In one possible configuration and by non-limiting example, the window assembly includes a first sheet, a second sheet, and a spacer arranged between the first sheet and the second sheet. The spacer includes a first elongate strip, a second elongate strip, and continuous sidewalls or a plurality of sidewalls. In some embodiments the sidewalls include a first portion having a first fastening mechanism and a second portion have a second fastening mechanism. The first fastening mechanism is arranged and configured to securely engage with the second fastening mechanism to connect the first portion with the second portion.
Abstract: A sealed unit includes at least two sheets of transparent or translucent material separated from each other by a spacer. One example of a spacer for a sealed unit includes a first elongate strip, a second elongate strip, and filler arranged therebetween. The first and second elongate strips have a small undulating shape in some embodiments. Methods of making spacers and window assemblies as well as devices for use in the manufacture of spacers and assemblies are disclosed including a manufacturing jig and a spool storage rack. The spool storage rack stores a plurality of spools configured to store spacer materials thereon.
Abstract: A sealed unit includes at least two sheets of material separated by a spacer. In one example, a spacer includes an elongate strip having a first longitudinal edge and a second longitudinal edge and defines a plane extending between at least portions of the first and second longitudinal edges. The spacer also includes at least a first stabilizer connected to the elongate strip adjacent the first longitudinal edge. The first stabilizer has a first surface arranged substantially perpendicular to the plane. The first surface is adapted to support the elongate strip against a first sheet of material. Some embodiments include a second stabilizer adapted to support the elongate strip against the second sheet of material.
Abstract: A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.
Type:
Application
Filed:
July 2, 2008
Publication date:
November 6, 2008
Applicants:
Semiconductor Leading Edge Technologies, Inc., TOKYO ELECTRON LIMITED
Abstract: An apparatus for turning a hard and/or brittle material includes a precision workpiece spindle, a workpiece support, a hard and/or brittle workpiece rigidly coupled to the workpiece support, and a diamond tool blade rigidly coupled to a spin-turner mechanism. The diamond tool blade is formed to include a cutting edge arranged to confront the hard and/or brittle workpiece to remove material from the workpiece to form precision-turned components such as optical lenses, mirrors, and optical molds.
Abstract: A system for providing access to a network is provided. The system includes a management interface system that receives management data from one or more management systems, where each management system provides a type of management data for the network, such as device status data, event data, device performance monitoring data, or other suitable data. A portal system connected to the management interface system receives the management data and presents the management data in a predetermined format, such as in one or more view windows, such that management data from incompatible management systems can be presented in a single user-viewable display.
Type:
Grant
Filed:
March 19, 2001
Date of Patent:
September 11, 2007
Assignee:
Edge Technologies, Inc.
Inventors:
Edward M. Willhide, Nathaniel H. Cooper, Steven S. Hodecker, Hugh B. Warren
Abstract: A thin film battery comprises a substrate with a front side and a back side. A first battery cell is provided on the front side of the substrate, the first battery cell including an electrolyte between a pair of electrodes. A second battery cell is provided on the back side of the substrate, the second battery cell also including an electrolyte between a pair of electrodes. The battery is capable of providing an energy density of more than 700 wh/l and a specific energy of more than 250 wh/kg. A method of annealing a deposited thin film is also described.
Type:
Grant
Filed:
December 7, 2004
Date of Patent:
March 6, 2007
Assignee:
Front Edge Technology, Inc.
Inventors:
Victor Krasnov, Kai-Wei Nieh, Su-Jen Ting
Abstract: An apparatus for turning a hard and/or brittle material includes a precision workpiece spindle, a workpiece support, a hard and/or brittle workpiece rigidly coupled to the workpiece support, and a diamond tool blade rigidly coupled to a spin-turner mechanism. The diamond tool blade is formed to include a cutting edge arranged to confront the hard and/or brittle workpiece to remove material from the workpiece to form precision-turned components such as optical lenses, mirrors, and optical molds.
Abstract: A method comprising applying sonication to a grain-based liquid medium processing stream of a starch-to-alcohol production process with one or more transducers is provided. In one embodiment, the one or more transducers apply sonication to the grain-based liquid medium processing stream in one or more locations. In one embodiment, the starch-to-alcohol production process is a starch-to-ethanol production process. In one embodiment, the starch-to-ethanol production process is a dry grind process, modified dry grind process or wet mill process. The methods of the present invention utilize sonication at the frequencies and intensities required on an industrial scale to reduce the production cost of alcohol, such as ethanol, by improving alcohol yield per bushel, reducing processing times for higher throughput, reducing operating costs, and increasing the marketability of co-products, among other benefits.
Type:
Grant
Filed:
August 26, 2004
Date of Patent:
September 5, 2006
Assignees:
UltraForce Technology LLC, Edge Technologies, Inc.
Inventors:
Michael T. Kinley, Jonathan D. Snodgrass, Bradley Krohn
Abstract: A battery comprises a substrate having a cathode with a lower surface contacting the substrate and an opposing upper surface. A cathode current collector comprises conducting lines that contact the upper surface of the cathode. An electrolyte at least partially extends through the cathode current collector and contacts the cathode. An anode contacts the electrolyte, and optionally, an anode current collector contacts the anode. Also, because the cathode is formed on the substrate before the cathode current collector, the cathode current collector advantageously does not have to be fabricated out of a metal that is capable of withstanding further processing of the cathode, such as annealing of the cathode.
Abstract: A new and useful ball range system for wagering is disclosed. The system incorporates targets having RFID readers therein, coupled with at least one server communicating with each target, and further having the potential to operate over more than one physical site. The wagering supported is characterized by player-funded winnings, of which pari-mutuel betting on ball-based games is one example. The system enables operators to offer many wagering games based on a games outcome in an efficient and exciting manner to a player using player-funded pools.
Abstract: A new and useful golf range target and system is disclosed. The new target incorporates an area having a top surface that will guide a golf ball which hits the surface to a golf ball receiver. The target receiver includes an RFID reader and a GPS receiver, which, upon the passing of a golf ball through the receiver, reads the golf ball ID using an RFID tag in the golf ball, then sends that data along with GPS data back to a server. The target is designed to be mobile, or moveable, by range personnel. The server then stores the data, and makes calculations such as the distance the golf ball traveled, the point value of the target hit (if any), and related fun information. This enables players to get real-time feedback using the targets, and allows ranges to encourage range play by keeping scores, awarding prizes, etc., based on target hits and other criteria.
Type:
Grant
Filed:
January 24, 2002
Date of Patent:
February 14, 2006
Assignee:
Edge Technology
Inventors:
Robert Anthony Luciano, Jr., Robert Steven Anderson, Russell Tower Bradford, Charles Theodore Schreiber
Abstract: The invention is directed to an improved desalination process to produce potable water. The process represents an improvement of hybrid of membrane and desalination technologies. The improvement of the invention comprises the operation of an ion selective membrane at a variable pressure as a function of the cost of electricity to form a softened salt water that is blended in variable proportions, to increase the top operating temperature of the desalination system and increase recovery of potable water, with untreated salt water.
Type:
Grant
Filed:
August 18, 2004
Date of Patent:
February 14, 2006
Assignee:
L.E.T., Leading Edge Technologies Limited
Abstract: A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.
Type:
Application
Filed:
January 21, 2005
Publication date:
February 2, 2006
Applicants:
Semiconductor Leading Edge Technologies, Inc., TOKYO ELECTRON LIMITED
Abstract: In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.
Type:
Grant
Filed:
June 20, 2000
Date of Patent:
January 31, 2006
Assignees:
Semiconductor Leading Edge Technologies, Inc., ASM Japan K.K.
Abstract: A method of manufacturing a membrane mask for use in an electron beam exposure apparatus that exposes resist material, comprises manufacturing the membrane mask. A membrane thickness is determined so that an operation time that the electron beam exposure apparatus spends in exposing the resist material to form a predetermined pattern using the membrane mask is comparable to or less than an operation time that the electron beam exposure apparatus spends in exposing the resist material to form the predetermined pattern using complementary masks.
Type:
Application
Filed:
February 11, 2005
Publication date:
January 26, 2006
Applicant:
Semiconductor Leading Edge Technologies, Inc.
Abstract: A method of designing a charged particle beam mask, comprises locating a plurality of identical chip patterns on a charged particle beam mask in which a plurality of subfields that can be transferred at a time are provided vertically and horizontally. The chip patterns have an arrangement pitch that is an integer multiple of the subfield.
Type:
Application
Filed:
December 20, 2004
Publication date:
January 26, 2006
Applicant:
Semiconductor Leading Edge Technologies, Inc.
Abstract: In a method for manufacturing a semiconductor device, gate insulation films and gate electrodes are first formed on a substrate. An impurity is implanted into each gate electrode. Next, a first heat treatment is performed to the substrate for diffusing the impurity in the gate electrodes. After the heat treatment, a second heat treatment is performed for releasing stress generated in the substrate in the first heat-treatment. Thereafter, an impurity is implanted into an area to become an implanted region of the substrates using the gate electrodes as masks, and a third heat treatment is performed for activating the impurity implanted.
Type:
Application
Filed:
December 6, 2004
Publication date:
January 12, 2006
Applicant:
Semiconductor Leading Edge Technologies, Inc.