Abstract: An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

Abstract: A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

Abstract: A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.

Abstract: A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrates or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system to introduce the reacting species to the plasma. This gas jet system allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.

Abstract: An nickel hydroxide positive electrode active material which can be made by an ultrasonic precipitation method. The nickel hydroxide active material is characterized by the composition: ##EQU1## where x, the number of water ligands surrounding each Ni cation, is between 0.05 and 0.4 and y is the charge on the anions.

Abstract: Mechanically alloyed hydrogen storage materials having a major atomic percentage of magnesium and a minor atomic percentage of at least two elements selected from the group consisting of nickel, molybdenum, iron and titanium. Preferably the mechanical alloy comprises a multi-phase material, including at least one amorphous phase. Also, the at least two elements are preferably either nickel (from about 5 to 15 at. %) and molybdenum (from about 0.5 to 5 at. %) or iron (from about 5 to 15 at. %) and titanium (from about 5 to 15 at. %). The hydrogen storage materials are created by mechanical alloying in a milling apparatus under an inert atmosphere, such as argon, or a mixed atmosphere, such as argon and hydrogen. The speed and length of the milling are varied.

Abstract: A positive electrode for use in alkaline rechargeable electrochemical cells comprising: a material comprising a compositionally and structurally disordered multiphase nickel hydroxide host matrix which includes at least one modifier chosen from the group consisting of F, Li, Na, K, Mg, Ba, La, Se, Nd, Pr, Y, Co, Al, Cr, Mn, Fe, Cu, Zn, Sc, Sn, Sb, Te, Bi, Ru, and Pb.

Abstract: An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.

Abstract: Mechanically alloyed hydrogen storage materials having a major atomic percentage of magnesium and a minor atomic percentage of at least two elements selected from the group consisting of nickel, molybdenum, iron and titanium. Preferably the mechanical alloy comprises a multi-phase material, including at least one amorphous phase. Also, the at least two elements are preferably either nickel (from about 5 to 15 at. %) and molybdenum (from about 0.5 to 5 at. %) or iron (from about 5 to 15 at. %) and titanium (from about 5 to 15 at. %). The hydrogen storage materials are created by mechanical alloying in a milling apparatus under an inert atmosphere, such as argon, or a mixed atmosphere, such as argon and hydrogen. The speed and length of the milling are varied.

Abstract: Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify said memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.

Abstract: An nickel hydroxide positive electrode active material which can be made by an ultrasonic precipitation method. The nickel hydroxide active material is characterized by the ability to reversibly cycle between the beta and gamma nickel hydroxide crystalline phases during electrochemical charge and discharge. The material may also be characterized by a high degree of local ordering of the hydroxyl ions.

Abstract: A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

Abstract: An acute matrix liquid crystal display panel including 1) a plurality of liquid crystal display elements distributed in a matrix of rows and columns; 2) means for supplying video signals and display element selection signals, including row and column conductors; and 3) a plurality of paired Ovonic threshold switches and resistive elements each serially coupled between the corresponding row or column conductor and the liquid crystal display element, the Ovonic threshold switches acting as display element selection devices and current isolation devices in which the Ovonic threshold switches having an off state resistance of at least 1.times.10.sup.9 ohms.

Abstract: A photovoltaic module which includes at least one photovoltaic cell which is encapsulated in a non-reacted, injection molded polymeric material, thereby forming an environmental seal around the cell. The photovoltaic cell(s) are incorporated into a photovoltaic panel having front and back sides and edges forming a perimeter, and also includes means for external electrical connection to the photovoltaic cell. The non-reacted injection molded polymeric material encapsulating the panel may form useful structures, such as shingles, blocks, cases, or boxes.

Abstract: The present invention is a computational unit comprising a logic processing device, and a memory array deposited on top of and communicating with the logic processing device. More specifically, the present invention is a computational unit comprising a logic processing device, and electrically erasable phase change memory deposited on top of and communicating with the logic processing device.

Abstract: A modular metal hydride hydrogen storage system which can provide a robust and reliable source of hydrogen that can quickly and easily be modified for a variety of applications and environments. The hydrogen storage system comprises at least one storage module. Each storage module comprises a container for storing metal hydride and gaseous hydrogen, and an adapter for connecting storage modules together end-to-end to form a connected sequence of storage modules.

Abstract: An active matrix liquid crystal display panel including a plurality of Ovonic threshold switches each serially coupled between the corresponding row or column conductor and the liquid crystal display element. The Ovonic threshold switches act as display element selection devices and current isolation devices. The Ovonic switches have an off-state resistance of at least 1.times.10.sup.10 ohms.

Abstract: The present invention defines a display driver for driving a flat panel display having rows and columns. The display driver has row and column drivers comprised of logic gates where each logic gate includes chalcogenide threshold switches. The logic gates of the present invention use a chalcogenide threshold switch as a means of discharging load capacitance and resetting logic gate output.

Abstract: An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.

Abstract: A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds.