Abstract: A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A phase change optical recording medium which includes 1) a substrate having a planar surface; and 2) a plurality of discrete data recording points deposited upon the substrate. The discrete data recording points are formed from a phase change material which changes from a state of a first relative order to a state of a second relative order and visa versa upon the application of optical beam energy. Preferably the phase change material forming the plurality of discrete data recording points is deposited within individual cavities embossed into the surface of the substrate. More preferably the individual cavities are cylindrical or parabolic (bowl shaped) cavities having their central axis perpendicular to the plane of the surface of the substrate.

Abstract: A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material.

Abstract: A microwave plasma enhanced PVD/CVD apparatus and method. The apparatus includes an evacuable deposition chamber having a plasma region and a deposition region adjacent one another. The apparatus also includes a source of microwave energy, and a microwave waveguide to transfer microwave energy from the source thereof to the plasma region. Additionally, the apparatus includes a plate, crucible or boat for holding solid or liquid starting materials within said plasma region, and a system of flow controllers and gas transport tubing for introducing gaseous materials into the plasma region, the interaction of the microwave energy with the gaseous materials forms a plasma within the plasma region. The plasma provides thermal energy for the evaporation of the solid or liquid starting materials and causes the reaction of any reactive gases or vapors present in the plasma region.

Abstract: A logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein. Preferably the two-terminal chalcogenide switches are chalcogenide threshold switches. The logic can employ multi-phase clocking such as four-phase clocking.

Abstract: An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The transition metal may be selected from the group consisting of Nb, Pd, Pt and mixtures or alloys thereof. The memory material may further include at least one transition metal selected from the group consisting of Fe, Cr, Ni and mixtures or alloys thereof. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: A method of substantially aligning the superconducting grains of a multi-grained perovskite defect oxide type material, which material includes at least one superconducting phase. In the superconducting phase of such perovskite materials, the unit cells thereof include a plurality of substantially parallel metal oxide planes spacedly disposed along the c axis thereof. The aforementioned alignment of discrete grains of the multi-grained superconducting material occurs along the c axis.

Abstract: A current collection system for photovoltaic cells. The collection system includes at least one conductive wire; and a plurality of conductive fibers or filaments in contact with the conductive wire and in contact with the photovoltaic cell. The fibers or filaments collect current generated by the photovoltaic cell and conduct the current to the conductive wire, which wire in turn collects current form all of the plurality of fibers or filaments and conducts the current to the major bus bars and terminals.the major bus bars and terminals.

Abstract: A thin film, high T.sub.c fluorinated, superconducting having a lattice structure differing from the lattice structure of the material substrate, such as sapphire or stainless steel, upon which it is grown. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducting material on the substrate. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level.

Abstract: Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the single cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory element of the instant invention is in turn characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energy levels.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies.

Abstract: A method of substantially aligning the superconducting grains of a multi-grained perovskite defect oxide type material, which material includes at least one superconducting phase. In the superconducting phase of such perovskite materials, the unit cells thereof include a plurality of substantially parallel metal oxide planes spacedly disposed along the c axis thereof. The aforementioned alignment of discrete grains of the multi-grained superconducting material occurs along the c axis.

Abstract: The first fire voltage of chalcogenide-based switching devices is lowered to a value approximately equal to the threshold voltage by treatment of the chalcogenide material with fluorine either during or after deposition.