Patents Assigned to Electronics Co., Ltd.
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Publication number: 20250254880Abstract: Provided are a vertical nonvolatile memory device and an electronic apparatus including the same. The vertical nonvolatile memory device incudes a plurality of cell strings, and each of the plurality of cell strings includes a channel layer, a charge tunneling layer arranged on the channel layer, a charge trap layer arranged on the charge tunneling layer, a charge blocking layer arranged on the charge trap layer, a gate electrode arranged on the charge blocking layer, and a boron nitride film arranged on the gate electrode, wherein the gate electrode and the boron nitride film are alternately stacked.Type: ApplicationFiled: December 17, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Taehoon KIM, Jaewon KIM, Hyeonjin SHIN, Vanluan NGUYEN, Taejin CHOI
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Publication number: 20250255008Abstract: Provided is a protection diode for protecting a transistor from a transient voltage, the protection diode including a substrate, a lower insulation film on the substrate, an oxide semiconductor layer on the lower insulation film, a first electrode and a second electrode arranged on the oxide semiconductor layer to be horizontally spaced apart from each other and providing a Schottky contact, and an interlayer insulation film surrounding the first electrode and the second electrode on the oxide semiconductor layer, wherein the first electrode is electrically connected to a gate electrode of the transistor, and the second electrode is connected to a ground level or a certain DC level.Type: ApplicationFiled: January 8, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Wonsok LEE, Minhee CHO, Daewon HA
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Publication number: 20250252578Abstract: A method for generating a mask image for fabricating a mask includes: generating the mask image from a target pattern using a first artificial intelligence (AI) model; calculating a first loss function based on a difference between the mask image and a mask image corrected according to a mask rule; and updating the first AI model based on the first loss function.Type: ApplicationFiled: February 3, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Youngchul KWAK, Seong-Jin PARK, Deokyoung KANG, Serim RYOU, Seon Min RHEE
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Publication number: 20250255018Abstract: An image sensor including a pixel group including a plurality of unit pixels, each of the plurality of unit pixels including an infrared pixel including a first photoelectric conversion element (PD); and a non-infrared pixel including a second PD having a smaller light-receiving area than the first PD in a plan view, the non-infrared pixel configured to sense a visible light, a plurality of infrared pixels arranged in a first direction and a second direction perpendicular to the first direction, and the non-infrared pixel disposed diagonally to the infrared pixel in a third direction different from the first and second directions.Type: ApplicationFiled: January 17, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Jonghyuk WOO, Min-Sun KEEL
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Publication number: 20250249487Abstract: A method of processing a substrate includes supplying an organic solvent to the substrate, transferring the substrate to a processing space in a chamber, supplying fluid to the processing space of the chamber and pressurizing the processing space, maintaining pressure in the processing space of the chamber for a period of time subsequently to pressurizing the processing space, and depressurizing the processing space of the chamber subsequently to maintaining the pressure in the processing space. The pressurizing the processing space of the chamber includes causing the pressure in the processing space to increase in each of a first pressurization period, a second pressurization period, and a third pressurization period that are successive. A pressure increase rate in the second pressurization period is greater than a pressure increase rate in the third pressurization period.Type: ApplicationFiled: October 11, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Jihoon JEONG, Taeheon KIM, Junho YOON, Jongwon LEE, Junho LEE, Jiwoong JUNG, Jeonghwa HONG, Younghoo KIM, Woogwan SHIM
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Publication number: 20250251859Abstract: A storage device may include a plurality of non-volatile memories, a host interface configured to receive at least one packet including a TRIM command from a host device, and the host interface configured to determine a trim path for processing the TRIM command by comparing a first trim range threshold value and a trim range of the TRIM command, a trim manage module configured to generate status data by monitoring the at least one packet, the trim manage module configure to determine the first trim range threshold value based on the status data, and a processor configured to process the TRIM command based on the trim path.Type: ApplicationFiled: October 29, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Seungjun YANG, Nam Wook KANG
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Publication number: 20250252045Abstract: A storage device according to some example embodiments comprises a non-volatile memory including a first memory including a plurality of zones configured to sequentially store data based on a write pointer, the write pointer indicating a position to write the data, and a second memory configured to store preliminary data to be written in the plurality of zones, and a storage controller configured to receive a plurality of operation requests, each of the plurality of operation requests including a logical block address, a write command, and write data, and store first write data corresponding to a first operation request in the second memory as first preliminary data, if the position of a first logical block address corresponding to the first operation request among the plurality of operation requests and the write pointer does not match.Type: ApplicationFiled: September 13, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Gyuseok CHOE, Myungsub SHIN, Seongheum BAIK, Kyung Phil YOO, Seongyong JANG
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Publication number: 20250253302Abstract: A semiconductor package includes a package substrate including a first conductive pad at an upper portion thereof, a lower semiconductor chip stack structure including dynamic random access memory chips that are stacked in a vertical direction on the package substrate and electrically connected to each other by a through electrode, an upper semiconductor chip stack structure including flash memory chips, each of the flash memory chips may include a second conductive pad at an upper portion thereof, stacked in the vertical direction on the lower semiconductor chip stack structure, a conductive connection pattern contacting an upper surface of the first conductive pad and extending in the vertical direction, and a bonding wire contacting at least one of the second conductive pads and being electrically connected to the conductive connection pattern.Type: ApplicationFiled: December 23, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Wongil HAN, Hyosung KOO, Byongjoo KIM, Youehwang YOON, Saetbyeol LEE
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Publication number: 20250254852Abstract: Provided are a semiconductor device, and/or an electronic device and a memory device both including the semiconductor device. The semiconductor device includes a lower electrode, an upper electrode spaced apart from the lower electrode, a channel layer between the lower electrode and the upper electrode, a gate insulating layer in the channel layer, an insertion layer provided between the channel layer and the gate insulating layer, and a gate electrode on the gate insulating layer. The channel layer has a vertical channel structure extending in a vertical direction from the lower electrode toward the upper electrode. The insertion layer may include a nitride of a metal and/or an oxynitride of a metal, and the metal may include one or more of niobium (Nb), vanadium (V), or tantalum (Ta).Type: ApplicationFiled: January 13, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Moonil JUNG, Sangwook KIM, Younjin JANG, Kyooho JUNG
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Publication number: 20250254445Abstract: An image sensor includes a first pixel and a second pixel. The first pixel includes a first photodiode, a second photodiode at least partially overlapping the first photodiode in a first direction, a first metal shield on one photodiode of the first photodiode or the second photodiode in a vertical direction perpendicular to the first direction, a first color filter on another photodiode of the first photodiode or the second photodiode in the vertical direction, and a first micro lens on both the first metal shield and the first color filter in the vertical direction. The second pixel includes a third photodiode, a fourth photodiode at least partially overlapping the third photodiode in the first direction, a second color filter on both the third photodiode and the fourth photodiode in the vertical direction, and a second micro lens on the second color filter in the vertical direction.Type: ApplicationFiled: December 16, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Taesung LEE, Hyungeun YOO, Yunki LEE
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Publication number: 20250253828Abstract: A filtering device for passing a frequency component above a first cutoff frequency in an input signal includes an amplification circuit configured to generate an amplification signal based on the input signal, a first feedback signal, and a second feedback signal, a filter circuit configured to generate an output signal by passing a frequency component above a second cutoff frequency higher than the first cutoff frequency in the amplification signal, and a feedback circuit configured to generate the first feedback signal and the second feedback signal by amplifying the output signal, the filter circuit configured to set the first cutoff frequency based on a first amplification value corresponding to a gain of the amplification circuit and the second cutoff frequency.Type: ApplicationFiled: January 9, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Kyunghwan KIM, Byeongtaek MOON, Hyunchul PARK, Sangmin YOO, Joonhoi HUR
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Publication number: 20250255091Abstract: Provided in the present application are an organic light-emitting diode and a display apparatus. The organic light-emitting diode includes at least one light-emitting layer, which includes at least one phosphorescence sensitized light-emitting layer, wherein the phosphorescence sensitized light-emitting layer includes a host material, a phosphorescent sensitizer and a narrow-spectrum fluorescent material, and the full width at half maximum of the narrow-spectrum fluorescent material is less than 50 nm. The present application can improve the performance, such as the efficiency, of an organic light-emitting diode.Type: ApplicationFiled: April 21, 2025Publication date: August 7, 2025Applicants: KunShan Go-Visionox Opto-Electronics Co., Ltd, TSINGHUA UNIVERSITYInventors: Guomeng LI, Lian DUAN, Baoyu LI, Minghan CAI, Bin LIU, Mengzhen LI, Hongyu WANG
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Publication number: 20250254856Abstract: Provided are a capacitor and an electronic device including the same. The capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer includes an intervening layer in the dielectric layer, and the intervening layer includes aluminum oxide and gallium oxide.Type: ApplicationFiled: September 30, 2024Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Haeryong KIM, Eunae CHO, Jungyun WON, Jooho LEE, Narae HAN
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Publication number: 20250252536Abstract: Disclosed is an image fusion method and apparatus. The fusion method includes detecting first feature points of an object in a first image frame from the first image frame; transforming the first image frame based on the detected first feature points and predefined reference points to generate a transformed first image frame; detecting second feature points of the object in a second image frame from the second image frame; transforming the second image frame based on the detected second feature points and the predefined reference points to generate a transformed second image frame; and generating a combined image by combining the transformed first image frame and the transformed second image frame.Type: ApplicationFiled: April 24, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Minsu KO, Seungju HAN, Jaejoon HAN, Jihye KIM, SungUn PARK, Chang Kyu CHOI
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Publication number: 20250250683Abstract: An etching composition may include an oxidizing agent, an accelerator, an ammonium salt, and an aqueous solvent, wherein the accelerator may include one or more compounds represented by Formula 1, and the ammonium salt may include at least one compound having a structure in which at least one of hydrogen ions (H+) of a hydroxyl group (*—OH) or a thiol group (*—SH) included in the accelerator is substituted with an ammonium cation (NH4+): Formula 1 is as described in the present specification.Type: ApplicationFiled: January 14, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Kyuyoung HWANG, Byungjoon KANG, Daihyun KIM, Sungmin KIM, Jina KIM, Mihyun PARK, Insun PARK, Jungmin OH, Kum Hee LEE, Cheol HAM
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Publication number: 20250251659Abstract: A method for generating a mask image may include generating the mask image from a target pattern by using a first artificial intelligence (AI) model, modifying the mask image by using an activation function, calculating a gradient of the activation function by using a gradient of a loss function determined based on a difference between the target pattern and a pattern predicted through an optical simulation the modified mask image performed by a second AI model, and updating the modified mask image based on the gradient of the activation function.Type: ApplicationFiled: February 3, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Youngchul KWAK, Deokyoung KANG, Seong-Jin PARK, Serim RYOU, Seon Min RHEE
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Publication number: 20250253221Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a first redistribution substrate and a first semiconductor device on the first redistribution substrate. The first redistribution substrate includes a first dielectric layer that includes a first hole, an under-bump that includes a first bump part in the first hole and a second bump part that protrudes from the first bump part onto the first dielectric layer, an external connection terminal on a bottom surface of the first dielectric layer and connected to the under-bump through the first hole, a wetting layer between the external connection terminal and the under-bump, and a first barrier/seed layer between the under-bump and the first dielectric layer and between the under-bump and the wetting layer.Type: ApplicationFiled: April 28, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Gwangjae JEON, Jung-Ho PARK, Seokhyun LEE, Yaejung YOON
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Publication number: 20250251505Abstract: A signal processor includes a first filter circuit configured to generate an output signal based on an input signal and a feedback signal, the first filter circuit including a first resistor and a first capacitor, a filtering frequency range of the signal processor being set based on a first resistance of the first resistor and a first capacitance of the first capacitor, a second filter circuit connected to a feedback path of the first filter circuit, the second filter circuit being configured to generate an intermediate signal based on the output signal, and an offset cancellation circuit connected to the feedback path of the first filter circuit, the offset cancellation circuit being configured to generate the feedback signal based on the intermediate signal.Type: ApplicationFiled: January 14, 2025Publication date: August 7, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Kyunghwan KIM, Byeongtaek MOON, Hyunchul PARK, Sangmin YOO, Sangsung LEE, Joonhoi HUR
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Patent number: 12382254Abstract: A method for sharing a reason cause for a mission critical communication (MCX) communication over pre-established session in an MCC network is provided. The method includes transmitting, to the server, a call initiation request to initiate a call, wherein the call initiation request includes first information on a session type and second information on a resource list, receiving, from the server, a mission critical pre-established session control (MCPC) connect message including a security message, determining whether an authentication for the security message is successful, and transmitting, to the server, a first MCPC acknowledgement message including a reason cause field to inform a reason for terminating the call in response to determining that the authentication for the security message is not successful.Type: GrantFiled: August 8, 2022Date of Patent: August 5, 2025Assignee: Samsung Electronics Co., Ltd.Inventors: Vengataraaman Ramamoorthy, Kiran Gurudev Kapale, Siva Prasad Gundur, Vijay Sangameshwara
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Patent number: 12379839Abstract: An electronic device may include: a display for displaying content; a memory for storing data corresponding to the content; and a processor operatively connected to the display and the memory, wherein the processor may be configured to: display content on the display; in response to a user input related to copying, store at least a partial area of the content as first clip data; generate second clip data different from the first clip data on the basis of at least a part of a result of image or text analysis relating to the first clip data; and display, on the display, a first indicator relating to the first clip data and a second indicator relating to the second clip data. Other various embodiments identified through the specification are possible.Type: GrantFiled: July 12, 2023Date of Patent: August 5, 2025Assignee: Samsung Electronics Co., Ltd.Inventors: Dahye Yoon, Junbae Lee, Sangheon Kim, Yeunwook Lim