Abstract: A bandgap reference circuit incorporates first, second, and third current sources, an operational amplifier coupled to the second and the third current sources, a voltage divider, a first resistor, and first, second, and third bipolar transistors. The second bipolar transistor has a base configured to receive a first voltage from the voltage divider. The third bipolar transistor has a base configured to receive a second voltage from the voltage divider. The first resistor is coupled between the third current source and the third bipolar transistor.

Abstract: An input buffer includes a first driving circuit, a second driving circuit, a pull up circuit, and a pull down circuit. The first driving circuit is arranged for driving a first input signal to generate an output signal. The second driving circuit is arranged for driving the output signal. The pull up circuit is arranged for selectively controlling the second driving circuit to pull up the output signal according to the first input signal and a second input signal. The pull down circuit is arranged for selectively controlling the second driving circuit to pull down the output signal according to the first input signal and the second input signal.

Abstract: An exemplary embodiment of the present disclosure illustrates a method for auto-refreshing memory cells in a semiconductor memory device with an open bit line architecture, wherein the semiconductor memory device comprises M memory banks, and each of the M memory banks has two particular sectors with a same index and L remained sectors with different indices. Two word lines of the two particular sectors with the same index in the memory bank and (M?1) word lines of the L remained sectors respectively in the other (M?1) memory banks are selected in one cycle. Then, memory cells of the selected word lines are refreshed.

Abstract: A triangular wave generating circuit incorporates a capacitor, first, second, third, and fourth constant current sources, first and second switching units, a high/low level limiter, a clock generator, and a phase detecting unit. The first and second constant current sources charge the capacitor and the third and fourth constant current sources discharge the capacitor. The phase detecting unit compares an externally supplied clock signal with an internal clock signal and generates first and second phase signals base on a phase difference between the externally supplied clock signal and the internal clock signal. The second switching unit comprises a third switch and a fourth switch. The third switch couples the second constant current source to the capacitor in response to the first phase signal. The fourth switch couples the fourth constant current source to the capacitor in response to the second phase signal.

Abstract: A redundancy evaluation circuit has (m+1) fuse boxes and a comparator, wherein the m fuse box output a fuse status address signal and the other one fuse box outputs a comparator enable signal. Each fuse box has a common stage circuit and k redundant cells. The k redundant cells shares the precharge transistor and an inverted latch of the common stage circuit, and the fuse in the selected redundant cell affects the output of the corresponding fuse box. The comparator enabled by the comparator enable signal compares the fuse status address signal and a defective element address signal to generate a redundancy enable signal. The redundancy evaluation circuit has a small layout area.

Abstract: An exemplary embodiment of the present disclosure illustrates a memory test system comprising a memory device, a probe card, and a tester. The memory device comprises a memory die with a plurality of memory banks, a plurality of input circuits, and a plurality of output circuits, wherein each of the input circuits has a first input pin and a second pin, the first input pins of the input circuits are used to read a plurality of patches of data stored in memory cells of the memory banks, and the second input pins are used to receive a compressed result. The output circuits receive compressed signals output from the input circuits, and the probe card mixes the compressed output signals output from the output circuits to output a mixed compressed output signal to the tester.

Abstract: An input buffer includes a first driving circuit, a second driving circuit, a pull up circuit, and a pull down circuit. The first driving circuit is arranged for driving a first input signal to generate an output signal. The second driving circuit is arranged for driving the output signal. The pull up circuit is arranged for selectively controlling the second driving circuit to pull up the output signal according to the first input signal and a second input signal. The pull down circuit is arranged for selectively controlling the second driving circuit to pull down the output signal according to the first input signal and the second input signal.

Abstract: A circuit for outputting a refresh execution signal to a memory cell of a memory device in an auto-refresh mode comprises a first frequency dividing unit, a first selection circuit, a second frequency dividing unit, and a second selection circuit. The first frequency dividing unit receives an auto-refresh signal from outside the memory device and generates a plurality of first divided signals. The first selection circuit generates a selection signal selected from the auto-refresh signal and the first divided signals. The second frequency dividing unit divides the frequency of the selection signal and generates a plurality of second divided signals. The second selection circuit generates the refresh execution signal from the selection signal and the second divided signals.

Abstract: A nonvolatile semiconductor memory device comprises a memory cell array, a staircase voltage generator, and a decode and level shift circuit. The memory cell array comprises a plurality of memory cells and a plurality of bit lines coupled to the plurality of memory cells. The staircase voltage generator generates a staircase voltage having a staircase waveform that varies in at least two steps. The decode and level shift circuit selects one of said plurality of bit lines and applies the staircase voltage as a program voltage to the selected bit line.

Abstract: There is provided an integrated circuit includes an output driver and a configurable electrostatic discharging (ESD) power clamp element according to embodiments of the present invention. The output driver includes a first semiconductor element having a first conductivity type and electrically connected to a first power rail; and a second semiconductor element having a second conductivity type different from the first conductivity type and electrically connected to a second power rail. Specifically, the configurable ESD power clamp element is coupled between the first power rail and the second power rail to provide ESD protection when configured in a first hardware state, and forms a portion of the output driver when configured in a second hardware state, thereby increasing the design flexibility of the integrated circuit.

Abstract: A method for programming a plurality of memory cells of a nonvolatile semiconductor memory device comprises the steps of: dividing the plurality of memory cells into M number of groups (M is an integer); successively selecting each of the M number of groups; generating M number of successive overlapping pulse signals; and programming the memory cells of the M number of groups in response to the respective M number of successive overlapping pulse signals.

Abstract: An exemplary embodiment of the present disclosure illustrates a method for auto-refreshing memory cells in a semiconductor memory device with an open bit line architecture, wherein the semiconductor memory device comprises M memory banks, and each of the M memory banks has two particular sectors with a same index and L remained sectors with different indices. Two word lines of the two particular sectors with the same index in the memory bank and (M?1) word lines of the L remained sectors respectively in the other (M?1) memory banks are selected in one cycle. Then, memory cells of the selected word lines are refreshed.

Abstract: A method of booting a system with a non-volatile memory device includes at least the following steps: when the system is powered on, reading a status flag of at least a memory block of the non-volatile memory device, wherein the status flag indicates whether an erase operation applied to the memory block is successfully completed; selectively performing a leakage calibration process upon the memory block according to the status flag; and booting the system according to a boot code stored in the non-volatile memory device.

Abstract: A nonvolatile semiconductor memory device comprises a memory cell array, a staircase voltage generator, and a decode and level shift circuit. The memory cell array comprises a plurality of memory cells and a plurality of bit lines coupled to the plurality of memory cells. The staircase voltage generator generates a staircase voltage having a staircase waveform that varies in at least two steps. The decode and level shift circuit selects one of said plurality of bit lines and applies the staircase voltage as a program voltage to the selected bit line.

Abstract: A circuit for sensing a multi-level cell (MLC) flash memory is disclosed. The circuit comprises a plurality of first decoding units, a second decoding unit and a data latch. Each of the first decoding units provides a timing information and includes a controlled transistor to allow a current to pass therethrough, and a capacitor to be charged by the current or to discharge through the controlled transistor. The second decoding unit provides a latch signal and includes a controlled transistor to allow a current to pass therethrough, the magnitude of the current being associated with data in an MLC, and a capacitor to be charged by the current or to discharge through the controlled transistor. The data latch, in response to the timing information from each of the first decoding units and the latch signal from the second decoding unit, determines the data in the MLC.

Abstract: A semiconductor memory device having a compression test mode is provided. The semiconductor memory device comprises a memory unit, i test pads, a timing circuit, a compression circuit, and a signal distribution circuit. The memory unit comprises m memory banks divided into n activating groups, wherein each bank comprises a plurality of sensing amplifiers for sensing and amplifying data in bit lines. The timing circuit sequentially generates n control signals each for activating a plurality of sensing amplifiers in one of the n activating groups. The compression circuit compresses data sensed and amplified by the plurality of sensing amplifiers in each bank in a compression test mode. The signal distribution circuit distributes signals output from the compression circuit among the i data pads in rotation. The integer n and the integer i are adjustable.

Abstract: A charge pump circuit comprises a first booster set, a second booster group, and a detecting circuit. The first booster set receives a supply voltage and generates a first output voltage. The detecting circuit generates a detecting signal depending on the voltage level of the first output voltage. The second booster group receives the supply voltage and generates the first output voltage or a second output voltage according to the detecting signal. The second booster group is composed of a plurality of booster sets connected in parallel, wherein each booster set comprises a plurality of charge pump stages and a plurality of switch units. The number of serially-connected charge pump stages of each booster set in the second booster group is controlled by the plurality of switch units according to the stable voltage levels of the first and second output voltages.

Abstract: A circuit for sensing a multi-level cell (MLC) comprises a first switch associated with a first read bit, a second switch associated with a second read bit, a first switch control unit to control the first switch in response to a first data bit from a counter, and a second switch control unit to control the second switch in response to a second data bit from the counter.

Abstract: A method for programming a plurality of memory cells of a nonvolatile semiconductor memory device comprises the steps of: dividing the plurality of memory cells into M number of groups (M is an integer); successively selecting each of the M number of groups; generating M number of successive overlapping pulse signals; and programming the memory cells of the M number of groups in response to the respective M number of successive overlapping pulse signals.

Abstract: An oscillation control circuit for a ring oscillator includes a bandgap reference circuit and an oscillation frequency control circuit. The bandgap reference circuit is arranged for generating a bandgap reference signal by mirroring a proportional-to-absolute-temperature current. The oscillation frequency control circuit is coupled to the bandgap reference circuit, and is arranged for biasing the ring oscillator according to the bandgap reference signal. When the ring oscillator has a plurality of stages, the oscillation frequency control circuit includes one current source and a plurality of current mirrors for biasing the plurality of stages of the ring oscillator, respectively.