Abstract: A press-fit fixing portion fixes a drive unit and a relay unit by press-fitting a claw portion and the recess portion. A sealing member is provided on an outside of the relay unit and the drive unit. An inner cover forms a sealed space for sealing an arc-extinguishing gas together with the sealing member. An electromagnetic relay is configured to make it possible both an adjustment of a press-fitting amount of the claw portion and the recess portion and an adjustment of the gap between a ceramic insulator at an end of a shaft and a movable element by making each of the relay unit and the drive unit in a manufacturing process to the same state as in when a magnetizing coil is energized.

Abstract: A first semiconductor element (laser diode) and a second semiconductor element (laser diode) are connected to each other in series between a wiring electrically connected to an anode of the first semiconductor element and a wiring electrically connected to a cathode of the second semiconductor element. In this case, each of the first semiconductor element and the second semiconductor element includes a laminated pattern having an emission layer and a plurality of semiconductor layers covering this laminated pattern.

Abstract: A method of stabilizing data of digital signals is provided. The method includes steps of: setting a boundary coefficient; reading a piece of digital data; defining a value of the piece of digital data as a center value; outputting the value of the piece of digital data; reading a next piece of digital data; subtracting a value of the next piece of digital data from the previously outputted value to obtain a positive difference or a negative difference; and determining whether or not an absolute value of the positive or negative difference is larger than the boundary coefficient, if not, outputting the center value, if yes, updating the center value such that the updated center value is equal to the value of the next piece of digital data, and outputting the updated center value.

Abstract: A semiconductor device includes a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate. The ferroelectric film and a metal film are not formed just above an element isolation region formed in a trench in an upper surface of the semiconductor substrate, but are formed on the semiconductor substrate in the active region defined by the element isolation region to prevent a state in which a polarization state in the ferroelectric film of the active region and a polarization state in the ferroelectric film on the element isolation region differ from each other.

Abstract: The semiconductor device includes a frequency output circuit that outputs a clock signal having a specified frequency, a circuit block that realizes a predetermined function, and a standby controller that controls a standby mode of the circuit block in accordance with the clock signal. Here, the standby controller includes a control circuit that outputs state information corresponding to the control of the standby mode, a frequency control signal that designates the frequency of the clock signal output from the frequency output circuit in accordance with the state information, and a frequency selection circuit that outputs count information that designates the duration of the state transition of the circuit block.

Abstract: Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Abstract: A semiconductor device comprising a wiring member with which a semiconductor chip is electrically connected including: a first wiring layer having a plurality of first conductive patterns; a second wiring layer arranged next to the first wiring layer in a thickness direction of the wiring member, and having a second conductive pattern; and a third wiring layer arranged next to the second wiring layer in the thickness direction of the wiring member, and having a third conductive pattern. Here, in plan view, a first opening portion of each of two, which are arranged next to each other, of a plurality of first opening portions each penetrating through the second conductive pattern is overlapped with a pair of differential signal wirings contained in plurality of first conductive patterns, and is overlapped with two or more of a plurality of second opening portions each penetrating through the third conductive pattern.

Abstract: A first ESD protection circuit is provided between a first high-potential side power supply and a first low-potential side power supply of a first power supply system and a second ESD protection circuit is provided between a second high-potential side power supply and a second low-potential side power supply of a second power supply system. A coupling circuit includes a bidirectional diode and couples the first and second low-potential side power supplies. A first transistor is composed of an n-channel MOS transistor, has a drain coupled to the first high-potential side power supply of the first power supply system, and has a back gate coupled to the second low-potential side power supply of the second power supply system. A resistor element is inserted in series between the drain of the first transistor and the first high-potential side power supply.

Abstract: A first gate electrode is formed on a semiconductor substrate via a first insulating film containing a metal element. A sidewall insulating film is formed on a side surface of the first gate electrode. A second gate electrode is formed on the semiconductor substrate via a second insulating film. The second gate electrode is formed so as to adjacent to the first gate electrode via the second insulating film. The second insulating film is made of a stacked film having a third insulating film, a fourth insulating film having a charge accumulating function, and a fifth insulating film. The third insulating film is formed on the semiconductor substrate as a result of an oxidation of a portion of the semiconductor substrate, and formed on the side surface of the first gate electrode as a result of an oxidation of the sidewall insulating film, by the thermal oxidation treatment.

Abstract: A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.

Abstract: A technique capable of improving linearity at a low illuminance is provided. A solid-state sensing image device includes: a pixel array including a plurality pixels arranged in a matrix form and a plurality of pixel signal lines connected to the plurality of pixels and receiving pixel signals supplied from the plurality pixels; a column-parallel A/D converting circuit connected to the plurality of pixel signal lines; and a reference-voltage generating circuit generating ramp-wave reference voltage that linearly changes in accordance with time passage. The column-parallel A/D converting circuit includes a first A/D converter, the first A/D converter includes: a first input terminal connected to the pixel signal line; a second input terminal receiving the reference voltage; and an offset generating circuit connected to the first input terminal and generating an offset voltage for the first input terminal.

Abstract: Placement of bridges connecting CAE tools and virtual ECU simulation tools is facilitated. A virtual developmental environment apparatus includes a processing execution unit and a memory for storing a MILS model including a controller block and a plant block, first setting information, a program for realizing a function in the controller block used in executing simulation of the virtual ECU, and second setting information. The processing execution unit identifies a controller block in the MILS model based on the first setting information, arranges a bridge for connecting the input port and the output port and the I/O port of the virtual ECU to the input port and the output port of the identified controller block, and connects the bridge and the I/O port of the virtual ECU based on the second setting information.

Abstract: A method for manufacturing a circuit board structure with a waveguide is provided. The method includes: providing a first substrate unit, a second substrate unit, a third substrate unit, and two adhesive layers, the first substrate unit including a first dielectric layer and a first conductive layer, the first conductive layer including a first shielding area and two first artificial magnetic conductor areas disposed on two sides of the first shielding area; the second substrate unit including a second dielectric layer and a second conductive layer, the second conductive layer including a second shielding area; the third substrate unit defining a first slot, and the adhesive layer defining a second slot; stacking the first substrate unit, one of the adhesive layers, the third substrate unit, another one of the adhesive layers, and the second substrate unit in that order; pressing the intermediate body.

Abstract: A foreign object detecting system and a method are provided. A control circuit controls a light transmitter and a light receiver. The light transmitter is disposed adjacent to a detected object and emits a light signal toward the detected object. The light receiver is disposed adjacent to the detected object in a path along which the light signal reflected by the detected object travels. The light receiver receives the light signal reflected to the light receiver. In a pre-operation, the control circuit defines the light signal received by the light receiver when the foreign object is not on the detected object as a first reflected light signal. In a detection operation, the control circuit determines that a difference exists between the light signal currently received by the light receiver and the first reflected light signal, the control circuit determines that the foreign object is on the detected object.

Abstract: Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region. At the vicinity of both end portions of the active region in the first direction, a first region and a second region having the same conductivity type as the well region and having impurity concentration higher than that of the well region are formed in the well region. The first region and the second region are spaced from each other in a second direction perpendicular to the first direction, and at least a portion of each of them is located under the gate electrode. The first region and the second region are not formed at the center portion of the active region in the first direction.

Abstract: A micro electro-mechanical film speaker device is provided. A signal input terminal of a signal amplifier circuit is connected to an external input circuit. A second output terminal of the signal amplifier circuit is connected to a negative terminal of a micro electro-mechanical film speaker. A first terminal of a first high-pass filter is connected to a first output terminal of the signal amplifier circuit. A second terminal of the first high-pass filter is connected to a positive terminal of the micro electro-mechanical film speaker. A first terminal of a second high-pass filter is connected to a feedback terminal of the signal amplifier circuit. A second terminal of the second high-pass filter is connected to the positive terminal of the micro electro-mechanical film speaker.

Abstract: A motor driver having a startup adjusting mechanism is provided. A steady-state detector circuit detects data for driving a motor to stably rotate to output a steady-state detected signal. A startup waveform pattern circuit selects one of a plurality of startup waveform patterns to output a startup waveform pattern signal according to the steady-state detected signal. A startup waveform generator circuit outputs a startup waveform signal according to the startup waveform pattern signal. A motor controlling circuit controls a motor driving circuit to start up the motor according to the startup waveform signal.

Abstract: A display control device and a display control method capable of displaying a desired image regardless of a state of wireless communication are provided. A wireless control unit causes an external apparatus to draw a first image in accordance with input information. A first unit acquires the first image via the wireless communication and displays the first image on a display apparatus. A second unit causes a GPU to draw a second image in accordance with the unput information and displays the second image on the display apparatus. A switching unit determines whether a received radio wave is in a good state or a bad state, select the first unit when a determination result is that the received radio wave is in the good state, and select the second unit when the determination result is that the received radio wave is in the bad state.

Abstract: A control circuit receives a command from outside and causes an arithmetic unit to perform arithmetic operation M times (M is an integer of 2 or more) by using input data from outside and calculated data held in a memory, thereby making the arithmetic unit and the memory function as an IIR filter. The IIR filter is a filter capable of determining output data by arithmetic operation of K times out of the M times (K<M). The control circuit receives the command from outside and then causes the arithmetic unit to perform the arithmetic operation K times in advance, thereby determining the output data and outputting the output data to outside at that time.

Abstract: A semiconductor device includes a galvanic isolator; a transmitting circuit that transmits a transmission signal via the galvanic isolator; a receiving circuit that receives a received signal corresponding to the transmission signal via the galvanic isolator; an encoding circuit that encodes two input signals and generates the transmission signal; and a decoding circuit that decodes the two input signals from the received signals.