Abstract: Thin film electrical structures, such as threshold switching devices and phase change memory cells, preferably utilizing electrically stable, relatively inert, conductive electrodes including a non-single-crystal deposited film of carbon material, are disclosed. The film of carbon material, which preferably is amorphous and substantially pure, is disposed adjacent to a layer of active material such as an amorphous semiconductor, and serves to prevent undesired degradation of the active material, especially when the device is carrying appreciable current in its on-state. A method of making such structures with high quality interfaces between the semiconductor layer and the conductive carbon barrier layers adjacent thereto by successively depositing such layers in a continuously maintained partial vacuum is disclosed. The method may include a step performed in the vacuum for hermetically sealing all of, or at least the electrically switchable portion of, the active layer against subsequent contamination.

Abstract: There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprises rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

Abstract: A method producing a solid semiconductor film characterized by a low density of defect states in the energy gap thereof by the glow discharge deposition of a precursor gaseous mixture which includes a gas chosen from the group consisting essentially of hydrogen, fluorine, or combinations thereof and a compound chosen from the group consisting essentially of SiH.sub.3 F, SiH.sub.2 F.sub.2, SiHF.sub.3, SiHCl.sub.3, SiH.sub.2 Cl.sub.2, SiH.sub.3 Cl, SiCl.sub.3 F, SiCl.sub.2 F.sub.2, SiClF.sub.3, or combinations thereof.

Abstract: Disclosed is a class of multicomponent, high capacity hydrogen storage materials suitable for use in a heat pump comprising titanium, vanadium, manganese and iron. The hydrogen storage materials are disordered, multiphase, polycrystalline materials which are predominately vanadium and comprise at least a major crystalline phase substantially surrounded by an intergranular phase, with one or more inclusion phases. The materials are characterized by a Bragg x-ray diffraction pattern with a major peak occurring 43 degrees 2 theta. Also disclosed are processes for making the class of materials and a heat pump system utilizing at least one such material.

Abstract: Disclosed is a resealable vent, reinforced cover assembly for sealing a rechargeable electrochemical cell. Also disclosed herein, is a method of fabricating a reinforced cover assembly for a rechargeable electrochemical cell, a method of employing said cover assembly to seal a rechargeable electrochemical cell, and a vent, rechargeable electrochemical having a hydrogen storage alloy electrode and a resealably vented, reinforced cover assembly.

Abstract: Disclosed is a projected beam switchable data storage device having a state changeable memory material. The memory material is a multi-phase system having substantially continuous, dielectric, ceramic phase and discrete cells of a state switchable phase.

Abstract: An improved method for the continuous fabrication of metal-hydride, electrochemical, hydrogen storage alloy, negative electrodes for use in rechargeable nickel metal hydride cells. The improved method comprises the steps of providing measured amounts of powdered metal hydride electrochemical hydrogen storage alloy material and disposing said material upon a continuous wire mesh screen substrate. Thereafter, the powdered metal hydride electrochemical hydrogen storage alloy and wire mesh screen are subjected to a compaction process wherein they are rolled and pressed so as to form a single integral electrode web which is subsequently exposed to a high temperature sintering process in a chemically inert environment. The sintering process is designed to drive off excess moisture in the material while discouraging oxidation of the electrode web and set the electrode web state of charge.

Abstract: A method of making an electronic matrix array including the steps of: providing at least one layer of discrete portions of a phase changeable material having a substantially non-conductive state and a comparatively highly conductive state, said discrete portions being in one of the states; providing a first set of electrically conductive address lines on one side of said layer of discrete portions of phase changeable material and disposing said discrete portions of phase changeable material between said first and a second set of electrically conductive address lines; the second set of address lines disposed on the opposite side of said layer of discrete portions of the phase changeable material; the first and second sets of address lines crossing at an angle so as to form a plurality of cross-over points with said discrete portions; said phase changeable material operatively disposed in the areas defined by said cross-over points.

Abstract: One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Abstract: Solid-state overvoltage protection devices, preferably formed of deposited thin film, chalcogenide, threshold switching materials, typically include at least one elongated current conduction path through an elongated cross-sectional area of the threshold switching material. The cross-sectional area is formed with a length far exceeding the effective width thereof for distributing the transient current produced by overvoltage conditions over a relatively large area. In this manner, the concentration of localized heating effects can be avoided.

Abstract: A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal step.

Abstract: There is disclosed a thin film photoprogrammable memory array with a substantially increased resistance associated with each cell of the array. First and second sets of orthogonally oriented address lines are formed on a substrate with the first set of address lines crossing the second set of address lines at insulated cross-overs. A plurality of amorphous silicon diodes are deposited on the members of the first set of address lines adjacent the insulated cross over points. Settable memory material, an optically programmable chalcogenide, is deposited in electrical contact with each of the amorphous silicon diodes and in electrical contact with a member of the second set of address lines adjacent the cross-over region. When the settable memory material has been set to its high conductivity state, the electrical resistance between the amorphous silicon diode and the adjacent member of the second set of address lines is proportional to an effective electrical length measured along the settable storage member.

Abstract: A multilayered article includes at least one periodically repeating set including a layer of amorphous crystallizable material and a layer of crystallization inhibiting material in generally superposed relationship. The layer of crystallizable material has its crystallization temperature raised by the presence of the inhibiting layer. Also disclosed are methods for the fabrication of the multilayered article.

Abstract: A method for the high resolution sensing of a pattern of information so as to provide an output signal corresponding thereto includes the novel steps of optically generating an enlarged image of the pattern of information and sensing that enlarged image with a thin film photosensor array. By the use of optical enlargement, the effective resolution of the sensor array is increased. Apparatus utilizing this method may be employed in conjunction with printers or display devices to provide high resolution images of information being scanned.

Abstract: A thin film photosensor array for an electronic camera, said array adapted to provide an electrical signal corresponding to an image projected thereon. The photosensor array is preferably fabricated as a large area matrix of thin film, small area photosensitive elements capable of providing high resolution output in response to input from conventional camera optical systems. The photosensor array can be specifically tailored to provide color output or particular spectral sensitivity.

Abstract: Fully integrated thin film electronic arrays including thin film line driver circuits and address decoding circuits are disclosed. Each line driver employs a two terminal thin film threshold switching device of the type exhibiting a negative resistance characteristic for very high speed, high current operation. The line drivers are particularly useful when driving address lines or other switched conductors in arrays having large capacitive loads or current requirements. The address decoding circuits are constructed from an array of thin film diodes configured as a plurality of AND logic gates, with the output of each AND gate providing the trigger signal to turn on a line driver circuit associated with a particular address line. Thin film structures used to implement the fully integrated arrays include diodes and threshold switches arranged as high density vertical devices in the form of multilayer mesa structures.

Abstract: Apparatus for the photogeneration of electrical signals representative of a detectable condition of an image-bearing surface. The apparatus includes an array of spaced, photosensitive elements formed from semiconductor alloy material and operatively disposed on a substantially loss-free, light transmitting faceplate preferably formed from a fused array of oriented optical fibers.

Abstract: An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Abstract: A large area, high current, low voltage photovoltaic module including a common bottom electrode upon which a means adapted to collect and transport photogenerated current is disposed. By electrically interconnecting a plurality of said large area modules in series, the voltage obtained therefrom can be added so as to obtain any desired voltage output therefrom.

Abstract: There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.