Abstract: A control circuit is introduced for facilitating inrush current reduction for a voltage regulator providing an output voltage variable in response to an output voltage selection. The control circuit includes a soft-start circuit, a soft-start tracking circuit, and a controller. The soft-start circuit is utilized for providing a soft-start signal. The soft-start tracking circuit includes a first input terminal for receiving a feedback signal from the voltage regulator, a second input terminal coupled to the soft-start circuit, and an output terminal coupled to the soft-start circuit. The controller, coupled to the soft-start tracking circuit, is configured to output an enabling signal to the soft-start tracking circuit selectively in accordance with the output voltage selection. The soft-start tracking circuit is operable in response to the enabling signal so that the soft-start signal provided by the soft-start circuit substantially follows the feedback signal from the voltage regulator.

Abstract: A termination voltage regulation apparatus with transient response enhancement includes a termination voltage regulator and a transient response enhancer. The termination voltage regulator provides a termination voltage at a termination voltage terminal, including first and second switching units. The transient response enhancer, coupled to the termination voltage regulator, is utilized for enhancing transient response of the termination voltage regulator, including a first enhancement circuit for sensing a first signal associated with the first switching unit and enabling a first control terminal of the first switching unit to be at a first voltage in response to the first signal in a sinking mode; and a second enhancement circuit for sensing a second signal associated with the second switching unit and enabling a second control terminal of the second switching unit to be at a second voltage in response to the second signal in a sourcing mode.

Abstract: A method facilitating a memory system operable in advance during power-up is introduced, including the following. A power-up verification circuit is provided, internally coupled to a memory control circuit of the memory system. During a period of the power-up in which a power voltage signal is ramping but not yet reaching a power voltage threshold, a power-up verification state machine of the power-up verification circuit is activated responsive to a power-on reset signal and the power voltage signal. The activated power-up verification state machine communicates with circuit units of the memory system to enable execution of corresponding detections on the circuit units in accordance with a sequence of states of the power-up verification state machine. After completion of the sequence of states, a verification completion signal is sent to enable the memory control circuit to be powered by the power voltage signal and operable to control the memory system.

Abstract: A method of controlling verification operations for error correction of a non-volatile memory device includes the following. A tolerated error bit (TEB) number for error correction of the non-volatile memory device is set to a first value to control verification operations in accordance with the TEB number. After at least one portion of the non-volatile memory device is programmed for a specific number of times, the TEB number is changed from the first value to a second value to control the verification operations in accordance with the TEB number, wherein the second value is greater than the first value and is less than or equal to the TEB threshold. The method may be performed while the at least one portion of the non-volatile memory device is programmed and verified.

Abstract: A constant on-time controller (COT) includes: a voltage dividing circuit to generate a feedback voltage according to an output voltage of a buck regulator; a current ripple extracting circuit to sense a current from an inductor of a buck regulator, and generate an extracted ripple current having no DC component according to a sensed current; a one-shot on-timer to output a constant-on time control signal according to a regulator input voltage of the buck regulator and the output voltage; a comparing circuit to output a comparison result according to a reference voltage signal, the feedback voltage and the extracted ripple current; and a logic circuit to generate a control signal to the buck regulator according to the comparison result and the constant-on time control signal. The current ripple extracting circuit detects the DC component in the present cycle, and compares the detected DC component with the next cycle.

Abstract: A memory device includes a plurality of memory blocks and each memory block includes a plurality of columns of memory cells. Each column of memory cells is coupled to a corresponding bit line. Upon completion of a power-up sequence, detect if a current leakage of corresponding columns in a group of memory blocks is greater than a predetermined level. If the current leakage of the corresponding columns in the group of memory blocks is greater than the predetermined level, perform an over-erasure correction on the corresponding columns.

Abstract: The present application proposes a memory chip includes a plurality of memory banks, a plurality of address pins, and a pseudo-address determining circuit. The plurality of address pins is arranged for receiving a plurality of address signals corresponding to the plurality of memory banks, respectively. The pseudo-address determining circuit has a plurality of input terminals coupled to the plurality of address pins, respectively, and a plurality of output terminals coupled to the plurality of memory banks. The pseudo-address determining circuit generates a pseudo-address table for the plurality of memory banks when the memory chip is powered-up. The pseudo-address table has a plurality of pseudo-addresses corresponding to the plurality of memory banks, respectively. The present application also provides a memory module that incorporates the memory chip and a method for pseudo-accessing memory banks of the memory chip.

Abstract: A synchronization circuit and a cascaded synchronization circuit for converting an asynchronous signal into at least one synchronous signal are provided. The synchronization circuit includes a signal control circuit, a flip-flop circuit, a clock enable circuit and a clock control circuit. The flip-flop circuit is coupled to the signal control circuit, the clock enable circuit is coupled to the signal control circuit and the flip-flop circuit, and the clock enable circuit is coupled to the signal control circuit and the flip-flop circuit. The signal control circuit and the clock control circuit can guarantee hold time and setup time is sufficient to allow the flip-flop circuit to output the synchronous signal without glitch regardless of the asynchronous signal.

Abstract: A class D power amplifier with novel design is provided. The amplifier includes an input stage, a periodic signal generator, a comparator, a power output stage, and a boost circuit. The input stage is coupled to a first supply voltage. The periodic signal generator generates a periodic signal and a reference signal. The power output stage is coupled to a second supply voltage. The boost circuit compares an output of the input stage with the reference signal, and thereby adjusts a value of the second supply voltage. The value of the second supply voltage is larger than a value of the first supply voltage. The reference signal is proportional to an amplitude of the periodic signal, and the amplitude of the periodic signal is determined by the value of the second supply voltage.

Abstract: A power control circuit includes an alternating current (AC) power source, a rectifier and a valley-fill circuit. The AC power source is configured to receive an AC voltage. The rectifier is configured to convert the AC voltage into a rectified voltage. The valley-fill circuit includes: an inductor, having a first terminal coupled to the rectifier, and a second terminal; a first resistor, having a first terminal coupled to the second terminal of the inductor, and a second terminal; a diode, having a cathode coupled to the second terminal of the inductor, and an anode; and a first capacitor, having a first terminal coupled to the second terminal of the first resistor and the anode of the diode, and a second terminal coupled to ground.

Abstract: An electrostatic discharge (ESD) protection device for a semiconductor device that includes a gate, a source including a silicide portion having a plurality of source contacts, and a drain including a silicide portion having a plurality of drain contacts, wherein the source and drain are extended away from the gate along a device axis. The ESD device includes a resist protective oxide (RPO) portion located on the semiconductor device in between the plurality of drain contacts and in between the plurality of source contacts, respectively.

Abstract: A pulse width modulation output stage incorporates a half bridge output stage, a gate control circuit, a detection circuit, and a control logic. The half bridge output stage has a first transistor and a second transistor connected in series between a power supply node and a ground node. The gate control circuit outputs a pulse width modulation signal to drive the first transistor and the second transistor. The detection circuit detects whether or not a glitch occurs in one of the gate voltages of the first and second transistor so as to generate a control code. The logic circuit varies the delay time of the pulse width modulation signal based on the control code.

Abstract: A target row refresh method includes: providing first table having M entries each capable of storing information of target row address; providing second table having K entries respectively capable of storing information of different/identical candidate row addresses; determining whether an input address in an input address register matches address information recorded in the first table; when not match, determining whether to update information of a target row latch by using the input address in the input address register according to a sample policy so as to determine whether to compare the input address with address information recorded in the second table to determine a target row address; and performing a target row refresh operation to refresh a memory device's row(s) adjacent to a target row corresponding to the target row address.

Abstract: The present application proposes a transient enhancing circuit for a constant-on-time converter. The constant-on-time converter includes an error amplifier and a comparator. The transient enhancing circuit includes a first sample-and-hold circuit and a zero-current detection circuit. The first sample-and-hold circuit has an input terminal and an output terminal. The input terminal of the first sample-and-hold circuit is coupled to an output terminal of the error amplifier, and the output terminal of the first sample-and-hold circuit is coupled to a first input terminal of the comparator. The zero-current detection circuit is coupled to the first sample-and-hold circuit and arranged for outputting a control signal when current flowing through a load of the constant-on-time converter is detected to be zero. The present application also proposes a constant-on-time converter using the transient enhancing circuit.

Abstract: A semiconductor memory device includes a memory bank of an open bit-line architecture and a word-line decoder. The memory bank is divided into a plurality of memory blocks in a bit-line direction, and each of the memory blocks includes a plurality of word lines, a plurality of bit lines and a plurality of memory cells which are grouped into a plurality of memory sections including two edge memory sections and at least one non-edge memory section. The word-line decoder generates a plurality of word-line enabling signals based on a plurality of address signals and activates one of the word lines for each of the two edge memory sections of one of the memory blocks and one of the word lines for one of the at least one non-edge memory section of each of the other memory blocks concurrently in an active mode according to the word-line enabling signals.

Abstract: An amplifier circuit with novel design is provided. The amplifier circuit includes an input stage, a resistor, an output stage, an intermediate stage and a gm circuit. The input stage is coupled to a first supply voltage, and is arranged to receive an input voltage and a feedback current. The resistor is coupled between the input voltage and the input stage. The output stage is coupled to a second supply voltage, and is arranged to provide an output voltage for driving a load. The intermediate stage is coupled between the input stage and the output stage, and includes a level shifter. The gm circuit is coupled to the input stage, and is arranged to compare the input voltage with a common mode voltage, and thereby generates a compensate current for the input stage.

Abstract: An E-fuse burning circuit comprising: a burning directing circuit, configured to receive first input data comprising first input address and burning directing data, to generate a burning directing signal according to the burning directing data; a ring address latch, configured to latch the first input address responding to a first clock signal, and configured to output second input address responding to the first clock signal; and a control signal generating circuit, configured to generate at least one stop signal to determine whether the data in the ring address latch is shifted or not. The ring address latch applies a first number of the stages when the burning directing signal indicates a row of the E-fuse circuit is to be burned and applies a second number of the stages when the burning directing signal indicates a column of the E-fuse circuit is to be burned.

Abstract: An E-fuse circuit comprising: a ring address latch, configured to receive a first input address arranged in serial i bits responding to a first clock signal, and to output a second input address arranged in serial j bits responding to a second clock signal; a control signal generating circuit, configured to receive the second input address, and to decode the second input address to generate first control signals with m bits and second control signals with n bits, wherein the first control signals and the second control signals are transmitted in parallel, and m, n are factors of j; and an E-fuse group, comprising j fuses. If any one of the first control signals has a first logic value and any one of the second control signals has the logic value, a corresponding fuse the E-fuse group is burned.

Abstract: A constant on-time controller has a voltage divider, a current ripple extractor, a one-shot on-timer, a comparator and a flip flop. The voltage divider generates a feedback voltage according to a regulator output voltage. The current ripple extractor senses a current in an energy storage inductor of a buck regulator flowing through flowing through an output capacitor's ESR, and generates an extracted ripple current having no DC component accordingly. The one-shot on-timer outputs a constant-on time control signal according to a buck regulator input voltage and the regulator output voltage. The modulation circuit outputs a modulation signal according to a reference voltage signal, the feedback voltage and the extracted ripple current. The flip flop generates a control signal to the buck regulator according to the modulation signal and the constant-on time control signal. An off-time of the buck regulator is determined according to the modulation signal.

Abstract: An erasing method used in a flash memory having memory blocks is illustrated, each of the memory blocks is divided into a plurality of memory sectors, and steps of the erasing method is illustrated as follows. An erasing and verifying process is performed sequentially on the memory blocks or the memory sectors of the memory block according to a memory sector enable signal. An over-erased correcting and verifying process is performed sequentially on the memory blocks or the memory sectors of the memory block according to the memory sector enable signal, wherein the memory sector enable signal is set to be asserted if an over-erased correction is performed on at least one of the memory blocks or at least one of the memory sectors of the memory block.