Abstract: A semiconductor device includes a substrate, an insulating layer formed on the substrate, an active layer formed on the insulating layer, and a metal layer formed on a back surface of the substrate, the substrate and the metal layer being in ohmic contact. By bringing the substrate and the metal layer into ohmic contact, the resistance difference between the substrate and the metal layer can be reduced.

Abstract: In the case of a conventional output buffer circuit, it is difficult to adjust rising and falling times of a signal outputted from each of differential output terminals (OUTP/OUTN). Provided is an output buffer circuit including: a delay circuit including a first, second and third delay paths coupled to a first, second and third nodes, respectively, each of the first, second, and third delay paths performing time shifting transmission for the input signal, thereby extracting a first, second and third signals from the first, second and third nodes, respectively; a first output buffer coupled from the first node to drive an output terminal in response to the first signal; a second output buffer coupled from the second node to drive the output terminal in response to the second signal; and a third output buffer coupled from the third node to drive the output terminal in response to the third signal.

Abstract: A semiconductor apparatus comprises a plurality of transistor devices including a control terminal being inputted with a control signal and a first and a second terminals that a current flows therein according to the control signal, and a plurality of substrate conductive portions each formed in a region different from a region where the plurality of transistor devices are formed therein, wherein the transistor devices are connected to the substrate conductive portions, and each of the substrate conductive portion includes a semiconductor layer separated from other substrate conductive portions.