Abstract: A virtual bass generating circuit used in a speaker is used to filter out a high frequency part of an audio signal to generate a low passed audio signal, generates an even and odd audio signals respectively having even and odd harmonics of the low passed audio signal according to the low passed audio signal, subtracts an amplified low passed audio signal from an addition of an amplified even audio signal and an amplified odd audio signal to generate a first calculated audio signal, filters out a low frequency part and a high frequency part of the first calculated audio signal to generate a band passed audio signal, and adds the band passed audio signal and the audio signal to generate a second calculated audio signal with enhanced even and odd harmonics of the audio signal.

Abstract: A controller for a switching regulator of a LED lighting system has a current monitor, a voltage divider, an integration circuit, and a comparator circuit. The current monitor is used to sense a LED current passing through a current sensing resistor of the switching regulator, and to generate a sensing current. The voltage divider is used to receive the sensing current to generate a first through third divided voltages, wherein the first divided voltage is larger than the second divided voltage, and the second divided voltage is larger than the third divided voltage. The integration circuit is used to compare the second divided voltage with a reference voltage, and to generate an integration voltage across a RC circuit thereof accordingly. The comparator circuit is used to compare the integration voltage with the first divided voltage and the third divided voltage, and to generate a driving signal.

Abstract: An erasing method used in a flash memory comprising at least one memory block divided into a plurality of memory sectors is illustrated. Whether the memory block or the memory sector corresponding to an address has at least one under-erased transistor memory cell according to a sector enable signal is verified, wherein the sector enable signal is determined according to whether the memory block has at least one over-erased transistor memory cell. The transistor memory cells of the memory block or the memory sector will be erased according to the sector enable signal if the memory block or the memory sector corresponding to the address that has the under-erased transistor memory cell.

Abstract: A quaternary/ternary modulation selecting circuit of an amplifier includes: a signal generating circuit, a detecting circuit, and a selecting circuit. The signal generating circuit is arranged to generate a ternary signal and a quaternary signal. The detecting circuit coupled to the signal generating circuit is arranged to generate a mode selecting signal according to at least the ternary signal. The selecting circuit coupled to the signal generating circuit and the detecting circuit is arranged to select and output one of the ternary signal and the quaternary signal to an output stage of the amplifier according to the mode selecting signal.

Abstract: A non-volatile memory having discrete isolation structures and SONOS (Silicon Oxide Nitride Oxide Silicon) memory cells, a method of operating the same, and a method of manufacturing the same are introduced. Every isolation structure on a semiconductor substrate having an array region has a plurality of gaps so as to form discrete isolation structures and thereby implant source lines in the gaps of the semiconductor substrate. Since the source lines are not severed by the isolation structures, the required quantity of barrier pins not connected to the source line is greatly reduced, thereby reducing the space required for the barrier pins in the non-volatile memory.

Abstract: A low dropout voltage regulator incorporates an N-channel MOS pass transistor, a main error amplifier, a first buffer circuit, an auxiliary error amplifier, a second buffer circuit, and a decision circuit. The auxiliary error amplifier consumes less bias current. In one embodiment, the decision circuit compares the portion of the output voltage with a bias voltage to control the gate of the N-channel MOS pass transistor, wherein the value of the bias voltage is less than the value of the reference voltage.

Abstract: An oscillator includes a reference current generating circuit, a modulator circuit, and an oscillating circuit. The reference current generating circuit generates a first reference current. The modulator circuit generates a modulation current according to the first reference current and a feedback voltage, wherein the modulation current is negatively correlated with the feedback voltage. The oscillating circuit receives at least the modulation current, and generates an oscillating signal with an oscillating frequency according to at least the modulation current, wherein the oscillating frequency is varied according to the modulation current. The oscillator may be employed by a direct current (DC)-to-DC voltage converter.

Abstract: A bandgap reference circuit incorporates first, second, and third current sources, first and second amplifiers, first and second bipolar transistors, a feedback device, a first resistor, and a second resistor. The first resistor is coupled between one input of the second amplifier and the base of the first bipolar transistor. The second resistor is coupled between the base of the first bipolar transistor and the base of the second bipolar transistor. The first and second amplifies and the first to third current sources constitute negative feedback loops which force the voltages at the inputs of the amplifiers to be substantially equal.

Abstract: An apparatus with load dump protection incorporates first and second half-bridge circuits, first and second comparators, and first and second clamping circuits. The first comparator compares a supply voltage with a first set voltage and generates a first comparison signal while the supply voltage exceeds the first set voltage. The second comparator compares the supply voltage with a second set voltage and generates a second comparison signal while the supply voltage exceeds the second set voltage. The first clamping circuit divides the supply voltage and provides a divided voltage to the first half-bridge circuit in response to the second comparison signal. The second clamping circuit divides the supply voltage and provides a divided voltage to the second half-bridge circuit in response to the second comparison signal.

Abstract: A compensation circuit for compensating an input voltage offset of an error amplifier has a level shifter, a first trimming circuit, a second trimming circuit, and a compensation current sinking device. The level shifter shifts levels of a feedback voltage and a predetermined reference voltage and outputs a level shifted feedback voltage and a level shifted reference voltage. The first trimming circuit adjusts the level shifted reference voltage by trimming a first resistance thereof according to a trimming code, wherein the trimming code has the ratio relation of the input voltage offset and a resistance to be trimmed. The second trimming circuit adjusts the level shifted feedback voltage by trimming a second resistance thereof according to a trimming code. The compensation current sinking device sinks currents passing through the first and second trimming circuits.

Abstract: A memory auto repairing circuit including: a decoding circuit, a latch enable circuit and a first latch circuit, wherein the decoding circuit is arranged to compare a first input address with a plurality of fail addresses to generate a control signal; the latch enable circuit is arranged to selectively generate a first enable signal at least according to the control signal; and the first latch circuit is arranged to receive the first input address, and store the first input address when the first enable signal is received by the first latch circuit; wherein when the control signal indicates that the first input address is identical to one of the plurality of fail addresses, the enable signal is prevented from being transmitted from the latch enable circuit to the first latch circuit.

Abstract: A bootstrap circuit applied to a first transistor of a direct-current (DC) to DC converter includes a second transistor, a bootstrapping capacitor and a clamping circuit, wherein the bootstrapping capacitor has a first terminal and a second terminal, and the first terminal is coupled to a source terminal of a transistor, and the source terminal of the second transistor is coupled to the first transistor; and the clamping circuit is coupled between a gate terminal of the second transistor and the second terminal of the bootstrapping capacitor, and is arranged to maintain a voltage drop between the second terminal of the bootstrapping capacitor and the gate terminal of the second transistor. A drain terminal of the second transistor is coupled to a first reference voltage, and a maximum of a voltage level of the gate terminal of the first transistor is greater than the first reference voltage.

Abstract: Embodiments of the invention relate to a reference voltage pre-processing circuit and method for a reference voltage buffer. The embodiments include a filter to control/reduce the noise and/or interference attached to a reference voltage to be provided to a reference voltage buffer by passing the reference voltage via two transistor in series. Furthermore, the embodiments include an auxiliary voltage circuit which interfaces the filter and the reference voltage buffer to avoid that the reference voltage buffer get an invalid reference voltage.

Abstract: A clock generating circuit includes: a generating circuit, a reference circuit and an adjusting circuit. The generating circuit generates a clock signal. The reference circuit is coupled to the generating circuit, and generates a reference signal to the generating circuit according to the clock signal, wherein a frequency of the clock signal is varied according to the reference signal when the reference signal is received by the generating circuit. The adjusting circuit generates an adjusting signal and a trigger signal to the generating circuit, wherein the generating circuit refers to the trigger signal to decide whether to adjust the clock signal frequency according to the adjusting signal.

Abstract: A method for determining a resistance calibration direction in ZQ calibration of a memory device includes: repeatedly comparing a reference voltage with an target voltage by a comparator to obtain an odd plurality of comparison outputs, each of the comparison outputs being one of a high-level state and a low-level state; determining a majority of the comparison outputs for their states by a ZQ calibration controller; and determining a resistance calibration direction according to the majority by the ZQ calibration controller so that the ZQ calibration controller generates a calibration code based on the resistance calibration direction and applies the calibration code to a resistance calibration unit to adjust the target voltage via the resistance calibration unit.

Abstract: In exemplary embodiments of the present disclosure, a level shifting circuit and an integrated circuit using the level shifting circuit are provided. Compared to the conventional level shifting circuit, the level shifting circuit herein further has another pair of PMOS transistors and another pair of NMOS transistors, wherein the other pair of the PMOS transistors is connected to the pair of the PMOS transistors, and the other pair of the NMOS transistors is connected to the pair of the NMOS transistors. PMOS and NMOS transistors of the level shifting circuit are protected, the lifetime of the level shifting circuit is increased, and the damage probability of the level shifting circuit is decreased. The other pair of the PMOS transistors being turned on can be operated in the saturation region rather than in the linear region, such that the operation speed of the level shifting circuit is enhanced.

Abstract: A memory device includes an address generation circuit, an address processing circuit and a refresh control circuit. The address generation circuit generates a first intermediate address according to a row address. The first intermediate address includes a first wordline address and an identification code indicating whether a first wordline indicated by the first wordline address is a normal or redundant wordline. The address processing circuit refers to the first intermediate address to generate a second intermediate address indicating a second wordline adjacent to the first wordline. The second intermediate address includes a second wordline address and an identification code indicating whether the second wordline is a normal or redundant wordline. The refresh control circuit determines a disturbance count of the second wordline each time the first wordline is activated, and refers to the disturbance count to determine whether to output the second wordline address to refresh the second wordline.

Abstract: A variable gain amplifying circuit incorporates an operational amplifier, an input device, a feedback device, a transconductance circuit, and a dynamic biasing circuit. The operational amplifier has an output terminal providing an amplified difference output signal. The input device has a first terminal receiving a first input signal, and a second terminal coupled to a first input terminal of the operational amplifier. The feedback device is coupled between the first input terminal of the operational amplifier and the output terminal of the operational amplifier. The dynamic biasing circuit generates a bias current according to a set value. The transconductance circuit converts the difference between the first input signal and a second input signal into an analog output current flowing through the feedback device. The analog output current of the transconductance circuit is varied according to the bias current.

Abstract: A semiconductor device including: an output stage, including a PMOS, an NMOS and an output terminal, wherein a source terminal of the PMOS is connected to a first supply voltage, a drain terminal of the PMOS is connected to a drain terminal of the NMOS and the output terminal, a source terminal of the NMOS is connected to a second supply voltage, and the output terminal outputs an output signal; and a protection circuit, including a first voltage clamping circuit, including a first transistor, a second transistor and a first switch, wherein the first transistor and the second transistor are for clamping a gate voltage of the PMOS of the output stage and are connected in series, the first switch is coupled to the first supply voltage and a node between the first transistor and the second transistor for selectively coupling the first supply voltage to the node.

Abstract: A quaternary/ternary modulation selecting circuit of an audio amplifier includes a quaternary signal generating circuit, for receiving complementary analog input signals to generate complementary quaternary signals; and a ternary signal generating circuit for generating a ternary signal according to the complementary quaternary signals, wherein the ternary signal includes a positive ternary wave and a negative ternary wave; wherein when a difference in amplitude between the complementary analog input signals is within a predetermined range of zero amplitude, a signal pattern of the positive ternary wave generated from the ternary signal generating circuit is identical to a signal pattern of the negative ternary wave generated from the ternary signal generating circuit.